A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), I.sub.OFF represents the off-state current, t represents time during which the transistor is off, and are constants, is a constant that satisfies 0<1, and C.sub.S is a constant that represents load capacitance of a source or a drain.

[00001]$\begin{array}{cc}{I}_{\mathrm{OFF}}\left(t\right)=C_S\frac{}{{}^{}}{t}^{-1}{e}^{-{\left(\frac{t}{}\right)}^{}}& \left(\mathrm{a2}\right)\end{array}$

In some implementations, an apparatus for testing an insulated glass unit is provided. The apparatus includes a housing and a port coupled to the housing, where the port is configured to couple with a pigtail of an insulated glass unit. The apparatus includes a battery housed within the housing, where the battery is configured to provide power to an insulated glass unit. The apparatus includes an input interface which is coupled to the housing, where the input interface is configured to receive. The apparatus includes a controller which is housed within the housing and is configured to receive the input from the input interface, send commands to an insulated glass unit, and receive data from the insulated glass unit. The apparatus also includes one or more indicators coupled with the housing, where the one or more indicators are configured to indicate a status of the insulated glass unit.

In some implementations, an apparatus for testing an insulated glass unit is provided. The apparatus includes a housing and a port coupled to the housing, where the port is configured to couple with a pigtail of an insulated glass unit. The apparatus includes a battery housed within the housing, where the battery is configured to provide power to an insulated glass unit. The apparatus includes an input interface which is coupled to the housing, where the input interface is configured to receive. The apparatus includes a controller which is housed within the housing and is configured to receive the input from the input interface, send commands to an insulated glass unit, and receive data from the insulated glass unit. The apparatus also includes one or more indicators coupled with the housing, where the one or more indicators are configured to indicate a status of the insulated glass unit.

A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), I.sub.OFF represents the off-state current, t represents time during which the transistor is off, and are constants, is a constant that satisfies 0<1, and C.sub.S is a constant that represents load capacitance of a source or a drain. $\begin{array}{cc}{I}_{\mathrm{OFF}}\left(t\right)=C_S\frac{}{{}^{}}{t}^{-1}{e}^{-{\left(\frac{t}{}\right)}^{}}& \left(a2\right)\end{array}$

The present invention discloses a method for determining the amplitude and phase of a stratified current of an overhead wire, the method comprising the following steps: S1, determining the specification, the size and main technical parameters of a wire; S2, calculating mutual inductances between conductors within a single-phase wire and the self-inductance thereof; S3, calculating mutual inductance reactance between conductors within the single-phase wire of a three-phase system and the self-inductance reactance thereof; and S4, calculating the distribution of currents in each layer. The method takes into account the magnetic field coupling effect between conductors within a wire, so as to accurately calculate the current flowing through conductors in each layer within the wire, and accurately reflect a phase relationship between conductors in each layer.

Systems and methods can provide a fast and accurate way to measure conductivity and Hall effect, such that transient conductivities, transient carrier densities or transient mobilities can be measured on millisecond time scales, for example. The systems and methods can also reduce the minimum magnetic field needed to extract carrier density or mobility of a given sample, and reduce the minimum mobility that can be measured with a given magnetic field.

Systems and methods can provide a fast and accurate way to measure conductivity and Hall effect, such that transient conductivities, transient carrier densities or transient mobilities can be measured on millisecond time scales, for example. The systems and methods can also reduce the minimum magnetic field needed to extract carrier density or mobility of a given sample, and reduce the minimum mobility that can be measured with a given magnetic field.

A plurality of magnetic field sensors (26), for example arranged in an array (30), is operative to measure changes in magnetic field strength proximate the surface(s) (18, 24) of a test structure (10). The test structure (10) may approximate the geometry of an airplane fuselage, wing, or the like. An electric current is applied to the test structure (10), and the magnetic field sensors (26) sense changes in a magnetic field caused by the current. A corresponding plurality of integrators (32) convert the sensor (26) outputs to magnetic field strength values. From the plurality of magnetic field strength values and corresponding sensor locations (27), a current density over the target surface (10) is inferred.

Optical Hall Effect (OHE) method for evaluating such as free charge carrier effective mass, concentration, mobility and free charge carrier type in a sample utilizing a permanent magnet at room temperature.

Optical Hall Effect (OHE) method for evaluating such as free charge carrier effective mass, concentration, mobility and free charge carrier type in a sample utilizing a permanent magnet at room temperature.