An apparatus and method for transferring nanofiber structures (e.g., nanofiber films, nanofiber sheets, stacks of nanofiber grids, nanofiber films, nanofiber sheets, and combinations thereof) between various substrates are described. The techniques described use a soluble layer on a substrate that is subsequently dissolved, thus freeing the nanofiber structure from the substrate. This liquid phase techniques preserves the mechanical integrity and the purity of the nanofiber structures.

A pellicle demounting method includes providing a stack including a photomask, a pellicle frame, and a pellicle film that are arranged in this order, forming of a pressure-sensitive adhesive layer on the pellicle film in the stack, and a demounting step of demounting at least the pellicle film and the pressure-sensitive adhesive layer from the photomask in the stack having the pressure-sensitive adhesive layer formed thereon.

A pellicle assembly includes a pellicle membrane and a conformal coating on an outer surface of the pellicle membrane. The pellicle membrane can be formed with multiple layers and has a combination of high transmittance, low deflection, and small pore size. The conformal coating is intended to protect the pellicle membrane from damage that can occur due to heat and hydrogen plasma created during EUV exposure.

A pellicle assembly includes a pellicle membrane and a conformal coating on an outer surface of the pellicle membrane. The pellicle membrane can be formed with multiple layers and has a combination of high transmittance, low deflection, and small pore size. The conformal coating is intended to protect the pellicle membrane from damage that can occur due to heat and hydrogen plasma created during EUV exposure.

A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.

The present disclosure provides masks suitable for Extreme Ultraviolet (EUV) and X-ray lithography by including a non-reflective region combined with a reflective multilayer. This non-reflective region replaces a typical absorber layer used to provide the pattern for integrated circuits.

The present disclosure provides masks suitable for Extreme Ultraviolet (EUV) and X-ray lithography by including a non-reflective region combined with a reflective multilayer. This non-reflective region replaces a typical absorber layer used to provide the pattern for integrated circuits.

A method for manufacturing a pellicle according to the technical idea of the present invention includes preparing a support substrate, forming a catalyst layer including nickel (Ni) in which one selected from a (110) plane and a (100) plane is a dominant crystal plane, on the support substrate, and performing a chemical vapor deposition process on the catalyst layer at about 1050° C. or less to form a membrane having a graphite layer.

Provided are a pellicle film, a pellicle, an original plate for exposure, an exposure device, a method of producing a semiconductor device, and a method of producing a pellicle, the pellicle film containing carbon nanotubes having a silicon carbide layer in which at least a part of carbon is substituted with silicon at least on a surface layer side.

The purpose of the present disclosure is to provide a pellicle that has an adhesive layer having good flatness, and a method for producing the pellicle with good reproducibility. Said purpose is achieved by a pellicle having: a pellicle frame; a pellicle film provided so as to be stretched on one end surface of the pellicle frame; and an adhesive layer provided on the other end surface of the pellicle frame. The adhesive layer contains a cured product of a resin composition containing a curable polymer (A), and a curing agent (B1) and a curing agent (B2). The curing agent (B1) and the curing agent (B2) have different curing conditions.