An image forming system includes a spatial light modulator (SLM) including a plurality of pixels. Each pixel is configured to diffract incident light and cause the diffracted light to exit the SLM, where a first diffraction order of light exiting the SLM passes through a first exit pupil and higher diffraction orders of light exiting the SLM pass through additional exit pupils having different positions from the first exit pupil. Control logic operatively coupled to the plurality of pixels is configured to control each pixel to control its modulation of the light incident on the pixel and cause the plurality of pixels to collectively form an image at each exit pupil. A light source is configured to emit incident light toward the SLM. A resampling layer is configured to subsample each pixel electrode with two or more samples per pixel to increase a spacing between each exit pupil.

An optical phase-shifting device includes a ribbed waveguide portion on an insulating layer, the waveguide portion having a p-n or p-i-n junction extending in a longitudinal direction and having a height. A pair of slab portions are disposed adjacent the waveguide portion, one on each side of the ribbed waveguide portion and on the insulation layer. The slab portion have higher doping concentrations than the respective doping concentrations in the ribbed waveguide portion. At least a portion of each slab portion has a height increasing with distance from the waveguide portion, with the slab height being smaller than that of the waveguide portion at the junction between the waveguide portion and slab portion. A pair of contact portions are formed adjacent the respective slab portion and further away from the waveguide portion. A portion of each contact portion can also have a height varying with distance from the waveguide portion.

The phase modulation device 3 includes a first phase modulation element 11 which modulates a phase of a light flux in accordance with a voltage applied to each of a plurality of first electrodes in accordance with a first ratio of a second aberration component to a first aberration component of a wave front aberration generated by an optical system including an objective lens 4; a second phase modulation element 12 which modulates a phase of a light flux in accordance with a voltage applied to each of a plurality of second electrodes in accordance with a second ratio of the second aberration component to the first aberration component; and a control circuit 13 which controls voltages applied to each of first electrodes and each of second electrodes in accordance with a distance from the objective lens to a light focusing position of the light flux.

An object of the present disclosure is to provide a phase modulator, a lighting system, and a projector that allow for improving diffraction efficiency in a light phase modulation element. The phase modulator according to the present disclosure includes a light phase modulation element that has a plurality of pixels arranged with the pixel pitches p being different from each other to have a pixel structure suppressing occurrence of high-order diffraction light and that modulates a phase of light with respect to each of the pixels. Moreover, the phase modulator according to the present disclosure includes a capturing optical system that captures a plurality of fluxes of high-order diffraction light generated in each of the pixels.

This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a common electrode 25, a plurality of pixel electrodes 21, and a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated and reflected by the spatial light modulator SLM and is output to the outside.

Methods, systems, and devices are described for electro-optic tuning. An example device may comprise a first layer comprising a transition metal di-chalcogenide material, a second layer comprising a conductive material, and a third layer comprising a dielectric material. The third layer may be disposed at least partially between the first layer and the second layer. An electrical potential difference applied between the first layer and the second layer may cause a tunable refractive index change in the first layer.

An optical transmitter and a method of producing a low-photon-density modulated optical signal are disclosed. The optical transmitter and method include an optical source configured to emit a continuous optical carrier waveform, a dilation module configured to apply a spreading code to a data payload to spread each of the plurality of symbols in time to expand the symbol duration by a dilation factor and produce a corresponding plurality of time-dilated symbols, the plurality of time-dilated symbols having a lower photon density than the plurality of symbols; a mapping module configured to map the plurality of time-dilated symbols to a modulation scheme; and a modulator configured to modulate the optical carrier waveform with the plurality of time-dilated symbols according to the modulation scheme to produce the low-photon-density modulated optical signal encoded with the plurality of time-dilated symbols corresponding to the data payload.

Configurable optical device comprising an optical element (1) or various optical elements (1) arranged in series, wherein each element (1) comprises an active region (2) with an entry surface (21) and an exit surface (22) for light beams, and a perimeter (3); each element (1) comprising at least one first transparent electrode (4) and at least one transparent counter electrode (5) the corresponding electrical connections being located in the perimeter (3); the device being configured such that, upon application of a potential difference between electrodes (4, 5) of each element (1), an electric field that alters the degree of commutation in different regions of the active zone (2) of each element (1) is generated, thus creating a varying optical path profile in each element (1), which allows an incident light beam to be focused in different ways, depending on the electric field applied to each electrode.

A semiconductor Mach-Zehnder optical modulator includes input side lead-out lines, phase modulation electrode lines, output side lead-out lines, electrodes that apply modulation signals propagating through the phase modulation electrode lines to respective waveguides, and ground lines. Furthermore, at least one n-type semiconductor layer or p-type semiconductor layer is formed between a substrate and a dielectric layer in a lower layer under the output side lead-out lines intermittently along the output side lead-out lines.

An optical resonant modulator based on coupling modulation, comprising a resonant structure with an embedded Mach-Zehnder interferometer that is differentially driven to induced amplitude modulation at the output port. The principle of coupling modulation enables high data/baud rates to be achieved in a photonic integrated circuit, e.g. silicon, footprint that is considerably smaller than that of a conventional traveling-wave Mach-Zehnder modulator, in particular by utilizing space saving features, such as ring resonator phase shifters and bend waveguide arms.