A silicon modulator where the doping profile varies along the lateral and/or longitudinal position in the transition zones to achieve improved performance in terms of either optical attenuation or contact access resistance or both. A silicon-based modulator includes a waveguide including a contact region and a core region, wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable.

A silicon modulator where the doping profile varies along the lateral and/or longitudinal position in the transition zones to achieve improved performance in terms of optical attenuation or contact access resistance or both. A modulator includes a core; a first transition zone that is a P-side region adjacent to the waveguide core, the first transition zone has a first longitudinal doping profile; and a second transition zone that is an N-side region adjacent to the core on an opposite side as the first transition region, the second transition zone has a second longitudinal doping profile; the first longitudinal doping profile has a variation of doping concentration along a longitudinal direction in the first transition region to mimic a first lateral doping profile, and the second longitudinal doping profile has a variation of doping concentration along a longitudinal direction in the second transition region to mimic a second lateral doping profile.

A resonator modulator for modulating light in a photonic circuit, the modulator comprising: a capacitor formed of a ring-shaped insulating region sandwiched between an outer conductive region and an inner conductive region, wherein at least one of the outer conductive regions or the inner conductive regions is a polycrystalline semiconductor material.

Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator has a layer stack arranged over a section of a waveguide core. The layer stack includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are each composed of either copper or indium-tin oxide.

An optical phase-shifting device includes a ribbed waveguide portion on an insulating layer, the waveguide portion having a p-n or p-i-n junction extending in a longitudinal direction and having a height. A pair of slab portions are disposed adjacent the waveguide portion, one on each side of the ribbed waveguide portion and on the insulation layer. The slab portion have higher doping concentrations than the respective doping concentrations in the ribbed waveguide portion. At least a portion of each slab portion has a height increasing with distance from the waveguide portion, with the slab height being smaller than that of the waveguide portion at the junction between the waveguide portion and slab portion. A pair of contact portions are formed adjacent the respective slab portion and further away from the waveguide portion. A portion of each contact portion can also have a height varying with distance from the waveguide portion.

A device is provided. The device includes a first birefringent film including a calamitic liquid crystal (“LC”) material configured with a first helical structure. The device also includes a second birefringent film stacked with the first birefringent film and including a discotic LC material configured with a second helical structure.

A wavelength tunable optical filter and a method for switching and adjusting the wavelength tunable optical filter. The optical filter includes a liquid crystal cell comprising a cholesteric liquid crystal mixture inserted between two electrodes configured to apply a voltage, the cholesteric liquid crystal mixture comprising a chiral dopant and a dual frequency liquid crystal host material, the liquid crystal cell having a reference Bragg reflection wavelength in the spectral range between 300 nm and 900 nm, and the liquid crystal cell having a first Bragg reflection wavelength, when the applied voltage is modulated at a frequency comprised in an intermediate frequency range which is above a cross-over frequency and below a high frequency limit, the first Bragg reflection wavelength being different from the reference Bragg reflection wavelength and the cholesteric liquid crystal mixture being non-scattering both in the reference Bragg reflection mode and in the first Bragg reflection mode.

The present disclosure provides a light adjusting glass and a method for manufacturing the light adjusting glass, and the light adjusting glass includes: a first substrate and a second substrate which are disposed opposite to each other, a liquid crystal layer and a retaining wall which are interposed between the first substrate and the second substrate, where liquid crystal molecules in the liquid crystal layer are deflected under an action of an electric field generated between the first substrate and the second substrate so as to control a light transmittance of the light adjusting glass; the retaining wall is in a grid shape and is configured to maintain a cell thickness between the first substrate and the second substrate during the light adjusting glass being bent, liquid crystal molecules in the liquid crystal layer are uniformly dispersed in grids of the retaining wall.

A solid state optical beam steering device including a body of electro-optical material wherein the body of electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein the body has a first face and a second face opposite the first face, a first transparent resistive sheet on the first face of the body of electro optic material, wherein the first transparent resistive sheet has a first side and a second side, and a transparent conductor on the second face of the body of electro optic material, wherein the transparent conductor is coupled to the second side of the first transparent resistive sheet.

A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.