There is provided a terahertz device including: a terahertz element configured to generate an electromagnetic wave; a reflection film provided at a position facing the terahertz element and configured to reflect the electromagnetic wave generated from the terahertz element in one direction; and an encapsulating material configured to encapsulate the terahertz element and the reflection film.

There is provided a terahertz device including: a terahertz element configured to generate an electromagnetic wave; a reflection film provided at a position facing the terahertz element and configured to reflect the electromagnetic wave generated from the terahertz element in one direction; and an encapsulating material configured to encapsulate the terahertz element and the reflection film.

A wide viewing angle liquid crystal display includes color filters having a quantum dot and scattering particles and liquid crystal layer disposed in a microcavity, a distance between the color filter and the liquid crystal layer being sized to minimize display deterioration due to parallax.

Systems and methods for a tunable radio frequency synthesizer utilizing optical frequency combs are provided. In one embodiment, an RF signal generator comprises: an SBS pump laser segment including a first and second SBS pump laser each generating SBS laser light at different respective frequencies; a TE/TM dual comb resonator comprising a comb optical resonator coupled to the first and second SBS pump lasers, wherein the comb optical resonator generates a pair of counter-propagating optical frequency combs of different polarities from the SBS laser light; a filter resonator segment configured to provide feedback to the TE/TM dual comb resonator to lock a relative position of the pair of counter-propagating optical frequency combs, the filter resonator comprising a tunable optical filter to output a discrete tuned RF signal output based on a comb line pair that includes a single comb line from each of the pair of counter-propagating optical frequency combs.

Systems and methods for a tunable radio frequency synthesizer utilizing optical frequency combs are provided. In one embodiment, an RF signal generator comprises: an SBS pump laser segment including a first and second SBS pump laser each generating SBS laser light at different respective frequencies; a TE/TM dual comb resonator comprising a comb optical resonator coupled to the first and second SBS pump lasers, wherein the comb optical resonator generates a pair of counter-propagating optical frequency combs of different polarities from the SBS laser light; a filter resonator segment configured to provide feedback to the TE/TM dual comb resonator to lock a relative position of the pair of counter-propagating optical frequency combs, the filter resonator comprising a tunable optical filter to output a discrete tuned RF signal output based on a comb line pair that includes a single comb line from each of the pair of counter-propagating optical frequency combs.

A light conversion plate including a first glass substrate; a light conversion layer disposed on the first glass substrate and including quantum dots that convert incident light into light having a specific wavelength range; and a second glass substrate disposed on the light conversion layer. Further, a surface of at least one of the first glass substrate and the second glass substrate includes a plurality of protrusion patterns.

THz device includes: a semiconductor substrate; a first semiconductor layer disposed on the semiconductor substrate; an active element formed by being laminated on the first semiconductor layer; a second electrode connected to the first semiconductor layer to be connected to a cathode K of the active element, the second electrode disposed on the semiconductor substrate; a first electrode connected to an anode A of the active element, the first electrode disposed on the semiconductor substrate to be opposite to the second electrode; a rear reflector metal layer disposed on a back side surface of the semiconductor substrate opposite to the first semiconductor layer, wherein the active element forms a resonator between the second and first electrodes, wherein electromagnetic waves are reflected on the rear reflector metal layer, and electromagnetic waves have a surface light-emission radiating pattern or surface light-receiving pattern in a vertical direction to the semiconductor substrate.

THz device includes: a semiconductor substrate; a first semiconductor layer disposed on the semiconductor substrate; an active element formed by being laminated on the first semiconductor layer; a second electrode connected to the first semiconductor layer to be connected to a cathode K of the active element, the second electrode disposed on the semiconductor substrate; a first electrode connected to an anode A of the active element, the first electrode disposed on the semiconductor substrate to be opposite to the second electrode; a rear reflector metal layer disposed on a back side surface of the semiconductor substrate opposite to the first semiconductor layer, wherein the active element forms a resonator between the second and first electrodes, wherein electromagnetic waves are reflected on the rear reflector metal layer, and electromagnetic waves have a surface light-emission radiating pattern or surface light-receiving pattern in a vertical direction to the semiconductor substrate.

Disclosed are an optical member, a display device including the same, and a method of fabricating the same. The optical member includes a host layer; a plurality of first wavelength conversion particles in the host layer; and a plurality of second wavelength conversion particles in the host layer, wherein the first wavelength conversion particles include compound semiconductors, and the second wavelength conversion particles include phosphors.

Disclosed are an optical member, a display device including the same, and a method of fabricating the same. The optical member includes a host layer; a plurality of first wavelength conversion particles in the host layer; and a plurality of second wavelength conversion particles in the host layer, wherein the first wavelength conversion particles include compound semiconductors, and the second wavelength conversion particles include phosphors.