The present disclosure provides a display substrate, a display device, a mask plate, and a manufacturing method. The manufacturing method includes forming a pattern structure on a base substrate including a first substrate portion and a second substrate portion adjacent to the first substrate portion, wherein the pattern structure is formed on the first substrate portion; forming a planarization layer on the base substrate, which includes a first planarization layer on the first substrate portion and a second planarization layer on the second substrate portion, wherein a projection of the first planarization layer on the base substrate at least partially covers that of the pattern structure on the base substrate; and removing a part of the first planarization layer to reduce a difference between a height of a surface of the first planarization layer and a height of a surface of the second planarization layer.

A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.

A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.

A mask is provided in embodiments of the disclosure, at least including: a first light transmission area provided with a first optical filter film; and a second light transmission area provided with a second optical filter film; the first optical filter film and the second optical filter film comprise respective materials through which light of different frequency ranges is optically filtered, respectively. A method for manufacturing a mask, a lithography method, a display panel, a display device, and an exposure device are further provided in embodiments of the disclosure.

A mask is provided in embodiments of the disclosure, at least including: a first light transmission area provided with a first optical filter film; and a second light transmission area provided with a second optical filter film; the first optical filter film and the second optical filter film comprise respective materials through which light of different frequency ranges is optically filtered, respectively. A method for manufacturing a mask, a lithography method, a display panel, a display device, and an exposure device are further provided in embodiments of the disclosure.

A photomask for negative-tone development (NTD) includes a main region, and a scribe lane region surrounding the main region and including a first lane and a second lane. The first and the second lane is provided at first opposite sides of each other with respect to the main region. The first lane includes a first sub-lane extending in a first direction and a second sub-lane that extending in the first direction. The first sub-lane includes a first dummy pattern and the second sub-lane includes a second dummy pattern. The first dummy pattern and the second dummy pattern are configured to radiate light exceeding a threshold dose of light to a first portion of a negative-tone photoresist provided under the first lane of the photomask.

A photomask for negative-tone development (NTD) includes a main region, and a scribe lane region surrounding the main region and including a first lane and a second lane. The first and the second lane is provided at first opposite sides of each other with respect to the main region. The first lane includes a first sub-lane extending in a first direction and a second sub-lane that extending in the first direction. The first sub-lane includes a first dummy pattern and the second sub-lane includes a second dummy pattern. The first dummy pattern and the second dummy pattern are configured to radiate light exceeding a threshold dose of light to a first portion of a negative-tone photoresist provided under the first lane of the photomask.

The present disclosure provides a photomask and a method for repairing a photomask. The photomask includes a substrate, a reflective multi-layer stack over the substrate, a capping layer over the reflective multi-layer stack, an absorber layer over the capping layer, a first patch layer in direct contact with the absorber layer, and a second patch layer over a surface of the first patch layer.

A mask is provided that includes a first graphic region and a second graphic region disposed along a first direction. The first graphic region comprises a first splicing exposure region. The second graphic region comprises a second splicing exposure region. The first splicing exposure region is used for, after being translated along a first vector, forming a first splicing auxiliary region, and the first splicing auxiliary region coincides with the second splicing exposure region.

A mask is provided that includes a first graphic region and a second graphic region disposed along a first direction. The first graphic region comprises a first splicing exposure region. The second graphic region comprises a second splicing exposure region. The first splicing exposure region is used for, after being translated along a first vector, forming a first splicing auxiliary region, and the first splicing auxiliary region coincides with the second splicing exposure region.