A mask pattern for forming the semiconductor structure is provided. The mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction. The second mask pattern includes a plurality of second target patterns, and the plurality of second target patterns are arranged along the first direction. When the first mask pattern overlaps the second mask pattern, one of the plurality of first target patterns partially overlaps a corresponding one of the plurality of second target patterns.

A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

The subject matter of the present invention is a device for guiding cell migration comprising a substrate having a textured surface intended to be brought into contact with cells, said textured surface having an anisotropic three-dimensional structure consisting of a network of projections inclined relative to the normal to the plane formed by said textured structure, in the direction imparted by said anisotropic structure. The invention also concerns, according to another aspect, a method for guiding cell migration including the bringing into contact of cells with a substrate having a textured surface and an anisotropic three-dimensional structure, said structure consisting of projections inclined as previously described. The device or method according to the invention can in particular be applied in the fields of dermatology, implantology and tissue engineering.

In one embodiment, a mask set for use in fabricating thin film tunneling devices includes a first photomask configured to form bottom electrodes of the devices, the first photomask comprising a first alignment mark including multiple corner markers, and a second photomask configured to form a continuous top layer of the devices, the second photomask comprising a second alignment mark including a corner marker configured to be aligned with one of the corner markers of the first photomask, wherein a degree of overlap between the bottom electrodes and the continuous top layer depends upon the corner marker of the first photomask with which the corner marker of the second photomask aligns.

The present invention is a substrate for a display, the substrate having a film B including a polysiloxane resin on at least one surface of a film A including a polyimide resin, wherein the film B contains inorganic oxide particles therein, and the present invention has an object to provide a substrate for a display: being able to be applied to a color filter, an organic EL element, or the like without the need to carry out any complex operations; allowing high-definition displays to be manufactured; and being provided with a low CTE, a low birefringence, and flexibility.

In at least one embodiment of a method for forming a pattern having a hollow structure, a light-absorbing layer capable of absorbing light is formed on a surface of a photosensitive resin film. Subsequently, a substrate having a protrusion and the photosensitive resin film are bonded together so that the protrusion and the light-absorbing layer come into contact with each other. Then, the photosensitive resin film and the light-absorbing layer are patterned at one time by photolithography.

A substrate and manufacturing method therefor, a display panel, and a display device. The substrate comprises a substrate base; and a first organic film and a second organic film which are located on the substrate base, wherein the first organic film and second organic film are used as a flat layer, and the refractive index of the first organic film is different from that of the second organic film. The first organic film and the second organic film are constructed such that after incident light obliquely incident on the substrate passes through the first organic film and the second organic film, emergent light of the incident light is deflected to the direction away from the substrate.

A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.

A method for manufacturing a biosensor includes forming an electrode layer on a flexible foil. An adhesive layer is positioned on the foil layer, and a first photo-definable hydrogel membrane is positioned over the electrode layer and the adhesive layer. A second photo-definable hydrogel membrane with an immobilized bio-recognition element is positioned over the first hydrogel membrane in contact with the electrode layer through an opening in the first hydrogel membrane.

A method for patterning a substrate is described. The patterning method includes receiving a first patterned layer overlying a material layer to be etched on a substrate, wherein the first patterned layer is composed of a resist material having (i) material properties that provide lithographic resolution of less than about 40 nanometers when exposed to extreme ultraviolet radiation lithography, and (ii) material properties that provide a nominal etch resistance to an etch process condition. The first patterned layer is over-coated with an image reversal material such that the image reversal material fills and covers the first patterned layer. The patterning method further includes removing an upper portion of the image reversal material such that top surfaces of the first patterned layer are exposed, and removing the first patterned layer such that the image reversal material remains resulting in a second patterned layer.