A reticle enclosure includes a base including a first surface, a cover including a second surface and disposed on the base, wherein the base and the cover form an internal space therebetween to include a reticle, and a layer of elastomer or gelatinous material disposed on at least one of the first surface and the second surface, wherein the layer of elastomer or gelatinous material is disposed between the base and the cover and contacts either the base or the cover.

This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).

This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).

The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp.sup.2-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp.sup.2-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp.sup.2-hybrid carbon layer. The absorption pattern is over the reflective multilayer.

A mask includes a substrate, a reflective multilayer, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer is disposed over the substrate. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective multilayer and the absorption layer and in the mask black border region, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.

A mask includes a substrate, a reflective multilayer, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer is disposed over the substrate. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective multilayer and the absorption layer and in the mask black border region, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.

An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.

An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.

An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.

A grounding cap module includes a main body, a frame portion, and a cap portion. The main body includes a first opening penetrating the main body and a grounding portion disposed on a periphery of the main body and configured to be electrically grounded. The frame portion is disposed on the main body and includes a second opening aligned with the first opening. The cap portion is disposed on the frame portion and covers the second opening, wherein the first opening, the second opening and the cap portion define a receiving cavity. A gas injection device and an etching apparatus using the same are also provided.