A current sensor includes at least one primary circuit that is intended to conduct the current to be measured, and a secondary circuit containing at least four Neel-effect® transducers, each having a coil and a superparamagnetic core. The current sensor is designed on the basis of a printed circuit board, the primary circuit including at least two distinct metal tracks that are composed of one and the same metal and connected to one another by a via made of a rivet, of a tube or of an electrolytic deposit of the same metal.

A sensor comprises a housing; and a lead frame comprising at least three elongated leads having an exterior portion extending from the housing; and a magnetic sensor circuit disposed in the housing and connected to the lead frame. The housing comprising at least two recesses or at least two lateral protrusions arranged on two opposite sides of the housing, for allowing the sensor to be mounted to the support. A component assembly comprising said sensor mounted on a support, the support comprising a plurality of first and second posts and a plurality of electrical contacts. A method of producing said component assembly, comprising the step of arranging said sensor with its elongated leads adjacent the first posts, and arranging its lateral protrusions and/or lateral recesses adjacent the second posts, and connecting the elongated leads to the electrical contacts.

A high-temperature three-dimensional Hall sensor with a real-time working temperature monitoring function includes a buffer layer, an epitaxial layer, and a barrier layer sequentially grown on a substrate. A high-density two-dimensional electron gas is induced by polarization charges in a potential well at an interface of heterojunctions of the epitaxial layer. A lower surface of the substrate includes a vertical Hall sensor for sensing a magnetic field parallel to a surface of a device. An upper surface of the barrier layer includes a “cross” horizontal Hall sensor for sensing a magnetic field perpendicular to the surface of the device.

A light detection element includes: a plurality of magnetic elements, wherein each of the magnetic elements includes a first ferromagnetic layer that is irradiated with light and a second ferromagnetic layer and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and wherein at least two of the magnetic elements are arranged to be inside a spot of the light applied to the first ferromagnetic layers of the at least two of the magnetic elements.

A semiconductor device which comprises a substrate and a plurality of layers of semiconductor material. A primary region is provided which has a primary contact associated therewith. The device includes a secondary region which has first and second secondary contacts associated therewith. A conductive region is provided between the primary and secondary regions. An auxiliary contact is operably coupled to a current source and controls the flow of current through the semiconductor device dependent on temperature.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer; and a second non-magnetic layer, wherein, the first ferromagnetic layer and the second ferromagnetic layer are formed so that at least one of them includes a Heusler alloy layer, the first non-magnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer, the second non-magnetic layer is in contact with any surface of the Heusler alloy layer and has a discontinuous portion with respect to a lamination surface, and the second non-magnetic layer is made of a material different from that of the first non-magnetic layer and is a (001)-oriented oxide containing Mg.

A magnetic sensor 1 includes a plurality of sensitive elements 31 made of a soft magnetic material. The sensitive elements 31 have a longitudinal direction and a transverse direction and have a uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction. The sensitive elements 31 are configured to sense a magnetic field by a magnetic impedance effect. The sensitive elements 31 are arranged with a gap in between in the transverse direction. The magnetic sensor 1 includes a connecting portion 32 configured to connect longitudinal ends of transversely adjacent ones of the sensitive elements 31. The connecting portion 32 has a width in the transverse direction that narrows as the connecting portion 32 approaches the ones of the sensitive elements 31 along the longitudinal direction.

An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer. Source and drain contacts are electrically coupled to the 2DEG channel through the AlGaN layer. A gate dielectric is formed over the AlGaN layer, and gate electrodes are formed over the gate dielectric, wherein each gate electrode extends substantially entirely between the source and drain contacts, wherein the gate electrodes are separated by one or more gaps (which also extend substantially entirely between the source and drain contacts). Each of the one or more gaps defines a corresponding sensing area between the gate electrodes for receiving an external influence. A bias voltage is applied to the gate electrodes, such that regions of the 2DEG channel below the gate electrodes are completely depleted, and regions of the 2DEG channel below the one or more gaps in the direction from source to drain are partially depleted.

A magnetic property measuring apparatus measures magnetic properties of a magnetic recording medium, and includes a rotating mechanism which rotates the magnetic recording medium, a heating or cooling mechanism which heats or cools the magnetic recording medium; a temperature measuring mechanism which measures a temperature of the magnetic recording medium, a laser heating mechanism, disposed opposite to a measurement site of the magnetic recording medium, which heats the measurement site without making contact with the measurement site, a magnetic write part, disposed opposite to the measurement site, which magnetizes the measurement site without making contact with the measurement site, and a magnetic read part, disposed opposite to the measurement site, which reads a magnetic flux leakage at the measurement site without making contact with the measurement site.

The present disclosure relates to integrated circuits, and more particularly, a tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures and methods of manufacture and operation. The structure includes: a first magnetic tunneling junction (MTJ) structure on a first level; a second MTJ structure on a same wiring level as the first MTJ structure; and at least one metal line between the first MTJ structure and the second MTJ structure.