Patent classifications
G01R17/10
Dual Free Layer TMR Magnetic Field Sensor
The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.
Magnetic Sensor with Serial Resistor for Asymmetric Sensing Field Range
The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
Magnetic Sensor Array with Different RA TMR Film
The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.
SYSTEMS AND METHODS FOR ACOUSTICALLY DETECTING DIELECTRIC BREAKDOWN AND PARTIAL DISCHARGE EVENTS IN ELECTRICAL DEVICES
A system for acoustically detecting dielectric breakdown of, or partial discharge within, or on, an electrical device includes at least one electroacoustic (EA) transducer configured to detect an acoustic vibration of the electrical device, and a controller electrically connected to the at least one EA transducer. The controller is configured to receive a signal from the at least one EA transducer, and analyze the signal to determine whether the signal includes data associated with an acoustic vibration in a frequency range of dielectric breakdown and/or partial discharge of the electrical device. The applicability of such a system includes, but is not limited to, electronic parts or assembly screening, life characterization testing for materials and processes, diagnostic methods or aides, augmenting testing of components, assemblies or systems, and in service monitoring to support preventative or condition based maintenance to avert an in-service issues.
Electric current sensor
An electric current sensor includes a substrate, a conductive wire, a first anisotropic magnetoresistor (AMR) unit, a second AMR unit, a third AMR unit, a fourth AMR unit, a first magnetization direction setting device, and a second magnetization direction setting device. The conductive wire has a first conductive segment and a second conductive segment respectively disposed below a first end and a second end opposite to the first end of the substrate. The first AMR unit and the second AMR unit are disposed above the first end of the substrate. The third AMR unit and the fourth AMR unit are disposed above the second end of the substrate. The first magnetization direction setting device and the second magnetization direction setting device are configured to set magnetization directions of the AMR units.
Electronic device, method for operating the same, and wireless controllable electronic assembly
An electronic device includes a substrate, a Wheatstone bridge circuit, a power module, and a controller. The Wheatstone bridge circuit includes a first pressure sensing electrode disposed on the substrate. A resistance of the first pressure sensing electrode varies with pressure applied to the first pressure sensing electrode. The first pressure sensing electrode is coil-shaped. The power module is electrically connected to the Wheatstone bridge circuit. The controller is configured to control the power module to provide direct current (DC) to the Wheatstone bridge circuit within a first period of time, and to control the power module to provide alternating current (AC) to the Wheatstone bridge circuit within a second period of time.
IMPEDANCE MEASUREMENT DEVICE
An electronic impedance measurement device: a branch, called measurement branch, including an impedance to be measured (Z.sub.m), and; at least one branch, called reference branch, including an impedance (Z.sub.r), called reference impedance; electronics, called detection electronics, configured to provide an error signal (V.sub.s) dependent on an algebraic sum of a current (I.sub.r) flowing in the at least one reference branch (104) and of a current (I.sub.m) flowing in the measurement branch; and at least one adjustment structure, changing the current (I.sub.r) in at least one of said reference branches in a manner inversely proportional to a control variable (k).
Detecting device
A detecting device includes: a bridge circuit having at least one sensing resistor whose resistance varies according to a physical quantity of a measurement object; a power supply configured to apply a voltage to the bridge circuit; an instrumentation amplifier configured to receive an output voltage of the bridge circuit from high-impedance input terminals, amplify the received output voltage, and output the amplified output voltage; and a physical quantity calculating unit configured to receive the output voltage amplified by the instrumentation amplifier and calculate the physical quantity based on the output voltage. The bridge circuit is connected to the instrumentation amplifier via a connector.
Resistance calibration
The present invention relates to resistance calibration and in particular to resistance calibration in the context of semiconductor integrated circuitry.
Current sensing
Methods and devices related to current sensing are provided. Magnetoresistive sensor elements are provided on opposite sides of a conductor.