The present invention discloses a TMOS based on slab PhCs with a high DOP and a large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is called as a first square-lattice slab PhC with a TE bandgap, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and a normalized operating frequency of the TMOS with high DOP and large extinction ratio is 0.252 to 0.267.

The present invention discloses a TEOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is a first square-lattice slab PhC, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three first flat dielectric pillars and a background dielectric, the first flat dielectric pillars include a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or 1 to 3 high-refractive-index flat films, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three second flat dielectric pillars and a background dielectric is a low-refractive-index dielectric; and an normalized operating frequency of the TEOS is 0.4057 to 0.406.

The present invention is based on a two-dimensional photonic crystal in which defects are inserted in a controlled manner, has the main function of division of the power of an input signal, excited in one of its six waveguides, among other three waveguides (output ones), while keeping isolation of the input port by means of two other waveguides. The operating principle of the device is based on the alignment of a dipole mode excited in the resonant cavity, in such a way that the nodes of this mode are oriented in the direction of two waveguides, so that these waveguides are not excited. Due to this alignment, each of the three output waveguides receive about one third of the power of input signal. The orientation of dipole mode is controlled by the applied DC magnetic field and the physical and geometrical parameters of the resonator.

Provided are an acousto-optic element, an acousto-optic element array, and a display apparatus including the acousto-optic element array. The acousto-optic element includes: an acousto-optic modulator which includes an acousto-optic layer formed of an acousto-optic material; a light supplier which supplies light to the acousto-optic modulator in a first direction; a first sound-wave modulator which applies first elastic waves to the acousto-optic modulator in a second direction; and a second sound-wave modulator which applies second elastic waves to the acousto-optic modulator in a third direction. The light supplied from the light supplier to the acousto-optic modulator is deflected by diffraction caused by the first elastic waves applied from the first sound-wave modulator and diffraction caused by the second elastic waves applied from the second sound-wave modulator, and is output from the acousto-optic modulator through a front side of the acousto-optic modulator.

The present invention discloses a TMOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is called as a first square-lattice slab PhC, wherein the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three first flat dielectric pillars and a background dielectric, and the first flat dielectric pillars includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or of 1 to 3 high-refractive-index flat films, or of a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three second flat dielectric pillars and a background dielectric is a low-refractive-index dielectric and an normalized operating frequency of the TMOS is 0.4057 to 0.406.

The present invention discloses a TEOS based on slab PhCs with a high DOP and large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is a first square-lattice slab PhC with a TM bandgap and a complete bandgap, wherein the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square lattice slab PhC with a TM bandgap and complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and an normalized operating frequency of the TEOS is 0.453 to 0.458.

A switchable window includes an electro-optical layer of or including an anisotropic gel of polymer stabilized highly chiral liquid crystal, for example, blue phase liquid crystal, encapsulated in, for example, a mesogenic polymer inclusive shell, that forms a self-assembled, three-dimensional photonic crystal that remains electro-optically switchable under a moderate applied voltage (e.g., electric field). The liquid crystal (LC) arrangement may be achieved via a polymer assembled blue phase liquid crystal system having a substantially continuous polymer structure case surrounding well-defined discrete bodies of liquid crystal material arranged in a cellular manner These assembled structures globally connect to form a matrix. This provides for reduction of angular birefringence of highly chiral LC systems, which advantageously reduces haze in applications such as switchable windows.

A fast optical switch can be fabricated/constructed, when vanadium dioxide (VO.sub.2) ultra thin-film or a cluster of vanadium dioxide particles (less than 0.5 microns in diameter) embedded in an ultra thin-film of a polymeric material or in a mesh of metal nanowires is activated by either an electrical pulse (a voltage pulse or a current pulse) or a light pulse just to induce rapid insulator-to-metal phase transition (IMT) in vanadium dioxide ultra thin-film or vanadium dioxide particles embedded in an ultra thin-film of a polymeric material or in a mesh of metal nanowires. The applications of such a fast optical switch for an on-Demand optical add-drop subsystem, integrating with or without a wavelength converter are also described.

A smart glass uses a guided self-assembled photonic crystal, including a photonic crystal layer that is interposed between a pair of conductive glass plates. The smart glass includes a first material and a second material having a different refractive index from the first material and surrounding the first material. Thereby, the smart glass has a color, even when a dye is not included, by strongly reflecting light in a specific wavelength range incident to the photonic crystal layer. This is because the first material is formed regularly to have a constant distance by guided self-assembly, and the smart glass thereby may obtain a target color by randomly adjusting the distance between the first materials.

Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.