G03F7/004

BINDER RESIN, NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, AND DISPLAY DEVICE COMPRISING BLACK BANK FORMED USING SAME

The present application relates to a binder resin including a compound represented by Formula 1-1 and a compound represented by the following Formula 1-2, a negative-type photosensitive resin composition, and a display device including a black bank formed by using the same.

METHOD OF FORMING PATTERNED STRUCTURES

Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include gas-phase formation of a layer comprising an oxalate compound on a surface of the substrate. Portions of the layer comprising the oxalate compound can be exposed to radiation or active species that form exposed and unexposed portions. Material can be selectively deposed onto the exposed or the unexposed portions.

Chemically-amplified-type negative-type photoresist composition

The present invention relates to a chemically-amplified-type negative photoresist composition, and more particularly to a chemically-amplified-type negative photoresist composition suitable for use in a semiconductor process, which includes a specific organic acid additive, thereby improving a processing margin in a short-wavelength exposure light source compared to conventional negative photoresists.

Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, method of manufacturing electronic device, compound, and resin

An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (1). A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, ##STR00001## in Formula (1), Z represents a halogen atom, a group represented by R.sub.11OCH.sub.2—, or a group represented by R.sub.12OC(═O)CH.sub.2—. R.sub.11 and R.sub.12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

PHOTORESIST COMPOSITION AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
20220365427 · 2022-11-17 ·

A method for manufacturing a semiconductor device includes forming a resist layer including a resist composition over a substrate. The resist composition includes: a metal, a ligand, and a solvent. The solvent is mixture of a first solvent having a vapor pressure of at least 0.75 kPa, wherein the first solvent is one or more of an ether, an ester, an alkane, an aldehyde, or a ketone, and a second solvent different from the first solvent. Alternatively, the solvent is a third solvent, wherein the third solvent is a C4-C14 tertiary alcohol. The resist layer is patterned.

PHOTORESIST MATERIALS AND ASSOCIATED METHODS
20220365428 · 2022-11-17 ·

Photoresist materials described herein may include various types of tin (Sn) clusters having one or more types of ligands. As an example, a photoresist material described herein may include tin clusters bearing two or more different types of carboxylate ligands. As another example, a photoresist material described herein may include tin oxide clusters that include carbonate ligands. The two or more different types of carboxylate ligands and the carbonate ligands may reduce, minimize, and/or prevent crystallization of the photoresist materials described herein, which may increase the coating performance of the photoresist materials and may decrease the surface roughness of photoresist layers formed using the photoresist materials described herein.

Positive resist composition and patterning process
11586110 · 2023-02-21 · ·

A positive resist composition comprising a base polymer comprising recurring units (a) of an ammonium salt of a carboxylic acid having an iodized or brominated hydrocarbyl group and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group has a high sensitivity and resolution and forms a pattern of good profile with reduced edge roughness and improved dimensional uniformity.

Multifunctional polymers

A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

Photosensitive resin composition, transfer film, decorative pattern, and touch panel

Provided are a photosensitive resin composition including: a binder; a polymerizable monomer; a polymerization initiator; a pigment; and a solvent, in which the polymerizable monomer includes a difunctional polymerizable monomer having a molecular weight equal to or smaller than 500, and a content of the difunctional polymerizable monomer having a molecular weight equal to or smaller than 500 is equal to or greater than 50% by mass with respect to a total mass of the polymerizable monomer, a transfer film, a decorative pattern, and a touch panel.

Ablation layer, photosensitive resin structure, method for producing relief printing plate using said photosensitive resin structure
11500287 · 2022-11-15 · ·

An ablation layer for a photosensitive resin for a relief printing plate, the ablation layer containing at least an acid-modified polymer and an infrared-absorbing agent and having a layer acid value as defined below of 2 mg KOH/g or more and 400 mg KOH/g or less, and a neutralized salt ratio as defined below of 0.9 or less, wherein the Layer acid value=(Acid value of the acid-modified polymer)×(Mass ratio of the acid-modified polymer to an entire ablation layer); and wherein the Neutralized salt ratio=(Number of moles of polymer wherein acid in the acid-modified polymer exists in neutralized salt state)/(Total number of moles of the acid-modified polymer).