G01R33/0094

SYSTEMS AND METHODS FOR SENSING ANALYTES IN GMR-BASED DETECTION OF BIOMARKERS

Methods of, inter alia, detecting the presence of one or more analytes in one or more query samples include providing one or more sensor that each include biomolecules disposed on a functionalized surface of one or more giant magnetoresistance (GMR) sensors. Modes of operation remove or add magnetic beads from the vicinity of sensor surfaces by interactions with the biomolecules. The methods feature, inter alia, detecting the presence of one or more analytes in one or more query samples by measuring magnetoresistance change of the one or more GMR sensors based on determining magnetoresistance before and after passing magnetic particles over the one or more sensors.

Object tracking using magnetic field sensing and backscatter transmissions
11481034 · 2022-10-25 · ·

A low-power object tracking system is disclosed that includes an object tracking device that senses one or more magnetic field(s) to determine a position of the object tracking device. The object tracking device includes a magnetic field sensor including one or more receiving coils and position tracking circuitry in communication with the magnetic field sensor. The position tracking circuitry is configured to determine at least one field strength associated with at least one stationary magnetic field sensed at the one or more receiving coils, and to determine position information associated with the housing based at least in part on the at least one field strength. The object tracking device includes a communication interface configured to transmit the position information to at least one remote computing device.

Magnetic field measurement systems and methods employing feedback loops with a loops with a low pass filter

A magnetic field measurement system includes at least one magnetometer having a vapor cell, a light source to direct light through the vapor cell, and a detector to receive light directed through the vapor cell; at least one magnetic field generator disposed adjacent the vapor cell; and a feedback circuit coupled to the at least one magnetic field generator and the detector of the at least one magnetometer. The feedback circuit includes a first feedback loop that includes a first low pass filter with a first cutoff frequency and a second feedback loop that includes a second low pass filter with a second cutoff frequency. The first and second feedback loops are configured to compensate for magnetic field variations having a frequency lower than the first or second cutoff frequency, respectively.

Integrated rotation angle determining sensor unit in a measuring system for determining a rotation angle

An integrated rotation angle determining sensor unit in a measuring system for determining a rotation angle, comprising a shaft, rotatable around a rotation axis, having a transducer, a first semiconductor layer designed as a die being provided, which has an upper side arranged perpendicularly to the rotation axis and an underside and a first Hall sensor system monolithically formed in the first semiconductor layer, and a second semiconductor layer designed as a die being provided, which has an upper side arranged perpendicularly to the rotation axis and an underside and a second Hall sensor system monolithically formed in the second semiconductor layer, each Hall sensor system including at least one first Hall sensor and a second Hall sensor and a third Hall sensor.

MULTI-SENSOR POSITION MEASUREMENT SYSTEM

The invention discloses a multi-sensor position measurement system mainly comprising a base, a carrier and a modular component, the carrier is provided with a first signal array and a second signal array. The modular component is disposed on the base, and comprises two Hall sensors for sensing magnetic field changes of the first signal array, two magnetoresistive sensors for sensing magnetic field changes of the second signal array, and a first state sensor having a marking unit disposed on the carrier and a sensitive element disposed on the base for sensing signals generated by the marking unit for subsequent reference signal generation, connection of measurement results between other sensors, and identification of homing direction.

ELECTROMAGNETIC FIELD SENSOR
20230127382 · 2023-04-27 · ·

An electromagnetic field sensor includes a conductor plate, a signal output terminal to output a potential difference between the conductor plate and the signal output terminal, and a linear conductor including a first end electrically connected to a plate face of the conductor plate and a second end opposite to the first end and provided with a signal output terminal. The electromagnetic field sensor includes a loop plane that is formed by the conductor plate and the linear conductor and orthogonal to a plate face of the conductor plate when viewed from the side.

Exchange coupling film, magnetoresistance effect element film using the exchange coupling film, and magnetic detector using the exchange coupling film

An exchange coupling film in which a magnetic field (Hex) at which the magnetization direction of a pinned magnetic layer is reversed is high, in which stability under high-temperature conditions is high, and which is excellent in strong-magnetic field resistance. The exchange coupling film includes an antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer, the antiferromagnetic layer and the pinned magnetic layer being stacked together. The antiferromagnetic layer has a structure including a PtCr layer, a PtMn layer, and an IrMn layer stacked in this order. The IrMn layer is in contact with the pinned magnetic layer. The thickness of the PtMn layer is 12 Å or more, and the thickness of the IrMn layer is 6 Å. The sum of the thickness of the PtMn layer and the thickness of the IrMn layer is 20 Å or more.

Tunnel magnetoresistance effect device and magnetic device using same
11476413 · 2022-10-18 · ·

A tunnel magnetoresistance effect (TMR) device includes an exchange coupling film having a first ferromagnetic layer, which is at least a portion of a fixed magnetic layer, and an antiferromagnetic layer laminated on the first ferromagnetic layer. The ferromagnetic layer includes an X(Cr—Mn) layer containing one or two or more elements X selected from the group consisting of the platinum group elements and Ni, and also containing Mn and Cr. The X(Cr—Mn) layer has a first region relatively near the first ferromagnetic layer, and a second region relatively far away from the first ferromagnetic layer, and the content of Mn in the first region is higher than that in the second region.

Methods and systems for homogenous optically-pumped vapor cell array assembly from discrete vapor cells

A method of making an array of vapor cells for an array of magnetometers includes providing a plurality of separate vapor cell elements, each vapor cell element including at least one vapor cell; arranging the vapor cell elements in an alignment jig to produce a selected arrangement of the vapor cells; attaching at least one alignment-maintaining film onto the vapor cell elements in the alignment jig; transferring the vapor cells elements and the at least one alignment-maintaining film from the alignment jig to a mold; injecting a bonding material into the mold and between the vapor cell elements to bond the vapor cell elements in the selected arrangement; removing the at least one alignment maintaining film from the vapor cell elements; and removing the bonded vapor cells elements in the selected arrangement from the mold to provide the array of vapor.

Magnetic sensor array with different RA TMR film

The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.