Provided are an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a resin (B) having a group that decomposes by the action of an alkali developer to increase the solubility in the alkali developer and having at least one of a fluorine atom or a silicon atom, and a resin (C) having a phenolic hydroxyl group, different from the resin (B), an actinic ray-sensitive or radiation-sensitive film and a mask blank, each formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.

A mask for Poisson spot suppression includes a plurality of petals equally spaced in a circular pattern, the petals comprising a gray scale lithography substrate, the substrate having an opaque center portion and a gradient of increasing transparency extending toward a perimeter of the circular pattern, the gradient effected by a gray scale lithography process.

A continuous flow projection lithography system to form microstructures using an optical array incorporated in a continuous coating process is provided. A mask is placed at a distance from the array. Each element of the array projects one image of the mask onto a substrate, effectively forming an array thereon. A coating process allows flows that can be used to define functional regions of particles or supporting layers that prevent adhesion of crosslinked polymers to surfaces.

A continuous flow projection lithography system to form microstructures using an optical array incorporated in a continuous coating process is provided. A mask is placed at a distance from the array. Each element of the array projects one image of the mask onto a substrate, effectively forming an array thereon. A coating process allows flows that can be used to define functional regions of particles or supporting layers that prevent adhesion of crosslinked polymers to surfaces.

A device includes a light source and a light guide. The light source is configured to emit photoresist-curative electromagnetic radiation. The light guide is arranged to receive the photoresist-curative electromagnetic radiation from the light source and to guide the received radiation by total internal reflection, the light guide including a pattern of emission points on at least one surface of the light guide, the emission points emitting the photoresist-curative electromagnetic radiation out of the light guide by frustration of total internal reflection caused by the emission points.

A device includes a light source and a light guide. The light source is configured to emit photoresist-curative electromagnetic radiation. The light guide is arranged to receive the photoresist-curative electromagnetic radiation from the light source and to guide the received radiation by total internal reflection, the light guide including a pattern of emission points on at least one surface of the light guide, the emission points emitting the photoresist-curative electromagnetic radiation out of the light guide by frustration of total internal reflection caused by the emission points.

The present invention relates to a method for controlling the level of defects in films obtained using a composition comprising a blend of block copolymers and polymers deposited on a surface. The polymers comprise at least one monomer identical to those present in one or other block of the block copolymers.

The present invention relates to a method for controlling the level of defects in films obtained using a composition comprising a blend of block copolymers and polymers deposited on a surface. The polymers comprise at least one monomer identical to those present in one or other block of the block copolymers.

Provided is a photolithography method, including: a) forming a photoresist layer satisfying D=m*(λ/2n) (D is a thickness of the photoresist layer, n is a refractive index of the photoresist, λ is a wavelength of irradiated light at the time of exposure, and m is a natural number of 1 or more) on a substrate; and b) manufacturing a photoresist pattern having a ring shape by exposing the photoresist layer and developing the exposed photoresist layer using a photo mask including a transparent substrate and a plate-type metal dot contacting a light emitting surface of the transparent substrate.

Methods for reducing reticle transmission differences and for optimizing layer placement for overlay in MTRs and CTRs are disclosed. Embodiments include providing a reticle having a prime area and a frame area surrounding the prime area; determining RT differences across the prime area; and providing RT adjustment structures on the reticle to decrease the RT differences. Other embodiments include grouping multiple layers of a semiconductor production flow, the layers for each group having an RT difference less than a predetermined value; and placing the layers on plural ordered reticles of a reticle set, each reticle having multiple image fields, by selecting, for each reticle, layers from a single group and optimizing placement of the layers for overlay. Other embodiments include selectively rotating image fields on a reticle having multiple image fields to improve overlay, or optimizing placement of DDLs on CTRs by placing each design orientation on a different reticle.