The present disclosure provides an apparatus for measuring dynamic on-resistance of a nitride-based device under test (DUT) comprising a control terminal connected to a controller being configured to generate a control signal to switch on and off the DUT. The apparatus comprising a first clamping module, a second clamping module and a driving module. The driving module is configured to sense a state change of the DUT and generate a control signal to switch on and off the first clamping module based on the state change of the DUT such that when the DUT is at an on-state, an output voltage across the first and second output nodes is clamped to indicate a drain-source voltage of the DUT. The provided apparatus can address the overshoot issues in measurement of dynamic on-resistance of GaN device.

A current sensor includes a conductor through which current to be measured flows and which has dimensions in a length direction, a width direction, and a height direction, and first and second magnetic sensors that detect the strength of a magnetic field generated by the current. Each of the first and second magnetic sensors is positioned in an area between first and second conductor portions in the width direction and an area extending from one end to the other end in the height direction of the first and second conductor portions.

A current sensor includes a conductor through which current to be measured flows and which has dimensions in a length direction, a width direction, and a height direction, and first and second magnetic sensors that detect the strength of a magnetic field generated by the current. Each of the first and second magnetic sensors is positioned in an area between first and second conductor portions in the width direction and an area extending from one end to the other end in the height direction of the first and second conductor portions.

Real time cognitive monitoring of correlations between variables including receiving, by a circuit, a first set of data results and a second set of data results, wherein each set of data results comprises binary data points; adding a unit of charge to a collection capacitor on the circuit for each of the first set of data results that indicates a positive data point; removing a unit of charge from the collection capacitor for each of the second set of data results that indicates a positive data point; and triggering a first sense amp on the circuit if the charge on the collection capacitor exceeds a high charge threshold, indicating that the positive data points in the first set of data results is greater than the positive data points in the second set of data results to a first statistical significance.

Real time cognitive monitoring of correlations between variables including receiving, by a circuit, a first set of data results and a second set of data results, wherein each set of data results comprises binary data points; adding a unit of charge to a collection capacitor on the circuit for each of the first set of data results that indicates a positive data point; removing a unit of charge from the collection capacitor for each of the second set of data results that indicates a positive data point; and triggering a first sense amp on the circuit if the charge on the collection capacitor exceeds a high charge threshold, indicating that the positive data points in the first set of data results is greater than the positive data points in the second set of data results to a first statistical significance.

A capacitive distance sensor is provided. The distance sensor includes a sensor element having an electrically conductive, elongated, flat sensor area which in turn contains a number of holes. The sensor area is completely surrounded by an electrically non-conductive insulating body, with the result that the insulating body completely covers the edge regions of the holes. The sensor element is produced, in particular, by first of all making the holes in the sensor area. In a subsequent step, the sensor area is completely encased by the insulating body which also completely fills the holes in the sensor area.

The present disclosure provides an apparatus for measuring dynamic on-resistance of a nitride-based device under test (DUT) comprising a control terminal connected to a controller being configured to generate a control signal to switch on and off the DUT. The apparatus comprising a first clamping module, a second clamping module and a driving module. The driving module is configured to sense a state change of the DUT and generate a control signal to switch on and off the first clamping module based on the state change of the DUT such that when the DUT is at an on-state, an output voltage across the first and second output nodes is clamped to indicate a drain-source voltage of the DUT. The provided apparatus can address the overshoot issues in measurement of dynamic on-resistance of GaN device.

The present disclosure provides an apparatus for measuring dynamic on-resistance of a nitride-based device under test (DUT) comprising a control terminal connected to a controller being configured to generate a control signal to switch on and off the DUT. The apparatus comprising a first clamping module, a second clamping module and a driving module. The driving module is configured to sense a state change of the DUT and generate a control signal to switch on and off the first clamping module based on the state change of the DUT such that when the DUT is at an on-state, an output voltage across the first and second output nodes is clamped to indicate a drain-source voltage of the DUT. The provided apparatus can address the overshoot issues in measurement of dynamic on-resistance of GaN device.