In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.

A photo-resistor draw device includes a photo-resistor bottle, a sealing cover arranged on an inlet of the bottle, an air tube passing through the sealing cover and being inserted within the photo-resistor bottle, and a photo-resistor draw tube. The photo-resistor bottle further includes a stirring component for stirring the photo-resistors. As the novel photo-resistor draw device includes the stirring component for preventing the high-precision photo-resistor from being subsided. Not only the stability of the color filter products may be enhanced, but also the defects may be eliminated. As such, the yield rate of the products is improved.

A method of making a semiconductor device is provided for depositing, patterning, and developing photoresist (1703, 1704) on an underlying layer located on a backside of a wafer having a frontside on which an integrated circuit die are formed over a shared wafer semiconductor substrate and arranged in a grid, thereby forming a patterned photoresist mask with a unique set of one or more openings which are used to selectively etch the underlying layer to form, on each integrated circuit die, a unique die mark identifier pattern of etched openings in the underlying layer corresponding to the unique set of one or more openings in the patterned photoresist mask (1705), where the patterned photoresist mask is removed (1706) from the backside of the wafer before singulating the wafer to form a plurality of integrated circuit devices (1708) which each include a unique die marking.

In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.

The present invention provides a chemical liquid demonstrating excellent defect inhibition performance in a case where the chemical liquid is used as a prewet solution. The present invention also provides a resist pattern forming method, a semiconductor chip manufacturing method, a chemical liquid storage body, and a chemical liquid manufacturing method. The chemical liquid according to an embodiment of the present invention is a chemical liquid to be used as a prewet solution and contains cyclohexanone and one or more kinds of first compounds selected from the group consisting of a compound represented by General Formula (1), a compound represented by General Formula (2), and a compound represented by General Formula (3), in which a content of the cyclohexanone is 98.000% to 99.999% by mass with respect to a total mass of the chemical liquid, and a total content of the first compounds is 0.001 to 100 ppm by mass with respect to the total mass of the chemical liquid.

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The present disclosure describes a method for replacing a photoresist (PR) bottle using a vehicle. An exemplary vehicle includes a processor configured to receive a request signal to replace a first PR bottle. The processor is also configured to transmit an order based on the request signal. The vehicle also includes a plurality of wheels configured to move the vehicle from the first location to a second location, and from the second location to the first location. The vehicle further includes a robotic arm configured to load, at the first location, the first PR bottle into a first container; load a second PR bottle in a second container; remove a cap from the second PR bottle and a socket from the first PR bottle; couple the socket of the first PR bottle to the second PR bottle; and unload the second PR bottle from the second container.

Systems and processes for making a flexo plate, and plates made thereby. Non-printing indicia defined by areas of presence and absence of polymer in the plate floor created using microdots imaged during a LAMS layer imaging step are readable downstream of the washing or other non-cured-polymer-removal step but not to print in the printing step. The non-printing indicia may define a repeating pattern of alphanumeric characters, non-text graphics, or a combination thereof. A difference in growth of plate structures corresponding to different types of microdots may be used for characterizing processing conditions.

A method includes: storing a carrier containing material in a storage; recording environmental data of the storage to a database while the material is in the storage; generating a forecast for the material in the carrier based on the environmental data; receiving a request for the material from a semiconductor fabrication tool; and providing the carrier to the semiconductor fabrication tool based on the forecast.

A treatment solution supply apparatus for supplying a treatment solution to a substrate treatment apparatus which treats a substrate using the treatment solution, includes: an accommodating part having a plurality of compartments in each of which a storage container storing the treatment solution is installed from one side surface side; an acquirer provided for each of the compartments and configured to acquire identification information about the storage container from an identification information holder attached to a side surface of the storage container installed in the compartment corresponding thereto; and a report part provided for each of the compartments and configured to report an installation state of the storage container in the compartment based on an acquisition result by the acquirer for the corresponding compartment, by a light emitting state of a light-emitting element, the light-emitting element of the report part emitting light toward the one side surface side.

An object of the present invention is to provide a chemical liquid which makes it possible to form a thinner resist film having a uniform thickness on a substrate by using a small amount of resist composition and demonstrates excellent defect inhibition performance. Another object of the present invention is to provide a pattern forming method. A chemical liquid of the present invention contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C., in a case where the chemical liquid contains one kind of the impurity metal, a content of the impurity metal in the chemical liquid is 0.001 to 100 mass ppt, and in a case where the chemical liquid contains two or more kinds of the impurity metals, a content of each of the impurity metals in the chemical liquid is 0.001 to 100 mass ppt.