Methods and apparatuses for detecting tension on a tendon and/or mechanical deformation (e.g., breakage) of one or more steering tendon of a steerable and flexible articulating device. Theses apparatuses may have one or more tendons that are each electrically conductive and configured to steer the apparatus when tension is applied to the proximal end of the tendon. Tension and/or breakage (or other deformation) of one or more of these tendons may be detected by monitoring the electrical resistance of the tendons.

The subject application provides an apparatus and method for measuring dynamic on-resistance of a device under test (DUT) comprising a control terminal electrically connected to an output of a first controlling module being configured to generate a first control signal to switch on and off the DUT. The apparatus comprises a switching device and a second controlling module configured to: receive the first control signal from the first controlling module and generate a second control signal to switch on and off the switching device such that the switching device is turned on later than the DUT for a first time interval and turned off earlier than the DUT for a second time interval.

Spatially resolved Fourier Transform Impedance Spectroscopy (FTIS) is disclosed to spatially map and quickly build the frequency response of optoelectronic devices using optical probes. The transfer function of a linear system is the Fourier transform of its impulse response, which may be obtained from transient photocurrent measurements of devices such as photodetectors and solar cells. We apply FTIS to a PbS colloidal quantum dot (QD)/SiC heterojunction photodiode and corroborate results using intensity-modulated photocurrent spectroscopy. The cutoff frequencies of the QD/SiC devices were as high as ˜10 kHz, demonstrating their utility in advanced flexible and thin film electronics. The practical frequencies for FTIS lie in the mHz-kHz range, ideal for composite or novel materials such as QD films that are dominated by interfacial trap states.

Various aspects of the disclosure relate to evaluating the electromagnetic impedance characteristics of a material under test (MUT) over a range of frequencies. In particular aspects, a system includes: an electrically non-conducting container sized to hold the MUT, the electrically non-conducting container having a first opening at a first end thereof and a second opening at a second, opposite end thereof; a transmitting electrode assembly at the first end of the electrically non-conducting container, the transmitting electrode assembly having a transmitting electrode with a transmitting surface; and a receiving electrode assembly at the second end of the electrically non-conducting container, the receiving electrode assembly having a receiving electrode with a receiving surface, wherein the receiving electrode is approximately parallel with the transmitting electrode, and wherein the transmitting surface of the transmitting electrode is larger than the receiving surface of the receiving electrode.

Various aspects of the disclosure relate to evaluating the electromagnetic impedance characteristics of a material under test (MUT) over a range of frequencies. In particular aspects, a system includes: an electrically non-conducting container sized to hold the MUT, the electrically non-conducting container having a first opening at a first end thereof and a second opening at a second, opposite end thereof; a transmitting electrode assembly at the first end of the electrically non-conducting container, the transmitting electrode assembly having a transmitting electrode with a transmitting surface; and a receiving electrode assembly at the second end of the electrically non-conducting container, the receiving electrode assembly having a receiving electrode with a receiving surface, wherein the receiving electrode is approximately parallel with the transmitting electrode, and wherein the transmitting surface of the transmitting electrode is larger than the receiving surface of the receiving electrode.

A system for testing a plurality of electrical circuits includes a first remote cooperative testing device including a testing component and a first transceiver and a second remote cooperative testing device including a conductive component and a second transceiver. In response to receiving instructions from a remote computing device, the first remote cooperative testing device locates a first electrical circuit and a second electrical circuit and selectively positions the testing component to electrically couple a first portion of the first electrical circuit to a first portion of the second electrical circuit at a first node, and the second remote cooperative testing device selectively positions the conductive component to electrically couple a second portion of the first electrical circuit to a second portion of the second electrical circuit at a second node, thereby forming a testing circuit between the first node and the second node.

A system such as a vehicle may have windows with one or more conductive layers. The conductive layers may form part of an infrared-light-blocking layer or other layer. The infrared-light-blocking layer or other layer may be formed as a coating on a transparent structural window layer such as an outer or inner glass layer in a laminated window or may be embedded in a polymer layer between the outer and inner layers. Segmented terminals and elongated terminals that may extend past two or more segmented terminals may be coupled to the edges of the conductive layers. Using these terminals, control circuitry can apply localized ohmic heating currents and can make resistance measurements on the conductive layers to detect cracks.

A current sensor for a detection target current using a shunt resistor includes: a resistance value correction circuit having a correction resistor; a signal application unit that applies an alternating current signal to a series circuit of the shunt resistor and the correction resistor; a voltage detection unit that detects terminal voltages of the shunt resistor and the correction resistor; and a correction unit that calculates a resistance value of the shunt resistor and corrects the resistance value for detection; and a power supply circuit having a first power supply generation unit that generates a first power supply of the signal application unit from an input power supply of an outside; and a second power supply generation unit that generates a second power supply of the voltage detection unit.

A current sensor for a detection target current using a shunt resistor includes: a resistance value correction circuit having a correction resistor; a signal application unit that applies an alternating current signal to a series circuit of the shunt resistor and the correction resistor; a voltage detection unit that detects terminal voltages of the shunt resistor and the correction resistor; and a correction unit that calculates a resistance value of the shunt resistor and corrects the resistance value for detection; and a power supply circuit having a first power supply generation unit that generates a first power supply of the signal application unit from an input power supply of an outside; and a second power supply generation unit that generates a second power supply of the voltage detection unit.

A current sensor of a detection target current using a shunt resistor includes: a resistance value correction circuit having: a correction resistor; a signal application unit that applies an alternating current signal to a series circuit of the shunt resistor and the correction resistor; a first voltage detection unit that detects the terminal voltage of the shunt resistor; a second voltage detection unit that detects a terminal voltage of the correction resistor; and a correction unit that calculates the resistance value of the shunt resistor based on a first voltage detection value by the first voltage detection unit and a second voltage detection value by the second voltage detection unit, and corrects the resistance value for current detection based on a calculated resistance value of the shunt resistor.