G03F7/004

Squarylium dye and composition containing same

A squarylium dye [A] that has high invisibility, i.e., exhibits low absorption in the visible light region (400 nm to 750 nm), has excellent near-infrared absorption capability and high light resistance, tends not to exhibit aggregations, and has specific X-ray diffraction peaks; and an image-forming material and the like containing the squarylium dye [A] having said characteristics. The problem is solved by a squarylium dye [A] having specific X-ray diffraction peaks represented by general formula (1). Moreover, the problem is also solved by various materials containing the squarylium dye [A].

Mirror device, scanning laser device and scanning display including same mirror device, and method for manufacturing mirror device

A mirror device includes a frame body, a shaft member provided inside the frame body and connected to the frame body at both end portions, and a reflection member fixed to the shaft member and provided so as to be capable of swinging around an axis of the shaft member. The reflection member has a base portion provided along an axial direction of the shaft member and a reflection portion provided on the base portion. The base portion has a three-dimensional uneven structure including a bottom wall portion having a main surface provided along the axial direction of the shaft member and a plurality of side wall portions extending from the bottom wall portion on the side opposite to the reflection portion.

SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING ORGANIC GROUP HAVING AMMONIUM GROUP

A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane, wherein the hydrolyzable silane contains a hydrolyzable silane of Formula (1):


R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)   Formula (1)

wherein R.sup.1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond; R.sup.2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, an acyloxyalkyl group, or an organic group having an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, a hydroxyl group, an alkoxy group, an ester group, a sulfonyl group, or a cyano group, or any combination of these groups, and is bonded to a silicon atom via an Si—C bond; R.sup.1 and R.sup.2 are optionally bonded together to form a ring structure; R.sup.3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3; and the hydrolysis condensate contains an organic group having a salt structure formed between a counter anion derived from a nitric acid and a counter cation derived from a primary ammonium group, a secondary ammonium group, or a tertiary ammonium group.

PHOTORESIST RESIN, METHOD FOR PRODUCING PHOTORESIST RESIN, PHOTORESIST RESIN COMPOSITION, AND METHOD FOR FORMING PATTERN
20220372188 · 2022-11-24 · ·

Provided is a resin that exhibits high resist performance because a poorly soluble component with respect to a resist solvent is reduced, and a production method for the resin. Disclosed is a photoresist resin containing an acrylic resin, in which when the photoresist resin is dissolved in propylene glycol monomethyl ether acetate in such a way that a resin solid content concentration is 5 wt %, a polystyrene equivalent turbidity measured using a method described in “Drinking Water Testing Methods” of Japan Water Works Association of 2003, Ministry of Health, Labor and Welfare Ordinance No. 261 of Japan is 30 or less.

PHOTORESIST RESIN, METHOD FOR PRODUCING PHOTORESIST RESIN, PHOTORESIST RESIN COMPOSITION, AND METHOD FOR FORMING PATTERN
20220372188 · 2022-11-24 · ·

Provided is a resin that exhibits high resist performance because a poorly soluble component with respect to a resist solvent is reduced, and a production method for the resin. Disclosed is a photoresist resin containing an acrylic resin, in which when the photoresist resin is dissolved in propylene glycol monomethyl ether acetate in such a way that a resin solid content concentration is 5 wt %, a polystyrene equivalent turbidity measured using a method described in “Drinking Water Testing Methods” of Japan Water Works Association of 2003, Ministry of Health, Labor and Welfare Ordinance No. 261 of Japan is 30 or less.

BISPHENOL A DERIVATIVE, PREPARATION METHOD THEREFOR AND USE THEREOF IN PHOTOLITHOGRAPHY

A bisphenol A derivative, a preparation method therefor and use thereof in photolithography are provided. The compounds feature simple molecular structure, controllable molecular weight, simple synthesis steps, and relatively high thermal stability. They do not precipitate during baking and are not easily denatured during photolithography. The negative molecular glass photoresists have good film-forming property, high thermal stability, less proneness to properties varying during storage, and low viscosity, no need for additional solvents for dilution during use. After exposure at UV wavelength of 365 nm, the exposed pattern shows high contrast, excellent resolution and good sensitivity, and can present the lithographic line width of 3.5 μm.

SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN

Provided are a salt capable of producing a resist pattern with satisfactory CD Uniformity (CDU), an acid generator, and a resist composition. Disclosed are a salt represented by formula (I), an acid generator, and a resist composition:

##STR00001##

wherein, in formula (I), R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8 and R.sup.9 each represent a halogen atom, a haloalkyl group, etc.; A.sup.1, A.sup.2 and A.sup.3 each represent a hydrocarbon group, etc.; m1 and m4, m5, m6 and m7 represent an integer of 0 to 5, m2, m3, m8 and m9 represent an integer of 0 to 4, 0≤m1+m7≤5, 0≤m2+m8≤4, 0≤m3+m9≤4, and at least one of m1, m2 and m3 represents an integer of 1 or more; X.sup.4 represents a single bond, —CH.sub.2—, —O—, —S—, —CO—, —SO— or —SO.sub.2—; and AI.sup.− represents an organic anion.

Lithographic printing plate precursor, method for producing lithographic printing plate, polymer particle, and composition
11590751 · 2023-02-28 · ·

A lithographic printing plate precursor has an image-recording layer on a hydrophilic support, wherein the image-recording layer includes a polymer particle including an addition polymerization resin having a hydrophilic structure and a crosslinking structure. A method for producing a lithographic printing plate uses the lithographic printing plate precursor. A polymer particle includes an addition polymerization resin having a hydrophilic structure and a crosslinking structure. A composition includes the polymer particle.

Radiation-sensitive composition and resist pattern-forming method

A radiation-sensitive composition contains: a polymetalloxane including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. In the following formula (1), M represents a germanium atom, a tin atom or a lead atom; Ar.sup.1 represents a substituted or unsubstituted aryl group having 6 to 20 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms; R.sup.1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydrogen atom, a halogen atom or a hydroxy group; and n is 2 or 3. ##STR00001##

Method and apparatus for multi-spray RRC process with dynamic control

A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.