A method includes producing an amorphous precursor to a nanocomposite, the amorphous precursor comprising a material that is substantially without crystals not exceeding 20% volume fraction; performing devitrification of the amorphous precursor, wherein the devitrification comprises a process of crystallization; forming, based on the devitrification, the nanocomposite with nano-crystals that contains an induced magnetic anisotropy; tuning, based on one or more of composition, temperature, configuration, and magnitude of stress applied during annealing and modification, the magnetic anisotropy of the nanocomposite; and adjusting, based on the tuned magnetic anisotropy, a magnetic permeability of the nanocomposite.

A semiconductor device including a CMOS process-based Hall sensor is provided. The semiconductor device which may include a N-type sensing region which is formed on a semiconductor substrate; P-type contact regions and N-type contact regions which are alternately formed in the N-type sensing region; a plurality of first trenches which are formed in contact with the P-type contact regions and have a first width; and a plurality of second trenches which separate the P-type contact regions and the N-type contact regions and have a second width less than the first width.

The present disclosure relates to semiconductor structures and, more particularly, to temperature sensors with programmable magnetic tunnel junction structures and methods of manufacture. A structure includes a resistor material connected in series with a programmable magnetic tunnel junction structure in a Wheatstone bridge configuration.

A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.

A magnetoresistive sensor is provided. The magnetoresistive sensor comprises a substrate having a layer structure thereon. The layer structure comprises a lower layer, and an upper layer. The lower layer is provided on the substrate, wherein the lower layer comprises one or more graphene layers which extend across the lower layer. The upper layer is provided on the lower layer and formed of a dielectric material. The lower and upper layers of the layer structure share one or more continuous edge surfaces. The magnetoresistive sensor further comprises a first electrical contact provided adjacent to the layer structure such that the first electrical contact is in direct contact with the one or more graphene layers via one of the one or more continuous edge surfaces, a second electrical contact provided adjacent to the layer structure such that the second electrical contact is in direct contact with the one or more graphene layers via one of the one or more continuous edge surfaces, and a continuous air-resistant coating layer covering the layer structure.

An exchange coupling film in which a magnetic field (Hex) at which the magnetization direction of a pinned magnetic layer is reversed is high, in which stability under high-temperature conditions is high, and which is excellent in strong-magnetic field resistance. The exchange coupling film includes an antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer, the antiferromagnetic layer and the pinned magnetic layer being stacked together. The antiferromagnetic layer has a structure including a PtCr layer, a PtMn layer, and an IrMn layer stacked in this order. The IrMn layer is in contact with the pinned magnetic layer. The thickness of the PtMn layer is 12 Å or more, and the thickness of the IrMn layer is 6 Å. The sum of the thickness of the PtMn layer and the thickness of the IrMn layer is 20 Å or more.

A magnetic property measuring system includes a stage configured to hold a sample and a magnetic structure disposed over the stage. The stage includes a body part, a magnetic part adjacent the body part, and a plurality of holes defined in the body part. The magnetic part of the stage and the magnetic structure are configured to apply a magnetic field, which is perpendicular to one surface of the sample, to the sample. The stage is configured to move horizontally in an x-direction and a y-direction which are parallel to the one surface of the sample.

A method of making an array of vapor cells for an array of magnetometers includes providing a plurality of separate vapor cell elements, each vapor cell element including at least one vapor cell; arranging the vapor cell elements in an alignment jig to produce a selected arrangement of the vapor cells; attaching at least one alignment-maintaining film onto the vapor cell elements in the alignment jig; transferring the vapor cells elements and the at least one alignment-maintaining film from the alignment jig to a mold; injecting a bonding material into the mold and between the vapor cell elements to bond the vapor cell elements in the selected arrangement; removing the at least one alignment maintaining film from the vapor cell elements; and removing the bonded vapor cells elements in the selected arrangement from the mold to provide the array of vapor.

A magnetic sensor device includes first and second surfaces, and first and second inclined surfaces, which are inclined with respect to the first surface; first through third magnetic sensor units for detecting magnetism in first through third axial directions; and a signal processing unit that performs signal processing on the basis of first through third sensor signals output from the first through third magnetic sensor units. The first axial direction is a direction orthogonal to the first surface, and the second and third axial directions are directions orthogonal to each other on the first surface. The first and second magnetic sensor units are provided on the second inclined surface, respectively. A corrected signal generation unit included in the signal processing unit generates first and second corrected signals, which are the first and second sensor signals corrected in accordance with the inclination angles of the first and second inclined surfaces.

The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.