G01R33/0058

Reduced area magnetic field sensor topology

A magnetic field sensor includes a magnetic field sensing element to generate a magnetic field signal indicative of a sensed magnetic field, a modulator to modulate the magnetic field signal at a chopping frequency, a front end amplifier coupled to receive the magnetic field signal and generate an amplified signal, and a demodulator configured to demodulate the amplified signal at the chopping frequency. The sensor further includes a low pass filter to process the amplified signal and generate a low pass filtered signal and a Schmitt trigger circuit. The Schmitt trigger circuit includes a comparator having a first input coupled to receive the low pass filtered signal, a second input coupled to receive a reference signal, and an output at which a comparator output signal is provided. The comparator is configured to perform a plurality of comparisons within a chopping time period that is the inverse of the chopping frequency.

Power supply system

This application provides a power supply system. The power supply system includes a first device and a second device. The first device may be one of a control device and a film-and-television light, and the second device may be the other of the control device and the film-and-television light. The first device includes a first housing, a first coupler socket, a power supply circuit and a first set of contacts. The second device includes a second housing, a second coupler socket, a power receiving circuit, and a second set of contacts. In the power supply system. The power supply circuit in the first device and the power receiving circuit in the second device can be electrically connected through the first set of contacts in stalled on the first coupler socket and the second set of contacts installed on the second coupler socket.

Methods for crossed-fins FinFET device for sensing and measuring magnetic fields
09964605 · 2018-05-08 · ·

Methods for forming an efficient and effective crossed-fins FinFET device for sensing and measuring magnetic fields and resulting devices are disclosed. Embodiments include forming first-fins, parallel to and spaced from each other, in a first direction on a substrate; forming second-fins, parallel to and spaced from each other on the substrate, in a same plane as the first fins and in a second direction perpendicular to and crossing the first-fins; forming a dummy gate with a spacer on each side over channel areas of the first and second fins; forming source/drain (S/D) regions at opposite ends of each first and second fin; forming an ILD over the fins and the dummy gate and planarizing to reveal the dummy gate; removing the dummy gate, forming a cavity; and forming a high-k/metal gate in the cavity.

Magnetic-field and magnetic-field gradient sensors based on lateral SOI bipolar transistors

A lateral bipolar junction transistor (BJT) magnetic field sensor that includes a layout of two or more adjacent lateral BJT devices. Each BJT includes a semiconductor base region of a first conductivity type doping, a semiconductor emitter region of a second conductivity type doping and laterally contacting the base region; and a first semiconductor collector region of a second conductivity type doping contacting said base region on an opposite side thereof. A second collector region of the second conductivity type doping is also formed contacting the base region on the opposite side thereof in spaced apart relation with the first collector region. The first adjacent lateral BJT device includes the emitter, base and first collector region and the second adjacent lateral BJT device includes the emitter, base and second collector region. The sensor induces a detectable difference in collector current amounts in the presence of an external magnetic field transverse to a plane defined by the layout.

Vibronic measuring system for measuring a mass flow rate of a fluid measurement medium

The measuring system comprises a vibration-type measuring sensor, a sensor housing, a magnetic-field detector, and measuring-system electronics electrically coupled both to an oscillation exciter and to oscillation-sensing devices of the measuring sensor. The measuring sensor is inside the sensor housing and the magnetic-field detector is outside the sensor housing. The magnetic-field detector is designed to convert changes in the magnetic field into a magnetic-field signal having an amplitude dependent on a magnetic flux through the magnetic-field detector and/or on an area density of said magnetic flux. The measuring-system electronics are designed to determine, on the basis of oscillation measurement signals of the measuring sensor, the mass-flow-rate measurement values representing the mass flow rate and to at least qualitatively determine, on the basis of the magnetic-field signal, whether an external magnetic field is established inside the measuring sensor.

WATCH MAGNETIC DETECTOR

A dial (2a, 2b) of a watch (1) including a standalone device for determining a magnetic event (3), such a dial (2a, 2b) includes a visible face (20a) and a hidden face (20b), said dial (2a, 2b) being formed by a stack (9a, 9b) of thin layers (10, 11, 12, 13, 14) of material extending between these two faces (20a, 20b), each of said layers (10, 11, 12, 13, 14) having one or more of the functional elements included in said device (3) including: at least one magnetic sensor (23), a magnetic event reporting module (4), a standalone electric power supply unit (21), and a 10 control unit (7) for managing the operation of said reporting module (4) and said at least one magnetic sensor (23).

BROADBAND SWITCH FOR 3T AND 7T MAGNETIC RESONANCE IMAGING

A hybrid microstripline transmit/receive switch and methods for use in magnetic resonance imaging of X-atomic nuclei at 3T and 7T magnetic field strengths. A first and second dielectric substrate each include a broadband hybrid magnetic coupler formed on the top side and a ground plane formed on the bottom side. An RF electrical signal is input to a first port and a second port transmits the signal when a first pin diode and a second pin diode are forward biased. A third port is isolated and a fourth port receives signals when the first and second pin diodes are reversed biased. Tuning capacitors are connected to the ports. The T/R switch is configured to operate in broadband frequency ranges of about 25 MHz to about 55 MH, of about 61 MHz to about 128 MHz, and of about 250 MHz to about 317 MHz.

DIRECTED ACTIVATION REED SENSOR

A reed sensor including a dielectric substrate, a reed switch mounted to a first side of the dielectric substrate, and a ferromagnetic shield disposed on the first side of the dielectric substrate, wherein the ferromagnetic shield covers the reed switch.

Systems and methods for sensing deformation of a magnetic material and fabrication methods thereof

A soft magnetic sensor comprising a soft material containing randomly distributed magnetic microparticles and a magnetometer that can estimate force and localize contact over a continuous area. A reference magnetometer can be used to filter motion and ambient noise. Methods for locating contact and determining force comprise data analysis of the magnetometer output. In some embodiments, the sensor can localize an object prior to contact.

Broadband switch for 3T and 7T magnetic resonance imaging

A hybrid microstripline transmit/receive switch and methods for use in magnetic resonance imaging of X-atomic nuclei at 3T and 7T magnetic field strengths. A first and second dielectric substrate each include a broadband hybrid magnetic coupler formed on the top side and a ground plane formed on the bottom side. An RF electrical signal is input to a first port and a second port transmits the signal when a first pin diode and a second pin diode are forward biased. A third port is isolated and a fourth port receives signals when the first and second pin diodes are reversed biased. Tuning capacitors are connected to the ports. The T/R switch is configured to operate in broadband frequency ranges of about 25 MHz to about 55 MH, of about 61 MHz to about 128 MHz, and of about 250 MHz to about 317 MHz.