The present invention describes a liquid crystal composite tuneable device for fast polarisation-independent modulation of an incident light beam comprising: (a) two supporting and functional panels, at least one of them coated with a transparent conductive electrode layer and with optionally at least one additional layer selected from an alignment layer, antireflective coating layer, thermochromic or electrochromic layer, photoconductive or photosensitive layer, and (b) a composite structure sandwiched between said two panels and made of a liquid crystal and porous microparticles infiltrated with said liquid crystal. The porous microparticles have an average refractive index approximately equals to one of the liquid crystal principal refractive indices, matching that of the liquid crystal at one orientational state (for example, parallel n.sub.∥), and exhibiting large mismatch at another orientational state (for example, perpendicular n.sub.⊥). This refractive index mismatch between said microparticles and said liquid crystal is tuned by applying an external electric or magnetic field, thermally or optically.

An electrochemical aptamer-based (E-AB) sensor is disclosed. The sensor is a closed bipolar electrode having a first end and a second end. The first end comprises an electrochromic material. The second end comprises an electrocatalyst and an oligonucleotide aptamer tethered to the second end. Further, the oligonucleotide aptamer is labelled with a redox indicator.

Composite assemblies are described that can be switched from a transparent state to a non transparent state, and in some examples even switched between different colors/reflectivities in the non transparent state. Switching between these states can be initiated by application of an electrical current to Ag carbon nanotube yarns in contact with an electrochromic electrolyte. The carbon nanotube yarns increase the efficiency with which electrons are provided to an electrolyte.

Disclosed in the present invention are a chalcogenide phase change material based all-optical switch and a manufacturing method therefor, relating to the field of optical communications. The all-optical switch comprises: stacked in sequence, a cover layer film, a chalcogenide phase change material film, an isolation layer film, a silicon photonic crystal, and a substrate. The silicon photonic crystal comprises a nano-porous structure such that the silicon photonic crystal has a Fano resonance effect. When the all-optical switch is used, the state of the chalcogenide phase change material film is controlled by means of laser, and the resonance state of the silicon photonic crystal is modulated to implement modulation of signal light transmissivity; the modulation range is within a communication band from 1500 nm to 1600 nm, thereby implementing an optical switch. The all-optical switch of the present invention has the characteristics of high contrast ratio, high rate and low loss.

A color conversion panel includes a first color conversion layer, a second color conversion layer, and a light wavelength conversion layer. The first color conversion layer includes a first semiconductor nanocrystal set for providing red light. The second color conversion layer neighbors the first color conversion layer and includes a second semiconductor nanocrystal set for providing first green light. The light wavelength conversion layer neighbors the second light conversion layer, may provide blue light, and includes a third semiconductor nanocrystal set for providing second green light.

An electronic device includes a light source member configured to provide a first light, a color conversion member disposed on the light source member and including a first conversion material that converts the first light into a second light and a second conversion material that converts the first light into a third light, and a low-refractive index layer disposed on the light source member and disposed on at least one of upper and lower portions of the color conversion member. The low-refractive index layer includes a matrix part, a plurality of hollow inorganic particles dispersed in the matrix part, and a plurality of void parts defined by the matrix part.

EC film stacks and different layers within the EC film stacks are disclosed. Methods of manufacturing these layers are also disclosed. In one embodiment, an EC layer comprises nanostructured EC layer. These layers may be manufactured by various methods, including, including, but not limited to glancing angle deposition, oblique angle deposition, electrophoresis, electrolyte deposition, and atomic layer deposition. The nanostructured EC layers have a high specific surface area, improved response times, and higher color efficiency.

EC film stacks and different layers within the EC film stacks are disclosed. Methods of manufacturing these layers are also disclosed. In one embodiment, an EC layer comprises nanostructured EC layer. These layers may be manufactured by various methods, including, including, but not limited to glancing angle deposition, oblique angle deposition, electrophoresis, electrolyte deposition, and atomic layer deposition. The nanostructured EC layers have a high specific surface area, improved response times, and higher color efficiency.

A display apparatus includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including an oxide semiconductor, a channel region and a first region which extends from the channel region to a first edge of the semiconductor layer and has a lower resistance than that of the channel region, a first inorganic insulating layer covering the semiconductor layer and including a first contact hole which overlaps the first region, a first electrode on the first inorganic insulating layer, overlapping the first region and electrically connected to the first region through the first contact hole, a gate electrode on the first inorganic insulating layer and overlapping the channel region, a second inorganic insulating layer covering the first electrode and the gate electrode, and a display element on the second inorganic insulating layer.

An ink composition, a light conversion layer and a light emitting device are provided. The resin composition includes a quantum dot (A), a first resin (B1), a second resin (B2), an ethylenically unsaturated monomer (C), an initiator (D) and a solvent (E). The first resin (B1) is an alkali-insoluble resin, and the second resin (B2) is an alkali-soluble resin. The first resin (B1) includes a compound represented by the following Formula (1):

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In Formula (1), n is an integer from 1 to 10, X is benzene, toluene or naphthalene, and Y is toluene, methylnaphthalene, tetrahydrodicyclopentadiene, or 4,4′-dimethyl-1,1′-biphenyl.