A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I):

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wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution. The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

The present invention relates to a chemically amplified photoresist composition including an alkali-soluble resin including a (meth)acrylate-based resin containing a (meth)acrylate-based repeating unit in which a heterocyclic compound is substituted via a divalent functional group containing an alkylene sulfide having 1 to 20 carbon atoms.

Hydrophobic, tough, photoimageable, functionalized polyimide formulations have been discovered that can be UV cured and developed in cyclopentanone. The present invention formulations can be used as passivation and redistribution layers with patterning provided by photolithograph, for the redistribution of I/O pads on fan-out RDL applications. The curable polyimide formulations reduce stress on thin wafers, when compared to conventional polyimide formulations, and provide low modulus, hydrophobic solder mask. These materials can serve as protective layers in any applications in which a thin, flexible, and hydrophobic polymer is required, that also has high tensile strength and high elongation at break.

The present invention provides a negative tone photosensitive composition for EUV light, capable of forming a pattern, in which occurrence of missing defects is suppressed and pattern collapse is suppressed. The present invention also provides a pattern forming method and a method for manufacturing an electronic device. The negative tone photosensitive composition for EUV light of an embodiment of the present invention includes a resin A having a repeating unit having an acid-decomposable group with a polar group being protected with a protective group that is eliminated by the action of an acid, and a photoacid generator, in which a ClogP value of the resin after elimination of the protective group from the resin A is 1.4 or less, a value x calculated by Expression (1) is 1.2 or more, and the value x calculated by Expression (1) and a value y calculated by Expression (2) satisfy a relationship of Expression (3).

Provided is a resist composition which contains a resin (A) and a solvent (B) that contains a compound (B1) represented by general formula (b-1), wherein the content of the active ingredients based on the total amount of the resist composition is 45% by mass or less.

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(In formula (b-1), R.sup.1 represents an alkyl group having from 1 to 10 carbon atoms.)

A holographic recording medium composition comprising component (e): a compound having an isocyanate group or an isocyanate-reactive functional group and further having a nitroxyl radical group, wherein component (e) contains component (e-1) below: component (e-1): a compound having a heterobicyclic ring structure or a heterotricyclic ring structure, the heterobicyclic ring structure or the heterotricyclic ring structure being obtained by replacing a carbon atom in a bicyclic ring structure or a tricyclic ring structure by the nitroxyl radical group.

An organic EL display device including a substrate, and a planarization layer, a first electrode, a pixel division layer, a light emitting pixel and a second electrode formed on the substrate, wherein the planarization layer and/or the pixel division layer contain(s) zirconium nitride particles, and a crystallite size of the zirconium nitride particles determined from a half width of a peak derived from a (111) plane in an X-ray diffraction spectrum using a CuKα ray as an X-ray source is 5 nm or more 20 nm or less. Provided are an organic EL display device with excellent visibility and fewer display defects, and a cured film which is excellent in storage stability of a photosensitive resin composition capable of being applied on an insulating layer of the organic EL display device, and which has high sensitivity and high visible light-shielding property and is also free from residue in the opening.

Provided are: a new sulfonium salt highly photosensitive to active energy ray, in particular, i-line or h-line; and a new photoacid generator which is highly photosensitive to i-line or h-line, and comprises a sulfonium salt that is highly soluble in a solvent and a cationically polymerizable compound such as an epoxy compound, and has excellent storage stability in the formulation. The present invention pertains to a sulfonium salt represented by general formula (1), and a photoacid generator comprising said sulfonium salt.

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Provided are a coloring composition including a colorant and a resin, in which the colorant includes a pigment A having a structure represented by Formula (X1), and the resin includes at least one selected from a polyimide resin, a polyimide precursor, a polybenzoxazole resin, a polybenzoxazole precursor, or a polysiloxane resin; a film obtained from the coloring composition; and an optical filter, a solid-state imaging element, and an image display device including the film.

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