A current sensor of a detection target current using a shunt resistor includes: a resistance value correction circuit having: a correction resistor; a signal application unit that applies an alternating current signal to a series circuit of the shunt resistor and the correction resistor; a first voltage detection unit that detects the terminal voltage of the shunt resistor; a second voltage detection unit that detects a terminal voltage of the correction resistor; and a correction unit that calculates the resistance value of the shunt resistor based on a first voltage detection value by the first voltage detection unit and a second voltage detection value by the second voltage detection unit, and corrects the resistance value for current detection based on a calculated resistance value of the shunt resistor.

Resistance measuring structures for a stacked integrated circuit device are provided. The resistance measuring structures may include a first Complementary Field Effect Transistor (CFET) stack, a second CFET stack, and a conductive connection. The first CFET may include a first upper transistor that includes a first upper drain region and a first lower transistor that is between the substrate and the first upper transistor and includes a first lower drain region. The second CFET may include a second upper transistor that includes a second upper drain region and a second lower transistor that is between the substrate and the second upper transistor and includes a second lower drain region. The conductive connection may electrically connect the first upper drain region and the second upper drain region.

Resistance measuring structures for a stacked integrated circuit device are provided. The resistance measuring structures may include a first Complementary Field Effect Transistor (CFET) stack, a second CFET stack, and a conductive connection. The first CFET may include a first upper transistor that includes a first upper drain region and a first lower transistor that is between the substrate and the first upper transistor and includes a first lower drain region. The second CFET may include a second upper transistor that includes a second upper drain region and a second lower transistor that is between the substrate and the second upper transistor and includes a second lower drain region. The conductive connection may electrically connect the first upper drain region and the second upper drain region.

An insulation resistance inspection system for a battery module cell pouch for inspecting an insulation resistance state of a cell pouch in the battery module configured by assembling a plurality of battery cells includes: an inspection unit bringing each of a plurality of probe modules into contact with an end surface of the cell pouch to measure an insulation resistance of the cell pouch; an interface unit connected to the inspection unit to receive a signal for the measured insulation resistance of the cell pouch; and a control unit receiving the signal for the insulation resistance of the cell pouch through the interface unit to determine whether the cell pouch is in good condition or in poor condition depending on whether the signal for the insulation resistance of the cell pouch is within a normal range that is a reference of good quality.

A ground fault detection device connected to a high-voltage battery and a positive electrode side Y capacitor includes: a detection capacitor operating as a flying capacitor, a first switch and a first resistor connecting a positive electrode side of the high-voltage battery and one end of the detection capacitor in series, and a discharge circuit including at least a discharge capacitor. The discharging circuit has one end connected to the positive electrode side of the high-voltage battery and an another end connected to the negative electrode side of the high-voltage battery. The discharge circuit further includes: a fifth switch that connects one end of the discharge capacitor and the positive electrode side Y capacitor, and a second discharge resistor and an eighth switch that connect the another end of the discharge capacitor and the ground in series.

A method of calibrating a control system based on a parametric value of a component. The method includes receiving a current from a component of the control system. The component is communicatively coupled to a controller and has a parametric resistor with a parametric resistance value correlating to a parametric value associated with the component. The method further includes determining the resistance value of the parametric resistor by measuring a parametric voltage rating from the current. The method further includes mapping the resistance value to the parametric value associated with the component. The method further includes generating a calibration data set. The calibration data set is based on calibrating the control system to calibrate for the parametric value. The method further includes transmitting a signal to the component. The signal is based on the calibration data set and is configured to calibrate operation of the component.

A method of calibrating a control system based on a parametric value of a component. The method includes receiving a current from a component of the control system. The component is communicatively coupled to a controller and has a parametric resistor with a parametric resistance value correlating to a parametric value associated with the component. The method further includes determining the resistance value of the parametric resistor by measuring a parametric voltage rating from the current. The method further includes mapping the resistance value to the parametric value associated with the component. The method further includes generating a calibration data set. The calibration data set is based on calibrating the control system to calibrate for the parametric value. The method further includes transmitting a signal to the component. The signal is based on the calibration data set and is configured to calibrate operation of the component.

A processing system includes sensor circuitry and processing circuitry. The sensor circuitry is configured to, using the sensor electrodes, obtain capacitive measurements of a sensing region, and obtain a resistance measurement of the sensing region. The processing circuitry is coupled to the sensor circuitry. The processing circuitry is configured to determine a location of an input object using the capacitive measurements of the sensing region and determine a force value based on the resistance measurement and the location of the input object. Determining the force value mitigates a temperature variation of the sensing region affecting the resistance measurement. The processing circuitry is further configured to report the force value.

A processing system includes sensor circuitry and processing circuitry. The sensor circuitry is configured to, using the sensor electrodes, obtain capacitive measurements of a sensing region, and obtain a resistance measurement of the sensing region. The processing circuitry is coupled to the sensor circuitry. The processing circuitry is configured to determine a location of an input object using the capacitive measurements of the sensing region; and determine a force value based on the resistance measurement and the location of the input object. Determining the force value mitigates a temperature variation of the sensing region affecting the resistance measurement. The processing circuitry is further configured to report the force value.

Devices and methods to perform AC impedance measurement of a device which use an excitation signal including a root mean squared current or a root mean squared voltage in a sequence of one or more frequency groups, wherein each of said frequency groups includes a summation of one or more frequencies within a frequency spread.