A microlithography optical system includes a projection objective and an illumination system that includes a temperature compensated polarization-modulating optical element. The temperature compensated polarization-modulating optical element includes a first polarization-modulating optical element of optically active material, the first polarization-modulating optical element having a first specific rotation with a sign. The temperature compensated polarization-modulating optical element includes also includes a second polarization-modulating optical element of optically active material, the second polarization-modulating optical element having a second specific rotation with a sign opposite to the sign of the first specific rotation.

Online calibration of laser performance as a function of the repetition rate at which the laser is operated is disclosed. The calibration can be periodic and carried out during a scheduled during a non-exposure period. Various criteria can be used to automatically select the repetition rates that result in reliable in-spec performance. The reliable values of repetition rates are then made available to the scanner as allowed values and the laser/scanner system is then permitted to use those allowed repetition rates.

A lithography apparatus includes a plurality reticle edge masking assemblies (REMAs), wherein each REMA of the plurality of REMAs is positioned to receive one of a plurality of light beams, and each REMA of the plurality of REMAs comprises a movable slit for passing the received light beam therethrough. The lithography apparatus includes a controller for controlling a speed of the movable slit based on a size of the movable slit, an intensity of the one or more collimated light beams, or a material to be patterned. The lithography apparatus further includes a single mask having a single pattern, wherein the mask is configured to receive light from every REMA of the plurality of REMAs. The lithography apparatus includes a projection lens configured to receive light transmitted through the single mask, wherein the lithography apparatus is configured to introduce an immersion liquid into a space adjacent to the projection lens.

A method for measuring an optical symmetry property on a microlithographic projection exposure apparatus (10) together with a microlithographic projection exposure apparatus and an associated microlithographic measurement mask are disclosed. The method includes arranging at least one measurement structure (60; 66) in an exposure beam path (32) of the projection exposure apparatus, wherein the measurement structure includes a pinhole stop (62) and a diffraction grating (64) arranged within an aperture (63) of the pinhole stop. Furthermore, the method includes measuring an intensity of a diffracted radiation generated at the diffraction grating (64) after interaction of the radiation with at least one optical element (22) of the projection exposure apparatus.

A projection exposure apparatus for microlithography, in particular an EUV projection exposure apparatus, having a beam path along which propagates electromagnetic radiation with which the projection exposure apparatus is operated, and having at least one filter (55) arranged in the beam path, wherein the projection exposure apparatus furthermore comprises at least one sensor device for monitoring the filter, wherein at least one blocking element (60) is provided which is movable between a standby position and a bather position, and wherein the movement of the blocking element can be effected at least in a manner dependent on a signal of the sensor device. An associated method for operating an apparatus of this type is also disclosed.

An illumination system of a microlithographic projection exposure apparatus includes an optical integrator that includes an array of optical raster elements. A condenser superimposes the light beams associated with the optical raster elements in a common field plane. A modulator modifies a field dependency of an angular irradiance distribution in an illuminated field. Units of the modulator are associated with one of the light beams and are arranged at a position in front of the condenser such that only the associated light beam impinges on a single modulator unit. The units are configured to variably redistribute, without blocking any light, a spatial and/or an angular irradiance distribution of the associated light beams. A control device controls the modulator units if it receives an input command that the field dependency of the angular irradiance distribution in the mask plane shall be modified.

A digital exposure device including a GLV or a DMD. The digital exposure device also includes: a stage to support and move a substrate in a scan direction; an optical system disposed between the stage and the GLV or the DMD, to form a pattern on the substrate by modulating light received from the GLV or the DMD; and a control unit to control the a width of the pattern by a unit, the unit being obtained by dividing the width of the pattern by a natural number m, in the second direction.

A mirror serves for use for guiding illumination and imaging light in EUV projection lithography. The mirror has a reflective surface, the reflective surface forming a magnetic field in such a way that at least one polarization property of the illumination and imaging light is influenced via the magnetic field upon reflection. A mirror system has, besides the mirror, additionally a magnetization predefining device for predefining a magnetization of the reflective surface of the mirror. An illumination optical unit has at least one mirror of this type or at least one facet mirror device comprising at least one individual mirror constructed in this way. In the case of a mirror of this type, the illumination and/or imaging properties of illumination and/or imaging light guided via the mirror are improved.

An illumination system is disclosed having a polarization member that includes first and second polarization modifiers movable into at least partial intersection with a radiation beam such that the respective polarization modifier applies a modified polarization to at least part of the beam. The illumination system further includes an array of individually controllable reflective elements positioned to receive the radiation beam after it has passed the polarization member, and a controller configured to control movement of the first and second polarization modifiers such that the first and second polarization modifiers intersect with different portions of the radiation beam.

An imaging assembly for directing a pattern of energy at a workpiece includes (i) a reticle that defines a reticle array that includes a plurality of spaced apart, transmitting regions; (ii) an illumination source that generates an illumination beam; and (iii) a director assembly that selectively directs the illumination beam at the reticle array, the director assembly includes a plurality of director elements that are individually controlled to selectively control the beam pattern that is directed at the reticle array.