A substrate is provided with a patterned layer, for example, a photo resist layer, which may exhibit line roughness. In one exemplary embodiment, the patterned layer may be an extreme ultraviolet (EUV) photo resist layer. In one method, selective deposition of additional material is provided on the EUV photo resist layer after patterning to provide improved roughness and lithographic structure height to allow for more process margin when transferring the pattern to a layer underlying the photo resist. The additional material is deposited selectively thicker in areas above the photo resist than in areas where the photo resist is not present, such as exposed areas between the photo resist pattern. Pattern transfer to a layer underlying the photo resist may then occur (for example via an etch) while the patterned photo resist and additional material above the photo resist may collectively operate as an etch mask.

An example resin composition includes an epoxy resin matrix, a first photoacid generator, and a second photoacid generator. The first photoacid generator includes an anion having a molecular weight less than about 250 g/mol. The second photoacid generator includes an anion having a molecular weight greater than about 300 g/mol. In an example, i) a cation of the first photoacid generator has, or ii) a cation of the second photoacid generator has, or iii) the cations of the first and second photoacid generators have a mass attenuation coefficient of at least 0.1 L/(g*cm) at a wavelength of incident light to cure the resin composition.

A black light-shielding photosensitive resin composition, a black matrix, a black light-shielding film, a frame, and a filling material for a splicing area are provided. The black light-shielding photosensitive resin composition includes a resin (A), a pigment (B), a monomer (C), an initiator (D), and a solvent (E). The resin (A) includes an epoxy resin (A-1) and a resin (A-2) having an ethylenic unsaturated functional group. The pigment (B) includes black particles (B-1) and hollow particles (B-2).

A resist underlayer film that exhibits removability and preferably solubility only in wet etching reagent solutions, while exhibiting good resistance to resist developers that are resist solvents or aqueous alkali solutions. The composition for forming a resist underlayer film includes a dicyanostyryl group-bearing polymer (P) or dicyanostyryl group-bearing compound (C) and includes solvent, and does not contain a protonic acid curing catalyst and does not contain an alkylated aminoplast crosslinking agent derived from melamine, urea, benzoguanamine, or glycoluril.

An organically modified metal oxide nanoparticle includes a core, a first modification group, and a second modification group. The core includes a plurality of metal atoms and a plurality of oxygen atoms bonded to the plurality of metal atoms. The first modification group is a saturated carboxylic acid/carboxylate ligand coordinated to the core. The second modification group is coordinated to the core, and is an inorganic anion having a smaller size than the first modification group and/or a saturated carboxylic acid/carboxylate ligand having a smaller molecular weight than the first modification group.

Provided are a photosensitive composition including a coloring material, a resin, a polymerizable compound, a photopolymerization initiator, and a solvent A, in which the solvent A includes a solvent A1 in which a surface tension at 25° C. is 28.0 mN/m or more, a viscosity at 25° C. is 5.0 mP.Math.s or less, and a boiling point is 160° C. or higher, and a content of the solvent A1 in a total amount of the solvent A is 15% by mass or more; a method for forming a pixel formed of the photosensitive composition; a method for manufacturing an optical filter; a method for manufacturing a solid-state imaging element; and a method for manufacturing an image display device.

A resist composition containing a base material component and a compound represented by General Formula (d0), in which in the formula, Rd.sup.0 represents a condensed cyclic group containing a condensed ring containing at least one aromatic rings, the condensed cyclic group having, as a substituent, an acid decomposable group which is decomposed under action of acid to form a polar group, Yd.sup.0 represents a divalent linking group or a single bond, M.sup.m+ represents an m-valent organic cation, and m represents an integer of 1 or more

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A photosensitive resin composition comprising (A) a silicone resin comprising recurring units having formula (a1) and recurring units having formula (b1), (B) a filler, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which can be processed into a fine pattern in thick film form, has improved film properties like crack resistance, and is reliable as protective film. ##STR00001##

The present specification relates to a compound represented by Chemical Formula 1, a photoresist fluorescent resin composition including the same, and a color conversion film, a backlight unit and a display apparatus manufactured using the same.

A manufacturing method for semiconductor device comprises the steps of: forming a ridge on the surface of an InP substrate; applying a photoresist to the surface of the InP substrate so as to cover the ridge; exposing through a mask an area of the photoresist covering part of an electrode contact layer at the top of the ridge, to form a resist pattern by development; applying a shrink material so as to cover resist pattern defects occurred when forming the resist pattern; forming a crosslinked portion in the defects to repair them by reacting the shrink material with an acid remaining at the exposed interface of the resist pattern; and removing by etching an electrode contact layer exposed from the resist pattern having the repaired defects after stripping away an unreacted shrink material, thereby to obtain a desired processed shape.