A system and method for evaluating a geological formation including subjecting a source-rock sample from the geological formation to atomic force microscopy (AFM) to determine a thermal property or material property of the source-rock sample. The properties determined may include thermal conductivity or material transition temperature.

A system and method for evaluating a geological formation including subjecting a source-rock sample from the geological formation to atomic force microscopy (AFM) to determine a thermal property or material property of the source-rock sample. The properties determined may include thermal conductivity or material transition temperature.

Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

A method of operating a scanning thermal microscopy probe to model thermal contact resistance at an interface between a sample and a tip of the probe includes providing a sample to be measured; providing a scanning thermal microscopy probe including a tip; contacting the sample to be measured with the tip; and determining, with a model, a thermal conductivity (k) of the sample from a probe current (I) of the scanning thermal microscopy probe.

A method of operating a scanning thermal microscopy probe to model thermal contact resistance at an interface between a sample and a tip of the probe includes providing a sample to be measured; providing a scanning thermal microscopy probe including a tip; contacting the sample to be measured with the tip; and determining, with a model, a thermal conductivity (k) of the sample from a probe current (I) of the scanning thermal microscopy probe.

System and Methods may be provided for performing chemical spectroscopy on samples from the scale of nanometers with surface sensitivity even on very thick sample. In the method, a signal indicative of infrared absorption of the surface layer is constructed by illuminating the surface layer with a beam of infrared radiation and measuring a probe response comprising at least one of a resonance frequency shift and a phase shift of a resonance of a probe in response to infrared radiation absorbed by the surface layer.

A probe for atomic force microscopy comprises a tip for atomic force microscopy oriented in a direction referred to as the longitudinal direction and protrudes from an edge of a substrate in the longitudinal direction, wherein the tip is arranged at one end of a shuttle attached to the substrate at least via a first and via a second structure, which structures are referred to as support structures, at least the first support structure being a flexible structure, extending in a direction referred to as the transverse direction, perpendicular to the longitudinal direction and anchored to the substrate by at least one mechanical linkage in the transverse direction, the support structures being suitable for allowing the shuttle to be displaced in the longitudinal direction. An atomic force microscope comprising at least one such probe is also provided.

A device and methods for use thereof in low-temperature thermal scanning microscopy, providing non-contact, non-invasive localized temperature and thermal conductivity measurements in nanometer scale ranges with a temperature resolution in the micro-Kelvin order. A superconductive cap mounted on the tip of an elongated support probe is electrically-connected to superconductive leads for carrying electrical current through the cap. The critical superconducting current of the leads is configured to be greater than the critical current supported by the cap, and the cap's critical current is configured to be a function of its temperature. Thus, the temperature of the cap is measured by measuring its critical superconducting current. In a related embodiment, driving a current greater than the critical current of the cap quenches the cap's superconductivity, and permits the cap to dissipate resistive heat into the sample being scanned. Scanning of the sample in this mode thus images its thermal conductivity patterns.

A device and methods for use thereof in low-temperature thermal scanning microscopy, providing non-contact, non-invasive localized temperature and thermal conductivity measurements in nanometer scale ranges with a temperature resolution in the micro-Kelvin order. A superconductive cap mounted on the tip of an elongated support probe is electrically-connected to superconductive leads for carrying electrical current through the cap. The critical superconducting current of the leads is configured to be greater than the critical current supported by the cap, and the cap's critical current is configured to be a function of its temperature. Thus, the temperature of the cap is measured by measuring its critical superconducting current. In a related embodiment, driving a current greater than the critical current of the cap quenches the cap's superconductivity, and permits the cap to dissipate resistive heat into the sample being scanned. Scanning of the sample in this mode thus images its thermal conductivity patterns.