The present invention relates to a system comprising an electronic apparatus which comprises:—an electronic device comprising:—a gate electrode (G, BE);—a dielectric (D) arranged over the gate electrode (G, BE); and—a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (C.sub.g) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (C.sub.q) resulting in a total capacitance (C.sub.tot);—a voltage detector to detect an output voltage (V.sub.o) stored in the total capacitance (C.sub.tot). The system further comprises means to apply a gate voltage (V.sub.g) to the gate electrode structure (G, BE) selected to:—make the device operate around most sensitive point of fermi level of the charge sensing structure (CE); and—tune the quantum capacitance (C.sub.q). The present invention also relates to an electronic apparatus adapted to allow the tuning of its quantum capacitance.

The present invention relates to a system comprising an electronic apparatus which comprises:—an electronic device comprising:—a gate electrode (G, BE);—a dielectric (D) arranged over the gate electrode (G, BE); and—a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (C.sub.g) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (C.sub.q) resulting in a total capacitance (C.sub.tot);—a voltage detector to detect an output voltage (V.sub.o) stored in the total capacitance (C.sub.tot). The system further comprises means to apply a gate voltage (V.sub.g) to the gate electrode structure (G, BE) selected to:—make the device operate around most sensitive point of fermi level of the charge sensing structure (CE); and—tune the quantum capacitance (C.sub.q). The present invention also relates to an electronic apparatus adapted to allow the tuning of its quantum capacitance.

The disclosed technology generally relates to characterization of semiconductor structures, and more particularly to optical characterization of high-k dielectric materials. A method includes providing a semiconductor structure comprising a semiconductor and a high-k dielectric layer formed over the semiconductor, wherein the dielectric layer has electron traps formed therein. The method additionally includes at least partially transmitting an incident light having an incident energy through the high-k dielectric layer and at least partially absorbing the incident light in the semiconductor. The method additionally includes measuring a nonlinear optical spectrum resulting from the light having the energy different from the incident energy, the nonlinear optical spectrum having a first region and a second region, wherein the first region changes at a different rate in intensity compared to the second region. The method further includes determining from the nonlinear optical spectrum one or both of a first time constant from the first region and a second time constant from the second region, and determining a trap density in the high-k dielectric layer based on the one or both of the first time constant and the second time constant.

The disclosed technology generally relates to characterization of semiconductor structures, and more particularly to optical characterization of high-k dielectric materials. A method includes providing a semiconductor structure comprising a semiconductor and a high-k dielectric layer formed over the semiconductor, wherein the dielectric layer has electron traps formed therein. The method additionally includes at least partially transmitting an incident light having an incident energy through the high-k dielectric layer and at least partially absorbing the incident light in the semiconductor. The method additionally includes measuring a nonlinear optical spectrum resulting from the light having the energy different from the incident energy, the nonlinear optical spectrum having a first region and a second region, wherein the first region changes at a different rate in intensity compared to the second region. The method further includes determining from the nonlinear optical spectrum one or both of a first time constant from the first region and a second time constant from the second region, and determining a trap density in the high-k dielectric layer based on the one or both of the first time constant and the second time constant.

[Problem] The object of the present invention is to provide a static electricity distribution-visualizing material, a static electricity-visualizing film, a static electricity distribution-visualizing device, and a static electricity distribution-visualizing method, which can visualize a charged state to be seen with naked eyes so as to intuitively understand a static electricity distribution. [Solution] A static electricity distribution-visualizing material is manufactured so as to contain at least one of a fluorescent substance, a luminescent substance, an electroluminescent substance, a fractoluminescent substance, a photochromic substance, an afterglow substance, a photostimulated luminescent substance and a mechanoluminescent substance.

[Problem] The object of the present invention is to provide a static electricity distribution-visualizing material, a static electricity-visualizing film, a static electricity distribution-visualizing device, and a static electricity distribution-visualizing method, which can visualize a charged state to be seen with naked eyes so as to intuitively understand a static electricity distribution. [Solution] A static electricity distribution-visualizing material is manufactured so as to contain at least one of a fluorescent substance, a luminescent substance, an electroluminescent substance, a fractoluminescent substance, a photochromic substance, an afterglow substance, a photostimulated luminescent substance and a mechanoluminescent substance.

A device that provides high impedance contact pads for an electrostatic charge sensor. The contact pads are shared between the electrostatic charge sensor and drivers. The contact pads are set to a high impedance state by reducing current leakage through the drivers. Compared to electrostatic charge sensor with low impedance contact pads, the electrostatic charge sensor disclosed herein has high sensitivity, and is able to detect weak electrostatic fields.

A device that provides high impedance contact pads for an electrostatic charge sensor. The contact pads are shared between the electrostatic charge sensor and drivers. The contact pads are set to a high impedance state by reducing current leakage through the drivers. Compared to electrostatic charge sensor with low impedance contact pads, the electrostatic charge sensor disclosed herein has high sensitivity, and is able to detect weak electrostatic fields.

The present disclosure is directed to an electrostatic charge measurement tool and dedicated system having a probe configured to scan the surface of a target, and methods for taking the electrostatic charge measurements. In an aspect, the probe is a non-contact electrostatic probe that may be moveable across the surface of the target and be adjustable in its height from the surface of the target. In another aspect, the target is an electrostatic chuck or semiconductor wafer. In a further aspect, the electrostatic charge measurement system may perform insitu measurement of targets without removing them from their working environment.

To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.