The inventive concept provides a mask treating apparatus. The mask treating apparatus includes a support unit configured to support and rotate a mask, the mask having a first pattern within a plurality of cells thereof and a second pattern outside regions of the plurality of cells; and a heating unit having a laser irradiator for irradiating a laser light to a specific region of the mask supported on the support unit, and a controller configured to control the support unit and the heating unit, and wherein the support unit includes: a support part for supporting the mask; and a moving stage part configured to move a position of the support part, and wherein the controller controls the moving stage part so a position of the mask supported on the support part is changed so the second pattern is positioned at the specific region.

The inventive concept provides a mask treating apparatus. The mask treating apparatus includes a support unit configured to support and rotate a mask, the mask having a first pattern within a plurality of cells thereof and a second pattern outside regions of the plurality of cells; and a heating unit having a laser irradiator for irradiating a laser light to a specific region of the mask supported on the support unit, and a controller configured to control the support unit and the heating unit, and wherein the support unit includes: a support part for supporting the mask; and a moving stage part configured to move a position of the support part, and wherein the controller controls the moving stage part so a position of the mask supported on the support part is changed so the second pattern is positioned at the specific region.

Disclosed are a photomask, an exposure apparatus, and a method of fabricating a three-dimensional semiconductor memory device using the same. The photomask may include a mask substrate, a first mask pattern on the mask substrate, and an optical path modulation substrate. The optical path modulation substrate may include a first region on a portion of the first mask pattern, and a second region on another portion of the first mask pattern. The second region has a thickness that is less than a thickness of the first region.

A glass-ceramic component is provided that has a low average coefficient of thermal expansion (CTE) and a high CTE homogeneity. The use of such a component and a process for producing such a component are also provided.

A glass-ceramic component is provided that has a low average coefficient of thermal expansion (CTE) and a high CTE homogeneity. The use of such a component and a process for producing such a component are also provided.

A substrate with a film for a reflective mask blank including a substrate, a multilayer reflection film and a back surface conductive film having a composition at the side in contact with the substrate and a different composition at the side remotest from the substrate is provided. The composition at the side in contact with the substrate contains silicon and nitrogen, as main components, and the different composition at the side remotest from the substrate contains tantalum, as a main component, and at least one element selected from the group consisting of silicon, germanium and aluminum.

A photomask blank having a substrate; and a multilayer film including a first layer, a second layer, and a third layer. The first layer contains 43 at % or less chromium, 32 at % or more oxygen, 25 at % or less nitrogen and 5 at % or more and 18 at % or less carbon and has a thickness of 8 nm or more and 16 nm or less. The second layer contains 66 at % or more and 92 at % or less chromium and 8 at % or more and 30 at % or less nitrogen and has a thickness of 50 nm or more and 75 nm or less. The third layer contains 44 at % or less chromium, 30 at % or more oxygen and 28 at % or less nitrogen and has a thickness of 10 nm or less. A surface roughness Rq of the multilayer film is 0.65 nm or less.

A photomask blank having a substrate; and a multilayer film including a first layer, a second layer, and a third layer. The first layer contains 43 at % or less chromium, 32 at % or more oxygen, 25 at % or less nitrogen and 5 at % or more and 18 at % or less carbon and has a thickness of 8 nm or more and 16 nm or less. The second layer contains 66 at % or more and 92 at % or less chromium and 8 at % or more and 30 at % or less nitrogen and has a thickness of 50 nm or more and 75 nm or less. The third layer contains 44 at % or less chromium, 30 at % or more oxygen and 28 at % or less nitrogen and has a thickness of 10 nm or less. A surface roughness Rq of the multilayer film is 0.65 nm or less.

A process for transferring a component from a release layer by exposing the release layer to light and heat from different sources is described. The process includes providing an assembly comprising a substrate, a release layer and a component, heating the release layer and exposing the release layer to an actinic wavelength of light, wherein the heating source and the actinic irradiation source are different sources.

A process for transferring a component from a release layer by exposing the release layer to light and heat from different sources is described. The process includes providing an assembly comprising a substrate, a release layer and a component, heating the release layer and exposing the release layer to an actinic wavelength of light, wherein the heating source and the actinic irradiation source are different sources.