A grounding cap module includes a main body, a frame portion, and a cap portion. The main body includes a first opening penetrating the main body and a grounding portion disposed on a periphery of the main body and configured to be electrically grounded. The frame portion is disposed on the main body and includes a second opening aligned with the first opening. The cap portion is disposed on the frame portion and covers the second opening, wherein the first opening, the second opening and the cap portion define a receiving cavity. A gas injection device and an etching apparatus using the same are also provided.

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

Provided is an EUV transmissive membrane including a main layer composed of metallic beryllium and a protective layer composed of beryllium nitride that covers at least one side of the main layer.

Provided is an EUV transmissive membrane including a main layer composed of metallic beryllium and a protective layer composed of beryllium nitride that covers at least one side of the main layer.

Devices, systems, and methods of generating and providing a target topographic map for finishing a photomask blank are disclosed. A method includes receiving topographic data corresponding to an uncompleted photomask blank, receiving functional specifications for flatness of an acceptable photomask blank, and generating the target topographic map for first and/or second major surfaces of the blank, which provides instructions for removing material from the first and/or second major surfaces such that the first and second major surfaces achieve a flatness that passes each functional specification. The amount of material removed reflects a reduction in material necessary to pass the functional specifications. The method further includes transmitting the target topographic map to the finishing device to utilize a finishing technique to implement changes to the photomask blank according to the target topographic map by removing the material from the photomask blank to achieve a photomask blank that passes the functional specifications.

Devices, systems, and methods of generating and providing a target topographic map for finishing a photomask blank are disclosed. A method includes receiving topographic data corresponding to an uncompleted photomask blank, receiving functional specifications for flatness of an acceptable photomask blank, and generating the target topographic map for first and/or second major surfaces of the blank, which provides instructions for removing material from the first and/or second major surfaces such that the first and second major surfaces achieve a flatness that passes each functional specification. The amount of material removed reflects a reduction in material necessary to pass the functional specifications. The method further includes transmitting the target topographic map to the finishing device to utilize a finishing technique to implement changes to the photomask blank according to the target topographic map by removing the material from the photomask blank to achieve a photomask blank that passes the functional specifications.

A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.

Techniques for improved extreme ultraviolet (EUV) patterning using assist features, related transistor structures, integrated circuits, and systems, are disclosed. A number of semiconductor fins and assist features are patterned into a semiconductor substrate using EUV. The assist features increase coverage of absorber material in the EUV mask, thereby reducing bright field defects in the EUV patterning. The semiconductor fins and assist features are buried in fill material and a mask is patterned that exposes the assist features and covers the semiconductor fins. The exposed assist features are partially removed and the protected active fins are ultimately used in transistor devices.

Techniques for improved extreme ultraviolet (EUV) patterning using assist features, related transistor structures, integrated circuits, and systems, are disclosed. A number of semiconductor fins and assist features are patterned into a semiconductor substrate using EUV. The assist features increase coverage of absorber material in the EUV mask, thereby reducing bright field defects in the EUV patterning. The semiconductor fins and assist features are buried in fill material and a mask is patterned that exposes the assist features and covers the semiconductor fins. The exposed assist features are partially removed and the protected active fins are ultimately used in transistor devices.