A display panel and a manufacturing method are provided. The display panel includes a substrate, multiple active switches disposed on the substrate and a low dielectric constant protective layer. The low dielectric constant protective layer is formed on the numerous active switches. A relative dielectric constant of the low dielectric constant protective layer is smaller than a relative dielectric constant of silicon nitride.

A novel liquid crystal display device without a decrease in display quality. The liquid crystal display device includes a pixel for displaying a still image at a frame frequency of less than or equal to 1 Hz, and a liquid crystal layer in the pixel has a dielectric constant anisotropy of greater than or equal to 2 and less than or equal to 5. With the above structure, a change in voltage applied to a pixel can be kept within an acceptable range of a deviation in gray level for displaying the same still image. Thus, flickers due to a low refresh rate can be reduced, which leads to an increase in display quality.

An optical modulator includes an optical waveguide, a first electrode, a second electrode, and a first low dielectric constant layer. The optical waveguide includes a material having an electro-optic effect. The first electrode includes a semiconductor material and is spaced by a gap from the optical waveguide. The second electrode is positioned to provide a potential difference with the first electrode and apply an electric field to the optical waveguide. The first low dielectric constant layer has a refractive index smaller than that of the optical waveguide, and is provided in the gap between the first electrode and the optical waveguide.

A scanned antenna (1000) is a scanned antenna including antenna elements (U) arranged together, the scanned antenna including: a TFT substrate (101) including a first dielectric substrate (1), TFTs, gate bus lines, source bus lines, and patch electrodes (15); a slot substrate (201) including a second dielectric substrate (51) a slot electrode (55); a liquid crystal layer (LC) provided between the TFT substrate and the slot substrate; and a reflective conductive plate (65). The slot electrode includes slots (57) arranged so as to correspond to the patch electrodes. As seen from the normal direction to the first dielectric substrate, a plurality of spacer structures (75) provided between the TFT substrate and the slot substrate are arranged so as not to overlap with first regions (Rp1) and/or second regions (Rp2), where the first regions are regions that are within a distance of 0.3 mm from edges of the slots and the second regions are regions that are within a distance of 0.3 mm from edges of the patch electrodes.

There is provided a high-definition liquid crystal display device that can prevent flicker due to a reduction in the pixel potential in a low-frequency drive of about 10 Hz to reduce power consumption. The pixel has a TFT formed of Poly-Si as a switching element. In the pixel, a capacitance insulating film is formed on a planar first electrode on which a comb-shaped second electrode is fanned. When the film thickness of the insulating film is d and the dielectric constant at 10 Hz frequency is , it is given that d510.sup.6 m at 10 Hz frequency. The capacitance insulating film does not have a hysteresis characteristic. The refractive index of the capacitance insulating film with respect to a light of a wavelength of 632.8 nm is 1.7 to 2.0.

Embodiments of the present disclosure provides a display panel and a display apparatus. The display panel includes: a substrate; a plurality of strip electrode groups, disposed on the substrate, each of the strip electrode groups including a first strip electrode and a second strip electrode; a liquid crystal layer, disposed on the first strip electrode and the second strip electrode; a color filter layer, disposed on the liquid crystal layer and including a plurality of color filter sublayers, wherein dielectric constants of at least two of color filter sublayers are different; and a plate electrode, disposed on the color filter layer.

A substrate for display, a display panel and a display device are provided. The substrate for display comprises a base comprising an upper surface and a lower surface which are opposite to each other. The lower surface of the base is formed with scattering microstructures, and the upper surface of the base is formed with a layer structure for display, thereby achieving ultrathin appearance and low cost of the display device.

Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.

A substrate with a dielectric thin film 1 includes a single-crystal substrate, a stress relaxation layer, and a dielectric thin film, in which the stress relaxation layer is made of a c-axis-oriented epitaxial film, and includes a twin crystal structure of LiNbO.sub.3 including a first and a second crystal existing at a position obtained by rotating the first crystal 180 about a c-axis and a LiNb.sub.3O.sub.8 phase, the dielectric thin film is made of a lithium niobate film which is a c-axis-oriented epitaxial film, has the twin crystal structure of LiNbO.sub.3, has a film thickness of 0.5 m to 2 m, and has a maximum domain width greater than a maximum domain width of the stress relaxation layer, and a percentage of a film thickness of the stress relaxation layer to the film thickness of the dielectric thin film is 5% to 25%.

Electro-optical modulators and methods of fabrication are disclosed. An electro-optical modulator includes a Mach-Zehnder interferometer containing an intrinsic silicon layer semiconductor layer and a coplanar waveguide. Signals from the coplanar waveguide are capacitively coupled to the Mach-Zehnder interferometer through first and second dielectric layers.