Detection of nuclear reactions are accomplished through use of a solid-state detector that uses a hexagonal boron nitride configuration. Metallized areas for the hexagonal boron nitride have a metallized top and bottom area that is pixelated.

Detection of nuclear reactions are accomplished through use of a solid-state detector that uses a hexagonal boron nitride configuration. Metallized areas for the hexagonal boron nitride have a metallized top and bottom area that is pixelated.

A non-destructive inspection system 1 includes a neutron detecting unit 4 and an arithmetic unit 60. The neutron detecting unit 4 includes a collimator 30 and a neutron detector 20 integrated together. The collimator 30 has a wall defining a through passage P. The wall is made from a material that absorbs neutrons produced via an inspection object. The neutron detector 20 is capable of detecting neutrons that have passed through the collimator 30. The arithmetic unit 60 generates information on a position and composition of the inspection object, based on information on the neutrons detected by the neutron detector 20, positional information indicating the position of the neutron detecting unit 4, and posture information indicating the posture of the neutron detecting unit 4. The positional information and the posture information are detected by a position and posture detecting unit 5.

The present application relates to a detection structure for fast neutrons and a method for acquiring a neutron energy spectrum, the detection structure for fast neutrons comprises seven semiconductor detection units and a conversion layer made of a hydrogen-containing material, the seven semiconductor detection units comprise a first, a second, a third, a fourth, a fifth, a sixth and a seventh semiconductor detection unit arranged sequentially, the first, the fourth and the seventh semiconductor detection unit constitute an anticoincidence detection group, the second and the third semiconductor detection unit constitute a neutral particle background detection group, the fifth and the sixth semiconductor detection unit constitute a recoil proton detection group, the conversion layer is disposed between the fourth and the fifth semiconductor detection unit, incident neutrons collision with hydrogen atomic nuclei and generate the recoil protons. The present application can effectively reduce influence of background signals on the measurement and improve accuracy of the inversed neutron energy spectrum.

The present disclosure provides a neutron imaging detector and a method for detecting neutrons. In one example, a method includes providing a neutron imaging detector including plurality of memory cells and a conversion layer on the memory cells, setting one or more of the memory cells to a first charge state, positioning the neutron imaging detector in a neutron environment for a predetermined time period, and reading a state change at one of the memory cells, and measuring a charge state change at one of the plurality of memory cells from the first charge state to a second charge state less than the first charge state, where the charge state change indicates detection of neutrons at said one of the memory cells.

The present disclosure provides a neutron imaging detector and a method for detecting neutrons. In one example, a method includes providing a neutron imaging detector including plurality of memory cells and a conversion layer on the memory cells, setting one or more of the memory cells to a first charge state, positioning the neutron imaging detector in a neutron environment for a predetermined time period, and reading a state change at one of the memory cells, and measuring a charge state change at one of the plurality of memory cells from the first charge state to a second charge state less than the first charge state, where the charge state change indicates detection of neutrons at said one of the memory cells.

A single volume fission energy neutron detector is described herein. The detector includes a single volume of scintillator. A photodetector is positioned adjacent to a surface of the scintillator, wherein the photodetector has relatively small spatial resolution corresponding thereto and relatively small temporal resolution corresponding thereto. Based upon values read out from detection bins of the photodetector, kinematics of a neutron that interacted with scintillating material of the scintillator are reconstructed. Based upon the kinematics (of the neutron and other detected neutrons), a location of material from which the neutron was emitted is ascertained, and an image of the material is generated.

A single volume fission energy neutron detector is described herein. The detector includes a single volume of scintillator. A photodetector is positioned adjacent to a surface of the scintillator, wherein the photodetector has relatively small spatial resolution corresponding thereto and relatively small temporal resolution corresponding thereto. Based upon values read out from detection bins of the photodetector, kinematics of a neutron that interacted with scintillating material of the scintillator are reconstructed. Based upon the kinematics (of the neutron and other detected neutrons), a location of material from which the neutron was emitted is ascertained, and an image of the material is generated.

A wide band gap semiconductor NAND based neutron detection system includes a semiconductor layer comprising a wide band gap material with a neutron absorber material in the wide band gap material, and the semiconductor layer is the only layer of the wide band gap semiconductor NAND based neutron detection system fabricated with the neutron absorber material.

A wide band gap semiconductor NAND based neutron detection system includes a semiconductor layer comprising a wide band gap material with a neutron absorber material in the wide band gap material, and the semiconductor layer is the only layer of the wide band gap semiconductor NAND based neutron detection system fabricated with the neutron absorber material.