Patent classifications
G02F2202/10
THIN FILM TRANSISTOR, METHOD FOR PRODUCING THE SAME, ARRAY SUBSTRATE AND DISPLAY APPARATUS
The present disclosure provides a thin film transistor, a method for producing the same, an array substrate and a display apparatus. An electrode of the thin film transistor is made of Cu or Cu alloy, and an anti-oxidization layer is used to prevent oxidization of Cu. The thin film transistor includes a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode and a drain electrode provided on a base substrate, wherein the gate electrode and/or the drain and source electrodes is/are made of Cu or Cu alloy. The thin film transistor further includes an anti-oxidization layer made of a topological insulator material, the anti-oxidization layer being provided above and in contact with the gate electrode and/or the source and drain electrodes made of Cu or Cu alloy.
ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
The embodiments of the present invention provide an array substrate and a method for manufacturing the same. The method includes: forming an ITO film on a substrate; performing an annealing treatment on the substrate; forming a gate metal film on the ITO film; and processing the ITO film and the gate metal film to obtain a common electrode pattern and a gate pattern. In the embodiments of the present invention, after film formation of ITO, an annealing process is performed. Water vapor residue in the ITO film can thus be released, thereby avoiding bumps on the interface between the ITO and other layers, and improving the yield of ADS products.
METHOD FOR MANUFACTURING COA ARRAY SUBSTRATE AND COA ARRAY SUBSTRATE
The present disclosure provides a method for manufacturing a COA array substrate and a COA array substrate. The method for manufacturing a COA array substrate according to the disclosure utilizes properties of a pixel electrode pattern on the TFT substrate and solubility of chitosan varying according to different pH values to form a quantum dot color filter film containing red filter layers, green filter layers, and blue filter layers on the TFT substrate by electrochemical deposition, quantum dots are dispersed in the electrolyte before formed to be a film, only one property change is that concentration of quantum dots in the electrolyte decreases, the electrolyte can be recycled after being supplied with quantum dots, which can achieve 100% utilization of quantum dots.
SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE
A semiconductor device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; an oxide semiconductor film including a channel region disposed over the gate electrode through the gate insulating layer and lowered-resistance region contacting the channel region; a source electrode and a drain electrode on the channel region; a first insulating film covering at least the channel region and including a contact hole that exposes the lowered-resistance region; and a second insulating film having reducing characteristics and disposed above the first insulating film across the contact hole, the second insulating film contacting the lowered-resistance region inside the contact hole.
SEMICONDUCTOR SYSTEM WITH TRANSITIONAL METAL IMPURITY FOR QUANTUM INFORMATION PROCESSING
Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.
FFS MODE ARRAY SUBSTRATE WITH TFT CHANNEL LAYER AND COMMON ELECTRODE LAYER PATTERNED FROM A SINGLE SEMICONDUCTOR LAYER AND MANUFACTURING METHOD THEREOF
An FFS mode array substrate and a manufacturing method thereof are provided. The FFS mode array substrate has: a glass substrate provided with a gate electrode thereon; a first insulation layer; a semiconductor layer having a channel region and a common electrode region to form a channel semiconductor layer on the channel region of the semiconductor layer, and form a common electrode layer on the common electrode region of the semiconductor layer by doping semiconductor thereon; and a second insulation layer provided with a first through hole and a second through hole therein.
QUANTUM DOT DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF
The present disclosure provides a quantum dot display apparatus. By adding quantum dot display technology of the present disclosure can provide sophisticated quantum dot patterns in the color filter layer and have higher resolution, color saturation and color gamut of the display apparatus, the well structure and manufacture is simple. The disclosure also provides a manufacturing method of a quantum dot display apparatus, the methods includes exposure, coating, developing process of the existing color filter to contain the surface modified red and green quantum dot resin composition with more sophisticated patterns, and making high resolution, color saturation and color gamut quantum dot display apparatus, the material preparation and fabrication process of this manufacturing method is simple, less waste of materials, low production cost, suitable for mass production.
TFT SUBSTRATES AND THE MANUFACTURING METHODS THEREOF
A TFT array substrate and the manufacturing method are disclosed, one masking process is adopted to etch the first metal oxide semiconductor layer to be the first semiconductor pattern and the second semiconductor pattern. Afterward, a doping process is applied to the first semiconductor pattern and the second semiconductor pattern. Two ends of the first semiconductor pattern are processed to be a first conductor pattern and a second conductor pattern spaced apart from each other. In addition, the second semiconductor pattern is processed to be a common electrode. The remaining first semiconductor pattern is above the bottom gate electrode. In this way, the number of masking processes adopted during the manufacturing process of the array substrate is decreased, such that the manufacturing efficiency is enhanced and the manufacturing cost is reduced.
REFLECTIVE LIQUID CRYSTAL PANEL AND DISPLAY DEVICE
A reflective liquid crystal panel including a first substrate and a second substrate disposed opposite to each other and a liquid crystal layer. A reflection layer is provided on the first substrate, and a polarizing plate is provided the second substrate. A unidirectional wavelength converting layer and a quantum dot thin film layer are sequentially laminated between the second substrate and the liquid crystal layer. The unidirectional wavelength conversion layer made of an up conversion material is used to convert the incident ambient light into a blue light or an ultraviolet light. The quantum dot thin film layer includes a plurality of light emitting areas which are arranged in array and can be excited to emit light with different colors. A display device including the reflective liquid crystal panel as mentioned above is also disclosed.
Laser beam steering device and system including the same
A laser beam steering device and a system including the laser beam steering device are provided. The laser beam steering device includes a refractive index change layer having a refractive index that changes based on an electrical signal; at least one antenna pattern disposed above the refractive index change layer; a wavelength selection layer disposed under the refractive index change layer and configured to correspond to a wavelength of a laser beam incident onto the laser beam steering device; and a driver configured to apply the electrical signal to the refractive index change layer.