Epitaxial growth methods and devices are described that include a textured surface on a substrate in a liquid crystal device. Geometry of the textured surface provides a organization of a liquid crystal media.

According to one embodiment, a liquid crystal display device includes a first substrate including a first alignment film covering a pixel electrode, a second substrate including a second alignment film covering a second common electrode, a sealant attaching the first substrate and the second substrate, and a liquid crystal layer held between the first alignment film and the second alignment film, wherein the first alignment film and the second alignment film are formed of a material in which a principal chain is composed of silica (SiO.sub.2), and extend at a position overlapping the sealant between an inner face and an outer face of the sealant.

A semiconductor device (100) includes: a substrate (10); and a thin film transistor (5) supported on the substrate, the thin film transistor including a gate electrode (12), an oxide semiconductor layer (18), a gate insulating layer (20) provided between the gate electrode and the oxide semiconductor layer, and a source electrode (14) and a drain electrode (16) electrically connected to the oxide semiconductor layer, wherein: the drain electrode is shaped so as to project toward the oxide semiconductor layer; a width W1 and a width W2 satisfy a relationship |W1−W2|≦1 μm, where the width W1 is a width of the oxide semiconductor layer in a channel width direction of the thin film transistor, and the width W2 is a width of the drain electrode in a direction perpendicular to a direction in which the drain electrode projects; and the width W1 and the width W2 are 3 μm or more and 6 μm or less.

The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.

The present invention provides a liquid crystal display device that may realize a wide viewing angle and realize a high-speed response. The liquid crystal display device of the present invention is a liquid crystal display device that has upper and lower substrates and a liquid crystal layer which is interposed between the upper and lower substrates, in which the lower substrate includes electrodes, the electrodes are configured with a first electrode, a second electrode in a different layer from the first electrode, and a third electrode in a same layer as the second electrode, the liquid crystal layer includes liquid crystal molecules that are horizontally aligned with respect to a main surface of the upper and lower substrates in a case where a voltage is not applied, and the liquid crystal display device is configured to execute a driving operation that causes the electrodes to generate an electric field which causes a portion of the liquid crystal molecules to rotate in a horizontal plane with respect to the main surface and causes another portion of the liquid crystal molecules to rotate in an opposite direction to the portion of the liquid crystal molecules in the horizontal plane with respect to the main surface.

A liquid crystal display device comprising: a substrate; a gate line that is disposed on the substrate and extends in a first direction; a first insulating film that is disposed on the gate line; a semiconductor pattern that is disposed on the first insulating film; a first transparent electrode that is disposed on the semiconductor pattern, and has a first electrode and a second electrode being spaced apart from each other; a second insulating film that is disposed on the first transparent electrode and partially exposes the first electrode; a data line disposed on the second insulating film and extends in a second direction different from the first direction; a second transparent electrode that is disposed on the second insulating film and at least partially overlaps the second electrode; and a connecting electrode in direct contact with a portion of the exposed first electrode and the data line.

A liquid crystal display device (100) includes a first substrate (10), a second substrate (20) and a liquid crystal layer (30), and includes a plurality of pixels (Px). The first substrate includes a first electrode (11) and a second electrode (12) capable of generating a transverse electric field in the liquid crystal layer, and an alignment film (18) defining initial alignment axis azimuths (D1, D12), The first electrode includes at least one slit (11a). In each of the plurality of pixels, the alignment film includes a first region (18a) corresponding to the at least one slit of the first electrode and a second region (18b) corresponding to a portion of the first electrode other than the at least one slit. The initial alignment axis azimuth defined by the first region of the alignment film and the initial alignment axis azimuth defined by the second region of the alignment film are different from each other.

The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

A semiconductor device (100A) includes a substrate (101) and a thin film transistor (10) supported by the substrate. The thin film transistor includes a gate electrode (102), an oxide semiconductor layer (104), a gate insulating layer (103), a source electrode (105) and a drain electrode (106). The oxide semiconductor layer includes an upper semiconductor layer (104b) which is in contact with the source electrode and the drain electrode and which has a first energy gap, and a lower semiconductor layer (104a) which is provided under the upper semiconductor layer and which has a second energy gap that is smaller than the first energy gap. The source electrode and the drain electrode include a lower layer electrode (105a, 106a) which is in contact with the oxide semiconductor layer and which does not contain Cu, and a major layer electrode (105b, 106b) which is provided over the lower layer electrode and which contains Cu. An edge of the lower layer electrode is at a position ahead of an edge of the major layer electrode.

A display device is disclosed, which comprises: a substrate; a scan line having an extension direction, disposed on the substrate and comprising a gate electrode; a semiconductor layer disposed on the gate electrode; source and drain electrodes disposed on the semiconductor layer; an insulating layer comprising a via hole and disposed on the drain electrode; a first transparent conductive layer disposed on the insulating layer, wherein a part of the first transparent conductive layer electrically connects to the drain electrode through the via hole; and a second transparent conductive layer disposed between the substrate and the first transparent conductive layer and not overlapping the via hole. Herein, the second transparent conductive layer has a first edge, the drain has a second edge, a minimum distance between the first edge and the second edge along a direction substantially perpendicular to the extension direction ranges from 0 μm to 4 μm.