An exchange-coupling film having a large magnetic field (Hex) at which the magnetization direction of a pinned magnetic layer is reversed, thus exhibiting high stability under high-temperature conditions, and having excellent high-magnetic-field resistance includes an antiferromagnetic layer and a pinned magnetic layer in contact with the antiferromagnetic layer. The antiferromagnetic layer has an alternating multilayer structure of three or more layers, the layers including alternately stacked X.sup.1Cr and X.sup.2Mn layers, where X.sup.1 represents one or more elements selected from the group consisting of platinum group elements and Ni, and X.sup.2 represents one or more elements selected from the group consisting of platinum group elements and Ni and may be the same as or different from X.sup.1.

A sensor for measuring a rotation speed of a magnetic encoder includes a first magnetic detector detecting a magnetic field induced from the magnetic encoder and outputting a strength value of the magnetic field as a first electrical signal, a second magnetic detector detecting the magnetic field induced from the magnetic encoder and outputting a strength value of the magnetic field as a second electrical signal, a first output signal generator for generating and outputting first rotation data including information indicating a rotation speed of a wheel based on the first electrical signal, and a second output signal generator configured to generate second rotation data including information indicating a rotation speed of the wheel based on the second electrical signal. The information indicating the rotation speed in the second rotation data may have a higher resolution than the information indicating the rotation speed in the first rotation data.

An exemplary magnetic field measurement system includes a wearable sensor unit that includes a magnetometer and a twisted pair cable interface assembly electrically connected to the magnetometer.

A magnetoencephalograph M1 includes: multiple optically pumped magnetometers 1A that measure a brain's magnetic field; multiple magnetic sensors for geomagnetic field cancellation 2 that measure a magnetic field; multiple magnetic sensors for active shield 3 that measure a fluctuating magnetic field; a geomagnetic field nulling coil; an active shield coil 9; a control device 5 that determines a current to generate a magnetic field for canceling the magnetic field based on measured values of the multiple magnetic sensors for geomagnetic field cancellation 2, determines a current to generate a magnetic field for canceling the fluctuating magnetic field based on measured values of the multiple magnetic sensors for active shield 3, and outputs a control signal corresponding to each of the determined currents; and a coil power supply 6 that outputs a current to each coil in response to the control signal.

An exchange-coupled film includes a antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer stacked together, the antiferromagnetic layer having a structure including an IrMn layer, a first PtMn layer, a PtCr layer, and a second PtMn layer stacked in that order, the IrMn layer being in contact with the pinned magnetic layer. The second PtMn layer preferably has a thickness of more than 0 Å and less than 60 Å, in some cases. The PtCr layer preferably has a thickness of 100 Å or more, in some cases. The antiferromagnetic layer preferably has a total thickness of 200 Å or less, in some cases.

A sensor mounted wafer includes a lower case, a circuit board, a metal layer, an upper case and lower case. A mounting groove is formed on a surface of the lower case. An electronic component is mounted on the circuit board, and placed in the mounting groove. The upper case having an insertion groove on a surface of the upper case, wherein the electronic component is inserted into the insertion groove, and the upper case is bonded together to the lower case. The metal layer placed on at least one surface of the lower case and the upper case.

A semiconductor device includes a semiconductor substrate having a surface perpendicular to the first direction; a vertical Hall element formed in the semiconductor substrate, and including a magnetosensitive portion having a depth in the first direction, a width in the second direction, and a length in the third direction; and an excitation wiring extending in the third direction and disposed above the semiconductor substrate and at a position that overlaps the center position of the width of the magnetosensitive portion, and the value u derived from Expression (1) is 0.6 or more: $\begin{array}{c}u=\frac{{\tan }^{-1}\left(\frac{W+\mathrm{Wc}}{2h}\right)-{\tan }^{-1}\left(\frac{W-\mathrm{Wc}}{2h}\right)}{2{\tan }^{-1}(\frac{\mathrm{Wc}}{2h}}\end{array}$

The present disclosure discloses a magnetic isolator, including a substrate, a magnetic field generating unit, a magnetic field sensing unit, a shielding layer, and an isolation dielectric, where the magnetic field generating unit includes a current conductor, the current conductor is arranged to extend along a first direction on one side of the substrate, the magnetic field sensing unit and the current conductor are arranged on the same side of the substrate, the magnetic field sensing unit is located on a lateral side of the current conductor, and a distance between the current conductor and the magnetic field sensing unit is greater than 0 along a second direction, where the first direction is perpendicular to the second direction; an isolation dielectric is arranged between the current conductor and the magnetic field sensing unit; and an isolation dielectric is arranged within the distance between the current conductor and the magnetic field sensing unit along the second direction, thereby playing a role in electrical isolation, facilitating improving the isolation strength, and simplifying the process. The shielding layer can absorb external interfering magnetic fields, and further improve the signal-to-noise ratio.

Provided is a long-wave infrared detecting element including a magnetic field generator configured to generate a magnetic field, a substrate provided on the magnetic field generator, a magnetic-electric converter that is spaced apart from the substrate and configured to generate an electrical signal based on the magnetic field generated by the magnetic field generator, and an support unit that is provided on the substrate and supports the magnetic-electric converter in a state in which the magnetic-electric converter is spaced apart from the substrate, the support unit being configured to generate heat by absorbing incident infrared radiation, wherein the electrical signal changes corresponding to temperature changes of the magnetic-electric converter based on the incident infrared radiation directly absorbed in the magnetic-electric converter and temperature changes of the magnetic-electric converter based on the incident infrared radiation absorbed in the support unit.

A device for measuring magnetism of a permanent magnet material at a high temperature includes a laser device, a power controller, a light beam controller, a temperature controller, a magnetism measurement unit, temperature sensors, and electromagnet pole heads. The electromagnet pole heads are divided into an upper piece and a lower piece for clamping upper and lower surfaces of a sample. Heat absorbing sheets are respectively fixed on front and rear surfaces of the sample. Temperatures of the heat absorbing sheets are measured by the temperature sensors. The sample is heated by laser, and the temperature controller is used to adjust a ratio of light beams of the power controller and the light beam controller irradiating the heat absorbing sheets on the front and rear surfaces of the sample, thus adjusting the temperatures of the heat absorbing sheets. The magnetism of the sample is measured using the magnetism measurement unit.