A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.

An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

Embodiments of the present disclosure relate to a photomask. The photomask may include: a substrate; and one or more pixel units formed over the substrate. Each pixel unit may include: at least one polymer crystal element configured to interact with extreme ultraviolet (EUV) light based on an orientation of the polymer crystal element; and a plurality of electrodes configured to control the orientation of the polymer crystal element by applying voltage across the polymer crystal element. Each pixel unit is controlled by the respective plurality of electrodes independently, and the one or more pixel units generate a pattern for lithography upon exposure to the EUV light.

Embodiments of the present disclosure relate to a photomask. The photomask may include: a substrate; and one or more pixel units formed over the substrate. Each pixel unit may include: at least one polymer crystal element configured to interact with extreme ultraviolet (EUV) light based on an orientation of the polymer crystal element; and a plurality of electrodes configured to control the orientation of the polymer crystal element by applying voltage across the polymer crystal element. Each pixel unit is controlled by the respective plurality of electrodes independently, and the one or more pixel units generate a pattern for lithography upon exposure to the EUV light.

An EUV mask inspection device includes: an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm; a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern; and an EUV lighting unit for creating EUV illumination light by obtaining 1.sup.st diffraction light reflected after radiating EUV light output from the EUV light source to the multilayer reflection zone plate. The EUV mask inspection device further includes: an aperture for providing monochromatic light or reducing a light radiation area by reducing a linewidth of optical wavelength radiated from the EUV lighting unit; a transmissive zone plate for forming expanded light by collecting reflected or scattered light after radiating light passing through the aperture to the EUV mask; and an image sensor for measuring intensity of light through EUV mask measured light.

An EUV mask inspection device includes: an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm; a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern; and an EUV lighting unit for creating EUV illumination light by obtaining 1.sup.st diffraction light reflected after radiating EUV light output from the EUV light source to the multilayer reflection zone plate. The EUV mask inspection device further includes: an aperture for providing monochromatic light or reducing a light radiation area by reducing a linewidth of optical wavelength radiated from the EUV lighting unit; a transmissive zone plate for forming expanded light by collecting reflected or scattered light after radiating light passing through the aperture to the EUV mask; and an image sensor for measuring intensity of light through EUV mask measured light.

A reticle enclosure includes a base including a first surface, a cover including a second surface and disposed on the base, wherein the base and the cover form an internal space therebetween that includes a reticle, and a layer of electrostatic discharge material disposed on the first surface, wherein the electrostatic discharge material reduces electrostatic charges on the reticle.

A reticle enclosure includes a base including a first surface, a cover including a second surface and disposed on the base, wherein the base and the cover form an internal space therebetween that includes a reticle, and a layer of electrostatic discharge material disposed on the first surface, wherein the electrostatic discharge material reduces electrostatic charges on the reticle.

A reticle enclosure includes a base including a first surface, a cover including a second surface and disposed on the base, wherein the base and the cover form an internal space therebetween to include a reticle, and a layer of elastomer or gelatinous material disposed on at least one of the first surface and the second surface, wherein the layer of elastomer or gelatinous material is disposed between the base and the cover and contacts either the base or the cover.