A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

Various techniques provide optical limiters for facilitating aperture protection. In one example, a system includes an optical device. The optical device includes a photocathode configured to emit electrons in response to an applied voltage and an incident light. The optical device further includes a phase change material. At least a portion of the phase change material is configured to receive the electrons from the photocathode. The portion is further configured to transition from a first phase to a second phase in response to the electrons. The portion is further configured to reflect the incident light when the portion of the phase change material is in the second phase. Related methods and products are also provided.

A display substrate includes: a first base substrate (20), and gate lines (4) and data lines (5) on the first base substrate (20). The gate lines (4) extend in a first direction (X), and the data lines (5) extend in a second direction (Y). The gate lines (4) and the data lines (5) define pixel units, each of which includes a thin film transistor (7), a pixel electrode (8) and a common electrode (9). At least some of the pixel units are respectively configured with conductive bridge lines (10) provided in the same layer as the pixel electrode (8). In a pixel unit configured with the conductive bridge line (10), a first hollowed-out structure (13) and a second hollowed-out structure (14) are provided on opposite sides of the pixel electrode (8) in the first direction, to weaken or even eliminate mura (e.g., nonuniformity in brightness or color).

A Q switch resonator includes: an optical resonator comprising at least two mirrors, and configured to accumulate power of a continuous wave or an intermittent continuous wave incident from an outside; and a switching element provided in the optical resonator. The switching element is configured such that, when the power accumulated in the optical resonator increases to a predetermined level, the switching element outputs an optical pulse by lowering a Q factor from a first level to a second level lower than the first level.

Various techniques provide optical limiters for facilitating aperture protection. In one example, a system includes an optical device. The optical device includes a photocathode configured to emit electrons in response to an applied voltage and an incident light. The optical device further includes a phase change material. At least a portion of the phase change material is configured to receive the electrons from the photocathode. The portion is further configured to transition from a first phase to a second phase in response to the electrons. The portion is further configured to reflect the incident light when the portion of the phase change material is in the second phase. Related methods and products are also provided.

A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

An optical device may include a sacrificial limiter filter including at least one layer of graphene disposed on a substrate. The at least one layer of graphene may be configured to absorb and scatter at least a portion of electromagnetic radiation incident on the at least one layer of graphene.

A display substrate includes: a first base substrate, and gate lines and data lines on the first base substrate. The gate lines extend in a first direction, and the data lines extend in a second direction. The gate lines and the data lines define pixel units, each of which includes a thin film transistor, a pixel electrode and a common electrode. At least some of the pixel units are respectively configured with conductive bridge lines provided in the same layer as the pixel electrode. In a pixel unit configured with the conductive bridge line, a first hollowed-out structure and a second hollowed-out structure are respectively provided on two opposite sides of the pixel electrode in the first direction. A length of the second hollowed-out structure in the first direction is greater than or equal to 6 ?m.

Systems and methods for preventing high-radiant-flux light, such as laser light or a nuclear flash, from causing harm to imaging devices, such as a camera or telescope. In response to detection of high-radiant-flux light, the proposed systems have the feature in common that a shutter is closed sufficiently fast that light from the source will be blocked from reaching the image sensor of the imaging device. Some of the proposed systems include a folded optical path to increase the allowable reaction time to close the shutter.

The present invention relates to a device and a method for limiting the output of a laser, wherein a reflecting device arranged in the optical path of a laser beam comprises a switching layer which comprises or consists of a material exhibiting a metal-insulator transition and a reflecting layer which is positioned downstream of the switching layer in the optical path of the laser beam, wherein the reflecting device is configured such that an output of the laser beam when it is incident upon the reflecting device which exceeds a predefined threshold causes a change in the refractive index of the material in the switching layer, and the output of the laser beam reflected by the reflecting device is thus reduced as compared to the output of the laser beam when it is incident upon the reflecting device due to reduced reflection by the reflecting device.