A radiation detector comprising a transistor, e.g. a FET, formed of one or more organic semiconductor materials having a neutron sensitizer element dispersed therein. The sensitizer element is one or more elements selected from the group consisting of boron, cadmium, lithium and gadolinium. The semiconductor device comprises a diode, a transistor (e.g. a Field Effect Transistor) or a non-rectifying, symmetric, semiconductor device. The organic semiconductor materials comprise a donor organic semiconductor material and an acceptor organic semiconductor material or a combination of organic and inorganic donor- acceptor materials.

A radiation detector comprising a transistor, e.g. a FET, formed of one or more organic semiconductor materials having a neutron sensitizer element dispersed therein. The sensitizer element is one or more elements selected from the group consisting of boron, cadmium, lithium and gadolinium. The semiconductor device comprises a diode, a transistor (e.g. a Field Effect Transistor) or a non-rectifying, symmetric, semiconductor device. The organic semiconductor materials comprise a donor organic semiconductor material and an acceptor organic semiconductor material or a combination of organic and inorganic donor- acceptor materials.

Fast neutron detectors using nuclear reactions within semiconductor sheet material. Some versions used doped versions of the material. Some versions use dopants selected from Ba, As, Br, C, Ce, Cl, Co, Cu, F, Ga, Ge, In, Cd, Te, Al, P, K, La, Mo, Nd, O, Os, Pr, S, Se, Si, Sn, Sr, Ti, Tl, V, Zn, and Zr. Some versions have filters or coatings deposited on windows into the detector. Coatings are selected from titanium oxide, zinc oxide, tin oxide, copper indium gadolinium selenide, cadmium telluride, cadmium tin oxide, perovskite photovoltaic, Si, GaAs, AlP, Ge.

Fast neutron detectors using nuclear reactions within semiconductor sheet material. Some versions used doped versions of the material. Some versions use dopants selected from Ba, As, Br, C, Ce, Cl, Co, Cu, F, Ga, Ge, In, Cd, Te, Al, P, K, La, Mo, Nd, O, Os, Pr, S, Se, Si, Sn, Sr, Ti, Tl, V, Zn, and Zr. Some versions have filters or coatings deposited on windows into the detector. Coatings are selected from titanium oxide, zinc oxide, tin oxide, copper indium gadolinium selenide, cadmium telluride, cadmium tin oxide, perovskite photovoltaic, Si, GaAs, AlP, Ge.

The present disclosure provides a neutral atom imaging unit, a neutral atom imager, a neutral atom imaging method, and a space detection system. The neutral atom imaging unit includes at least one set of detection units, the at least one set of detection units includes: at least one semiconductor detector line array, each semiconductor detector line array includes a semiconductor detector strip composed of a plurality of semiconductor detectors; and at least one modulation grid. The modulation grid includes a slit and a slat forming the slit; the modulation grid includes a plurality of grid periods, each of the grid periods includes n slits, the width of the semiconductor detector strip is d, and the width (w.sub.i) of the i-th slit of the modulation grid satisfies the following relationship:

[00001]$w_i=\frac{n}{i}\times d.$

The present disclosure provides a neutral atom imaging unit, a neutral atom imager, a neutral atom imaging method, and a space detection system. The neutral atom imaging unit includes at least one set of detection units, the at least one set of detection units includes: at least one semiconductor detector line array, each semiconductor detector line array includes a semiconductor detector strip composed of a plurality of semiconductor detectors; and at least one modulation grid. The modulation grid includes a slit and a slat forming the slit; the modulation grid includes a plurality of grid periods, each of the grid periods includes n slits, the width of the semiconductor detector strip is d, and the width (w.sub.i) of the i-th slit of the modulation grid satisfies the following relationship:

[00001]$w_i=\frac{n}{i}\times d.$

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

A MEMS nanotube based radiation sensor that is low cost, low power, compact, reliable and is applicable across many fields and a method for fabricating such a sensor are described. Each sensor may be connected to an array of similar but distinct sensors that leverage different materials and nanotube technology to detect radiation.

A MEMS nanotube based radiation sensor that is low cost, low power, compact, reliable and is applicable across many fields and a method for fabricating such a sensor are described. Each sensor may be connected to an array of similar but distinct sensors that leverage different materials and nanotube technology to detect radiation.