An inspection apparatus includes a stage on which a substrate is placed, a cooler, a probe card, a light irradiator and a controller. The cooler cools the substrate placed on the stage. The probe card has probes to be in contact with the substrate to supply electric power. The light irradiator irradiates light to an upper surface of the substrate, opposite to a bottom surface of the substrate placed on the stage. Further, the controller controls the light irradiator.

A wafer probe station system for reliability testing of a semiconductor wafer. The wafer probe station is capable of interfacing with interchangeable modules for testing of semiconductor wafers. The wafer probe station can be used with different interchangeable modules for wafer testing. Modules, such as probe card positioners and air-cooled rail systems, for example, can be mounted or docked to the probe station. The wafer probe station is also provided with a front loading mechanism having a rotatable arm that rotates at least partially out of the probe station chamber for wafer loading.

A leakage current sensor and a leakage current monitoring device; the leakage current center comprising an input end, an output end and an ASIC chip; the ASIC chip is electrically connected with the input end for reading analog quantity signals of the input end; the ASIC chip is further electrically connected to a digital signal processing module; the digital signal processing module can output digital quantity signals to the output end; the digital signal processing module can simultaneously feedback the output digital quantity signals to the ASIC chip, thereby forming a closed-loop feedback circuit; the input end of the leakage current sensor comprises a current sampling unit; a reference unit is arranged between the current sampling unit and the ASIC chip.

A leakage current sensor and a leakage current monitoring device; the leakage current center comprising an input end, an output end and an ASIC chip; the ASIC chip is electrically connected with the input end for reading analog quantity signals of the input end; the ASIC chip is further electrically connected to a digital signal processing module; the digital signal processing module can output digital quantity signals to the output end; the digital signal processing module can simultaneously feedback the output digital quantity signals to the ASIC chip, thereby forming a closed-loop feedback circuit; the input end of the leakage current sensor comprises a current sampling unit; a reference unit is arranged between the current sampling unit and the ASIC chip.

A method of determining a high voltage value without measuring the high voltage value directly, in varying possible temperatures. An apparatus includes two voltage divider circuits (108, 110; 109, 111), wherein the second circuit (i.e. a reference circuit 109, 111) is provided with a smaller reference input voltage (102). The transfer ratio can be obtained from the reference circuit (109, 111) through voltage measurements, and deduced into a transfer ratio of another circuit (108, 110), no matter the ambient temperature value. When measuring a divided voltage value (103) of one circuit (108, 110), the desired high voltage value (101) can be calculated, no matter what the ambient temperature is.

A device includes a first oscillator, a second oscillator and a frequency comparison block. The first oscillator includes a first LC tank circuit and is designed to generate first sustained oscillations at a first resonant frequency. The second oscillator includes a second LC tank circuit and is designed to generate second sustained oscillations at a second resonant frequency. The frequency comparison block is designed to perform a comparison of the frequencies of the second sustained oscillations and the first sustained oscillations to determine a change in inductance in one of a first inductor of the first LC tank circuit and a second inductor of the second LC tank circuit. One of the oscillators serves as a reference oscillator, and enables determination of the change in inductance to be immune to changes in environmental conditions.

A device includes a first oscillator, a second oscillator and a frequency comparison block. The first oscillator includes a first LC tank circuit and is designed to generate first sustained oscillations at a first resonant frequency. The second oscillator includes a second LC tank circuit and is designed to generate second sustained oscillations at a second resonant frequency. The frequency comparison block is designed to perform a comparison of the frequencies of the second sustained oscillations and the first sustained oscillations to determine a change in inductance in one of a first inductor of the first LC tank circuit and a second inductor of the second LC tank circuit. One of the oscillators serves as a reference oscillator, and enables determination of the change in inductance to be immune to changes in environmental conditions.

A plurality of resistors are disclosed herein. The resistor may include one or more resistive elements and a plurality of conductive portions. Openings or slots, which can be configured to adjust temperature coefficient or resistance (TCR) values of the resistor, are formed in the resistive elements. The shape, quantity, and orientation of the openings or slots can vary. In one aspect, header assemblies are provided for securing or holding pins relative to the resistors.

An apparatus for probing a device-under-test (DUT) includes a fixture disposed over the DUT, a circuitry film disposed along a contour of the fixture, a first signal connector, and a plurality of probing tips disposed on the circuitry film and extending toward the device-under-test. The circuitry film includes a first portion attached to a top sidewall of the fixture, and the first signal connector is disposed on and electrically connected to the first portion of the circuitry film. The first signal connector is electrically coupled to the probing tips through the circuitry film. A method for probing a DUT is also provided.

The present invention relates to an aging test system and an aging test method for a thermal interface material and an electronic device testing apparatus having the system, wherein a controller controls a movable carrier to move to a high temperature generating device so that the thermal interface material on the movable carrier is brought into contact with the high temperature generating device; the controller further controls a temperature sensor to detect the temperature of the thermal interface material; the controller compares an output temperature datum of the high temperature generating device with a temperature measurement datum detected by the temperature sensor. Accordingly, the thermal conductivity of the thermal interface material can be obtained for immediately determining the quality and the performance degradation of the thermal interface material, which can be used as a reference for selection or replacement of the thermal interface material.