Improved magnetic resonance imaging systems, methods and software are described including a low field strength main magnet, a gradient coil assembly, an RF coil system, and a control system configured for the acquisition and processing of magnetic resonance imaging data from a patient while utilizing a sparse sampling imaging technique.

Systems, methods and apparatuses for magnetic field sensors with self-test include a detection circuit to detect speed and direction of a target. One or more circuits to test accuracy of the detected speed and direction may be included. One or more circuits to test accuracy of an oscillator may also be included. One or more circuits to test the accuracy of an analog-to-digital converter may also be included. Additionally one or more IDDQ and/or built-in-self test (BEST) circuits may be included.

A magnetic sensor includes first to fourth resistor sections and a plurality of MR elements. Each of the plurality of MR elements belongs to any of first to fourth groups. The first to fourth groups are defined based on the areas of top surfaces of the MR elements. The first resistor section, the second resistor section, the third resistor section, and the fourth resistor section are constituted of the first group, the second group, the third group, and the fourth group, respectively; the second group, the first group, the fourth group, and the third group, respectively; the first group, the fourth group, the third group, and the second group, respectively; or the third group, the second group, the first group, and the fourth group, respectively.

According to an embodiment of the present disclosure, an integrated circuit includes: at least one sensing element configured to generate a sensed signal responsive to an electrical or magnetic phenomenon; an analog-to-digital converter configured to convert the sensed signal into a digital signal; and a digital processor configured to detect a target frequency of the electrical or magnetic phenomenon by iteratively applying a first real-valued coefficient to samples of the digital signal using real-valued arithmetic.

A magnetic field generator includes: an upper layer coil composed of a first conductive material and forming a loop circuit having a coil portion; a lower layer coil composed of a second conductive material and forming a loop circuit having a coil portion arranged opposite to the coil portion of the upper layer coil at a predetermined distance; and a substrate supporting the upper layer coil and the lower layer coil and having a dielectric material between the upper layer coil and the lower layer coil. High-frequency currents of opposite phases are passed through the upper layer coil and the lower layer coil, respectively, and a length per loop of the coil portion in the upper layer coil and the coil portion in the lower layer coil is matched to one wavelength of the high-frequency current.

An integrated semiconductor device for measuring a magnetic field, comprising: a Hall sensor, a first lateral isotropic sensor having a first stress sensitivity and a first temperature sensitivity, a second lateral isotropic sensor having a second stress sensitivity and a second temperature sensitivity, optional amplifying means, digitization means; and calculation means configured for calculating a stress and temperature compensated Hall value in the digital domain, based on a predefined formula which can be expressed as an n-th order polynomial in only two parameters. These parameters may be obtained directly from the sensor elements, or they may be calculated from a set of two simultaneous equations. A method of obtaining a Hall voltage signal, and compensating said signal for stress and temperature drift.

According to one embodiment, a magnetic sensor includes a base body, a magnetic member, and an element part. The base body includes a base body end portion. A direction from the base body toward the magnetic member is along a first direction. The element part includes a first magnetic element and a second magnetic element. A position of the first magnetic element and a position of the second magnetic element in a second direction are between a position of the base body end portion in the second direction and a position of the magnetic member in the second direction. The second direction crosses the first direction. A first distance along the second direction between the base body end portion and the element part is greater than a second distance along the second direction between the element part and the magnetic member.

According to one embodiment, a magnetic sensor includes a first magnetic element, a conductive member including a first corresponding portion, an element current circuit configured to supply an element current to the first magnetic element, and a first current circuit configured to supply a first current to the first corresponding portion. The first corresponding portion is along the first magnetic element. The first current includes an alternating current component. The first current includes a first duration of a first current value of a first polarity, a first pulse duration of a first pulse current value of the first polarity, a second duration of a second current value of a second polarity, and a second pulse duration of a second pulse current value of the second polarity. The second polarity is different from the first polarity.

A magnetic-field-sensitive MOSFET (MagFET) is described herein. In accordance with one embodiment, the MagFET comprises a semiconductor body, a first well region arranged in the semiconductor body and being doped with dopants of a first doping type, and a number of N contact regions arranged in the first well region and doped with dopants of a second doping type, which is complementary to the first doping type, wherein N is equal to or greater than three. A gate electrode covers the first well region between the contact regions. The gate electrode is separated from the first well region by an isolation layer and is configured to control a charge carrier density in the first well region between the contact regions dependent on a voltage applied at the gate electrode. The first well region has a center of symmetry and the contact regions are arranged rotationally symmetric with respect to the center of symmetry with a rotational symmetry of order N.

A magneto-optical defect center magnetometer, such as a diamond nitrogen vacancy (DNV) magnetometer, can include an excitation source, a magneto-optical defect center element, a collection device, a top plate, a bottom plate, and a printed circuit board. The excitation source, the magneto-optical defect center element, and the collection device are each mounted to the printed circuit board