Method, apparatus for imparting direction-selective light attenuation. A method for imparting direction-selective light attenuation to a photomask may include assigning different attenuation levels to light rays of different directions of incidence. The method may also include computing an array of shading elements to attenuate the light rays with the assigned different attenuation levels, depending on the direction of incidence of the light rays. The method may further include inscribing the array of shading elements within a substrate of the photomask.

A semiconductor lithography projection exposure apparatus includes a projection lens which includes a manipulator. The manipulator includes an optical element; a base frame; a sensor frame arranged on the base frame; and a sensor arranged on the sensor frame. The manipulator is configured to correct wavefront aberrations of used optical radiation that pass through the optical element during the operation of the projection lens. The manipulator is arranged directly after an object plane of the apparatus along a path of the used optical radiation. The sensor is configured to measure a deformation or a deflection of the optical element. A coefficient of thermal expansion of the sensor frame is within 16 ppm/K of a coefficient of thermal expansion of the base frame.

An illumination unit for lithographic exposure and a device for lithographic exposure are disclosed. In an embodiment the illumination unit includes a beam source, an electronically drivable beam deflection element for generating a temporally varying two-dimensional beam deflection, a collimation lens, a beam homogenizing element, a Fourier lens and a field lens.

This disclosure provides systems, methods, and apparatus related to extreme ultraviolet lithography. In one aspect, a method of fabricating a mask for extreme ultraviolet lithography includes providing a structure, depositing an absorber layer over the reflective layer, and patterning the absorber layer. The structure includes a substrate and a reflective layer disposed over the substrate. The absorber layer comprises A and B. A is chromium (Cr) or vanadium (V). B is silver (Ag), indium (In), cobalt (Co), antimony (Sb), tin (Sn), or tellurium (Te). Patterning the absorber layer includes etching the absorber layer to remove the absorber layer in a first region while leaving the absorber layer in a second region. The etching is performed at a temperature of about ?80? C. to 0? C.

An imaging device includes a plurality of operation modes. The imaging device includes a temperature sensor and an environmental temperature estimation unit. The temperature sensor is provided inside of the imaging device. The environmental temperature estimation unit estimates an outside environmental temperature of the imaging device based on an output of the temperature sensor and the operation modes.

An imaging device includes a plurality of operation modes. The imaging device includes a temperature sensor and an environmental temperature estimation unit. The temperature sensor is provided inside of the imaging device. The environmental temperature estimation unit estimates an outside environmental temperature of the imaging device based on an output of the temperature sensor and the operation modes.

An illumination intensity correction device serves for predefining an illumination intensity over an illumination field of a lithographic projection exposure apparatus. The correction device has a plurality of bar-shaped individual stops arranged alongside one another and having bar axes arranged parallel to one another, which are arranged in a manner lined up alongside one another transversely with respect to the bar axes. The individual stops are displaceable into a predefined intensity correction displacement position at least along their respective bar axis with the aid of a displacement drive individually for the purpose of predefining an intensity correction of an illumination of the illumination field.

Metrology apparatus and methods are disclosed. In one arrangement, a metrology apparatus comprises an optical system that illuminates a structure with measurement radiation and detects the measurement radiation scattered by the structure. The optical system comprises an array of lenses that focuses the scattered measurement radiation onto a sensor. A dispersive element directs scattered measurement radiation in each of a plurality of non-overlapping wavelength bands exclusively onto a different respective lens of the array of lenses.

A micromirror of a micromirror array in an illumination system of a microlithographic projection exposure apparatus can be tilted through a respective tilt angle about two tilt axes. The micromirror is assigned three actuators which can respectively be driven by control signals in order to tilt the micromirror about the two tilt axes. Two control variables are specified, each of which is assigned to one tilt axis and which are both assigned to unperturbed tilt angles. For any desired combinations of the two control variables, as a function of the two control variables, one of the three actuators is selected and its control signal is set to a constant value, in particular zero. The control signals are determined so that, when the control signals are applied to the other two actuators, the micromirror adopts the unperturbed tilt angles as a function of the two control variables.

A micromirror of a micromirror array in an illumination system of a microlithographic projection exposure apparatus can be tilted through a respective tilt angle about two tilt axes. The micromirror is assigned three actuators which can respectively be driven by control signals in order to tilt the micromirror about the two tilt axes. Two control variables are specified, each of which is assigned to one tilt axis and which are both assigned to unperturbed tilt angles. For any desired combinations of the two control variables, as a function of the two control variables, one of the three actuators is selected and its control signal is set to a constant value, in particular zero. The control signals are determined so that, when the control signals are applied to the other two actuators, the micromirror adopts the unperturbed tilt angles as a function of the two control variables.