The present disclosure is directed to a device that provides high impedance contact pads for an electrostatic charge sensor. The contact pads are shared between the electrostatic charge sensor and drivers. The contact pads are set to a high impedance state by reducing current leakage through the drivers. Compared to electrostatic charge sensor with low impedance contact pads, the electrostatic charge sensor disclosed herein has high sensitivity, and is able to detect weak electrostatic fields.

The present disclosure is directed to a device that provides high impedance contact pads for an electrostatic charge sensor. The contact pads are shared between the electrostatic charge sensor and drivers. The contact pads are set to a high impedance state by reducing current leakage through the drivers. Compared to electrostatic charge sensor with low impedance contact pads, the electrostatic charge sensor disclosed herein has high sensitivity, and is able to detect weak electrostatic fields.

A sensor assembly includes a connecting bar extending along a longitudinal axis and a tubular body extending along the longitudinal axis and at least partially surrounding the connecting bar such that the tubular body is radially spaced from the connecting bar. The tubular body includes a support member made of insulating material. The tubular body also includes a first section with an electric field sensor comprising a first layer of electrically conductive material on an inner surface of the support member to detect an electric field produced by the connecting bar. The first section also includes a first electric screen comprising a second layer of electrically conductive material on an outer surface of the support member to shield the electric field sensor from outside electrical interference. A second section disposed adjacent the first section includes a second electric screen. A dielectric material at least partially encloses the tubular body.

A sensor assembly includes a connecting bar extending along a longitudinal axis and a tubular body extending along the longitudinal axis and at least partially surrounding the connecting bar such that the tubular body is radially spaced from the connecting bar. The tubular body includes a first skirt portion, a first plurality of cantilevered tabs extending from the first skirt portion in a first direction parallel to the longitudinal axis, a second skirt portion, and a second plurality of cantilevered tabs extending from the second skirt portion in a second direction opposite the first direction.

A sensor assembly includes a connecting bar extending along a longitudinal axis and a tubular body extending along the longitudinal axis and at least partially surrounding the connecting bar such that the tubular body is radially spaced from the connecting bar. The tubular body includes a first skirt portion, a first plurality of cantilevered tabs extending from the first skirt portion in a first direction parallel to the longitudinal axis, a second skirt portion, and a second plurality of cantilevered tabs extending from the second skirt portion in a second direction opposite the first direction.

Embodiments of the present disclosure generally include an apparatus and methods for measuring and controlling in real-time a potential formed on a substrate in a plasma processing chamber during plasma processing. Embodiments of the disclosure include a plasma processing system that includes a substrate support disposed within a processing volume of the plasma processing system, the substrate support comprising a substrate supporting surface and a dielectric layer disposed between a first electrode and the substrate supporting surface. The plasma processing system further includes a first generator coupled to a second electrode of the plasma processing system, and a sensor disposed a first distance from the substrate supporting surface. The first generator is configured to generate a plasma within the processing volume. The first electrode is disposed a second distance from the substrate supporting surface, and the first distance is less than the second distance. The sensor is generally configured to detect an electric field strength and/or a voltage formed on the substrate during plasma processing.

Embodiments of the present disclosure generally include an apparatus and methods for measuring and controlling in real-time a potential formed on a substrate in a plasma processing chamber during plasma processing. Embodiments of the disclosure include a plasma processing system that includes a substrate support disposed within a processing volume of the plasma processing system, the substrate support comprising a substrate supporting surface and a dielectric layer disposed between a first electrode and the substrate supporting surface. The plasma processing system further includes a first generator coupled to a second electrode of the plasma processing system, and a sensor disposed a first distance from the substrate supporting surface. The first generator is configured to generate a plasma within the processing volume. The first electrode is disposed a second distance from the substrate supporting surface, and the first distance is less than the second distance. The sensor is generally configured to detect an electric field strength and/or a voltage formed on the substrate during plasma processing.

Systems, methods, and devices of the various embodiments provide for the minimization of the effects of intrinsic and extrinsic leakage electrical currents enabling true measurements of electric potentials and electric fields. In an embodiment, an ephemeral electric potential and electric field sensor system may have at least one electric field sensor and a rotator coupled to the electric field sensor and be configured to rotate the electric field sensor at a quasi-static frequency. In an embodiment, ephemeral electric potential and electric field measurements may be taken by rotating at least one electric field sensor at a quasi-static frequency, receiving electrical potential measurements from the electric field sensor when the electric field sensor is rotating at the quasi-static frequency, and generating and outputting images based at least in part on the received electrical potential measurements.

Systems, methods, and devices of the various embodiments provide for the minimization of the effects of intrinsic and extrinsic leakage electrical currents enabling true measurements of electric potentials and electric fields. In an embodiment, an ephemeral electric potential and electric field sensor system may have at least one electric field sensor and a rotator coupled to the electric field sensor and be configured to rotate the electric field sensor at a quasi-static frequency. In an embodiment, ephemeral electric potential and electric field measurements may be taken by rotating at least one electric field sensor at a quasi-static frequency, receiving electrical potential measurements from the electric field sensor when the electric field sensor is rotating at the quasi-static frequency, and generating and outputting images based at least in part on the received electrical potential measurements.

The disclosure relates to a method for calculating surface electric field distribution of nanostructures. The method includes the following steps of: providing a nanostructure sample located on an insulated layer of a substrate; spraying first charged nanoparticles to the insulated surface; blowing vapor to the insulated surface and imaging the first charged nanoparticles via an optical microscope, recording the width w between the first charged nanoparticles and the nanostructure sample, and obtaining the voltage U of the nanostructure sample by an equation.