Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

This invention relates to a device for rapid focus control of one or more lasers. The controlled beam (5), is refracted by the dynamic refraction device (1) whose refractive index is set by its response to the control beam (3). The invention can be used for rapid focus and re-focus of a laser on a target as might be useful in such industries as flat panel television manufacturing, fuel injector nozzle manufacture, laser material processing/machining, laser scanning and indirect drive inertial confinement fusion.

An optical device includes an optical component (e.g., a polarization volume hologram, a geometric phase device, or a polarization-insensitive diffractive optical element) having a uniform thickness and configured to modify a wavefront of a light beam that includes light in two or more wavelengths visible to human eyes, where the optical component has a chromatic aberration between the two or more wavelengths. The optical device also includes a metasurface on the optical component. The metasurface includes a plurality of nanostructures configured to modify respective phases of incident light at a plurality of regions of the metasurface, where the plurality of nanostructures is configured to, at each region of the plurality of regions, add a respective phase delay for each of the two or more wavelengths to correct the chromatic aberration between the two or more wavelengths.

A display substrate is provided. The display substrate includes a plurality of organic material film layers and a plurality of inorganic material film layers, wherein the plurality of organic material film layers and the plurality of inorganic material film layers are provided with a functional hole, and the functional hole is disposed in an aperture area of the display substrate. An organic material is provided on an inner side wall of the functional hole in at least one of the inorganic material film layers.

The document discloses transferrable hyperbolic metamaterial particles (THMMP) that display broadband, selective, omnidirectional absorption and can be transferred to secondary substrates, allowing enhanced flexibility and selective transmission. A device having metamaterial nanostructures includes a substrate and metamaterial nanostructures engaged to the substrate to form an optical layer to interact with light incident to the optical layer to exhibit optical reflection or absorption or transmission that is substantially uniform over a spectral range of different optical wavelengths associated with materials and structural features of the metamaterial nanostructures, each metamaterial nanostructure including different material layers that are interleaved to form a multi-layer nanostructure.

A pixel for an imaging sensor is disclosed that includes a photodetector and a metasurface. The photodetector includes a first surface and sidewalls that extend into the photodetector in a first direction from the first surface. The metasurface is formed on the first surface and includes nanostructures that bend a predetermined range of wavelengths of light at least 70 degrees in opposing angles from a direction that is substantially perpendicular to the first surface, and a standing wave pattern forms in an active region of the pixel. The predetermined range of wavelengths of light includes 700 nm to 1100 nm inclusive. In one embodiment, the pixel is a silicon-based photodetector, a thickness of the pixel in the first direction is less than or equal to 5 μm, and the pixel absorbs at least 20% of a power of the predetermined range of wavelengths of light.

A multilayer light-filtering structure includes a substrate, a light-filtering layer and a patterned light-blocking layer. The light-filtering layer is disposed on a surface of the substrate, in which the light-filtering layer has a first surface away from the substrate, and the light-filtering layer includes a plurality of high refractive index films and a plurality of low refractive index films. The low refractive index films are correspondingly overlapped with the high refractive index films. The patterned light-blocking layer is disposed on the first surface and includes a plurality of metal material films and a plurality of dielectric films. The dielectric films are correspondingly overlapped with the metal material films.

An apparatus for an optical detector includes a bulk acoustic wave (BAW) resonator including a piezoelectric layer and a metal layer, an acoustic Bragg mirror on the BAW resonator and including a first acoustic impedance layer and a second acoustic impedance layer different than the first acoustic impedance layer, and a plasmonic metasurface on the acoustic Bragg mirror and including structures of geometric patterns arranged in an array.

The present technology is related to optics, optical systems, and optically induced micro-/nano-fabrication methods. It includes metasurface optics, direct laser writing, and microscopy. Flat optic devices, architectures, and methods can achieve superb optical performance and structural simplicity compared to traditional bulk optical systems.

A color filter array may include a plurality of color filters arranged two-dimensionally and configured to allow light of different wavelengths to pass therethrough. Each of the plurality of color filters includes at least one Mie resonance particle and a transparent dielectric surrounding the at least one Mie resonance particle.