Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

A process including providing a substantially flat printed image on a substrate; disposing a curable gellant composition onto the printed image in registration with the printed image, successively depositing additional amounts of the gellant composition to create a raised image in registration with the printed image; and curing the deposited raised image. A process including providing a printed image on a substrate; disposing a curable non-gellant composition onto the printed image in registration with the printed image; and disposing a curable gellant composition onto the printed image in registration with the printed image; to create a raised image in registration with the printed image; and curing the deposited raised image. An ultraviolet curable phase change gellant composition including a radiation curable monomer or prepolymer, a photoinitiator, a silicone polymer or pre-polymer, and a gellant.

A structure stamp has a flexible stamp which has a microstructured or nanostructured stamp surface for embossing of an embossing structure which corresponds to the stamp surface on an embossing surface, and a frame for clamping the stamp. Moreover, the invention relates to a device for embossing an embossing pattern on an embossing surface with the following features: a stamp receiver for accommodating and moving a structure stamp, an embossing material receiver for accommodating and placing an embossing material opposite the structure stamp, and an embossing element drive for moving an embossing element along the structure stamp.

A heat-reactive resist material contains copper oxide, and silicon or silicon oxide, and is formed so that the content of silicon or silicon oxide in the heat-reactive resist material is 4.0 mol % or more less than 10.0 mol % in terms of mole of silicon. A heat-reactive resist layer is formed using the heat-reactive resist material, is exposed, and then, is developed with a developing solution. Using the obtained heat-reactive resist layer as a mask, dry etching is performed on a substrate with a fluorocarbon to manufacture a mold having a concavo-convex shape on the substrate surface. At this point, it is possible to control a fine pattern comprised of the concavo-convex shape.

A method of forming imprinted patterns is provided. The method may include detecting a particle located on a wafer. The method may include distributing an imprint medium material on a surface of the wafer. The method may include forming an imprint medium layer on a surface of the wafer with a template and the imprint medium material.

An imprint apparatus including a mold holding unit configured to hold a mold, an adjusting unit configured to adjust a pressure difference between a first pressure on a second surface on an opposite side of a first surface on which a pattern of the mold held by the mold holding unit is formed and a second pressure in a first space between a substrate and the first surface of the mold, and a control unit configured to control an imprint process, wherein the imprint process includes a separation process of separating the mold from a pattern made of a cured product of an imprint material on the substrate, and the control unit controls, in the separation process, the adjustment of the pressure difference by the adjusting unit so that the first pressure is smaller than the second pressure.

In certain exemplary embodiments of the present invention, three-dimensional micro-mechanical devices and/or micro-structures can be made using a production casting process. As part of this process, an intermediate mold can be made from or derived from a precision stack lamination and used to fabricate the devices and/or structures. Further, the micro-devices and/or micro-structures can be fabricated on planar or nonplanar surfaces through use of a series of production casting processes and intermediate molds. The use of precision stack lamination can allow the fabrication of high aspect ratio structures. Moreover, via certain molding and/or casting materials, molds having cavities with protruding undercuts also can be fabricated.

A method for manufacturing a microfluidic device includes following steps. A mold made of a glass material is provided. The mold has at least one hollow mold cavity and at least one blocking wall around the hollow mold cavity. The mold is disposed on a silicon substrate, which includes a formation surface corresponding to the hollow mold cavity and a microfluidic male mold protruding from the formation surface. Polydimethylsiloxane (PDMS) is poured into the hollow mold cavity and baked to harden the PDMS to form the microfluidic device. The microfluidic device has a microfluidic structure corresponding to the microfluidic male mold, and a height of a sidewall of the microfluidic device is between 3 mm and 30 mm. With the glass material of the mold, the microfluidic device having a sidewall height greater than 3 mm can be manufactured, preventing an insufficient suction force of a negative pressure.

The present application relates to a film mask comprising: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and groove portions provided in a region where the darkened light-shielding pattern layer is not provided, a method for manufacturing the same, a method for forming a pattern by using the same, and a pattern manufactured by using the same.

A heat-reactive resist material contains copper oxide, and silicon or silicon oxide, and is formed so that the content of silicon or silicon oxide in the heat-reactive resist material is 4.0 mol % or more less than 10.0 mol % in terms of mole of silicon. A heat-reactive resist layer is formed using the heat-reactive resist material, is exposed, and then, is developed with a developing solution. Using the obtained heat-reactive resist layer as a mask, dry etching is performed on a substrate with a fluorocarbon to manufacture a mold having a concavo-convex shape on the substrate surface. At this point, it is possible to control a fine pattern comprised of the concavo-convex shape.