A lithographic method includes the step of providing a photomask with a pattern, the step of using a transparent pod to contain the photomask, the step of inserting the transparent pod in a lithographic machine, the step of using the lithograph machine to cast light onto the photomask via the transparent pod, and the step of transferring the pattern to a wafer.

A lithographic method includes the step of providing a photomask with a pattern, the step of using a transparent pod to contain the photomask, the step of inserting the transparent pod in a lithographic machine, the step of using the lithograph machine to cast light onto the photomask via the transparent pod, and the step of transferring the pattern to a wafer.

According to one embodiment, there is provided a reflection mask including a multilayer reflection film configured to reflect EUV light or soft X-rays. The reflection mask includes a periodic pattern arrangement region in which first patterns are periodically arranged, and a non-periodic pattern arrangement region in which second patterns are non-periodically arranged. The non-periodic pattern arrangement region and the periodic pattern arrangement region differ from one another in reflectivity for the EUV light or the soft X-rays.

An apparatus comprises a low EUV reflectivity (LEUVR) mask. The LEUVR mask includes a low thermal expansion material (LTEM) layer; a reflective multilayer (ML) over the LTEM layer; and a patterned absorption layer over the reflective ML. The reflective ML has less than 2% EUV reflectivity.

An apparatus comprises a low EUV reflectivity (LEUVR) mask. The LEUVR mask includes a low thermal expansion material (LTEM) layer; a reflective multilayer (ML) over the LTEM layer; and a patterned absorption layer over the reflective ML. The reflective ML has less than 2% EUV reflectivity.

The present invention provides a mask plate, relating to a field of exposure technology, which can solve the problem of an existing mask plate that a resolution is limited by an effect of diffraction. The mask plate of the invention includes: a pattern structure, including a light blocking region and a light transmitting region; and a total reflection structure provided at an light-exiting side of the pattern structure, the total reflection structure including a high refraction layer and a first low refraction layer sequentially provided in a direction away from the pattern structure and contacting each other, wherein a refractive index of the high refraction layer is greater than a refractive index of the first low refraction layer.

The present invention provides a mask plate, relating to a field of exposure technology, which can solve the problem of an existing mask plate that a resolution is limited by an effect of diffraction. The mask plate of the invention includes: a pattern structure, including a light blocking region and a light transmitting region; and a total reflection structure provided at an light-exiting side of the pattern structure, the total reflection structure including a high refraction layer and a first low refraction layer sequentially provided in a direction away from the pattern structure and contacting each other, wherein a refractive index of the high refraction layer is greater than a refractive index of the first low refraction layer.

A method for manufacturing a multilayered-reflective-film-provided substrate including a substrate and a multilayer reflective film that reflects EUV light on the substrate, the method includes performing a first defect inspection on the multilayered-reflective-film-provided substrate with a first wavelength to acquire first defect information, performing a second defect inspection on the multilayered-reflective-film-provided substrate with a second wavelength different from the first wavelength to acquire second defect information, and determining whether there is an unmatching defect and a matching defect by comparing the first defect information with the second defect information to acquire third defect information.

Provided is a substrate with multilayer reflective film used to manufacture a reflective mask having a multilayer reflective film having high reflectance with respect to exposure light and little film stress. The substrate with multilayer reflective film is provided with a multilayer reflective film for reflecting exposure light, the substrate with multilayer reflective film comprising a multilayer film obtained by building up an alternating stack of low refractive index layers and high refractive index layers on a substrate, and the multilayer reflective film contains krypton (Kr).

An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.