An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

An optical waveguide modulator with automatic bias control is disclosed. A portion of the modulator light is mixed with reference light and converted to one or more electrical feedback signals. An electrical feedback circuit controls the modulator bias responsive to the feedback signals.

In a waveform measurement method, first, initial pulsed light is spatially dispersed for respective wavelengths. Next, the initial pulsed light is input to a polarization dependent type SLM in a state where a polarization plane is inclined with respect to a modulation axis direction, and a phase spectrum of a first polarization component of the initial pulsed light along the modulation axis direction is modulated, to cause a time difference between first pulsed light Lp.sub.1 including the first polarization component and second pulsed light Lp.sub.2 including a second polarization component orthogonal to the first polarization component. After combining the wavelength components, an object is irradiated with the pulsed light Lp.sub.1 and the pulsed light Lp.sub.2, and light generated in the object is detected. The above detection operation is performed while changing the time difference, and a temporal waveform of the pulsed light Lp.sub.1 is obtained.

An optical device may include a waveguide-based Mach-Zehnder (MZ) interferometer associated with performing polarization multiplexing or demultiplexing. The waveguide-based MZ interferomenter may include a first MZ arm, a second MZ arm, and a set of stress-balancing trenches. A portion of the first MZ arm may be between at least two stress-reducing trenches of a plurality of stress-reducing trenches. The plurality of stress-reducing trenches may be in a cladding layer on a substrate. The set of stress-balancing trenches may be on an opposite side of the second MZ arm from the plurality of stress-reducing trenches. The set of stress-balancing trenches may be in the cladding layer on the substrate.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite:

(Abs.sub.firstAbs.sub.valley)/Abs.sub.first=VD.

In a waveform measurement method, first, initial pulsed light is spatially dispersed for respective wavelengths. Next, the initial pulsed light is input to a polarization dependent type SLM in a state where a polarization plane is inclined with respect to a modulation axis direction, and a phase spectrum of a first polarization component of the initial pulsed light along the modulation axis direction is modulated, to cause a time difference between first pulsed light Lp.sub.1 including the first polarization component and second pulsed light Lp.sub.2 including a second polarization component orthogonal to the first polarization component. After combining the wavelength components, an object is irradiated with the pulsed light Lp.sub.1 and the pulsed light Lp.sub.2, and light generated in the object is detected. The above detection operation is performed while changing the time difference, and a temporal waveform of the pulsed light Lp.sub.1 is obtained.