A new photosensitive resin composition based on a polysiloxane, that is, a negative photosensitive resin composition is provided. A negative photosensitive resin composition includes (A) a polysiloxane compound containing a first structural unit represented by the following general formula (1), (B) a photoinduced curing accelerator, and (C) a solvent.

[(R.sup.x).sub.bR.sup.1.sub.mSiO.sub.n/2]  (1)

Provided are a coloring composition including a colorant, a first resin including a repeating unit represented by Formula (b-10), and a second resin different from the first resin, in which the second resin is at least one selected from a polyimide precursor, a polyimide resin, a polybenzoxazole precursor, a polybenzoxazole resin, or a polysiloxane resin; a film formed of the coloring composition; an optical filter; a solid-state imaging element; and an image display device. In Formula (b-10), Ar.sup.10 represents a group including an aromatic carboxyl group, L.sup.11 represents —COO— or —CONH—, L.sup.12 represents a trivalent linking group, and P.sup.10 represents a polymer chain.

##STR00001##

An object of the present invention is to provide a pattern forming method with which a pattern having excellent resolution performance and LER performance can be formed. In addition, another object of the present invention is to provide a method for manufacturing an electronic device, an actinic ray-sensitive or radiation-sensitive resin composition, and a resist film.

A pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, an exposing step of exposing the resist film, and a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including two or more ion pairs which are decomposed by an irradiation with an actinic ray or a radiation and having a molecular weight of 5,000 or less, and a solvent.

Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

A salt represented by formula (I): ##STR00001##
wherein Q.sup.1 and Q.sup.2 each independently represent a fluorine atom or a C.sub.1 to C.sub.6 perfluoroalkyl group, R.sup.1 and R.sup.2 each independently represent a hydrogen atom, a fluorine atom or a C.sub.1 to C.sub.6 perfluoroalkyl group, z represents an integer of 0 to 6, X.sup.1 represents *—O—, *—CO—O— or *—O—CO—, * represents a binding site to CR.sup.1R.sup.2 or CQ.sup.1Q.sup.2, L.sup.1 represents a C.sub.1 to C.sub.6 alkanediyl group, R.sup.3 represents a C.sub.5 to C.sub.18 alicyclic hydrocarbon group in which a hydrogen atom may be replaced by a hydroxy group, and in which a methylene group may be replaced by an oxygen atom or a carbonyl group, and which alicyclic hydrocarbon group may have a cyclic ketal structure optionally having a fluorine atom; and Z.sup.+ represents an organic cation.

A siloxane polymer comprising polysiloxane, silphenylene, isocyanuric acid, and polyether skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the siloxane polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency and light resistance.

The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: ##STR00001## wherein R.sup.1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R.sup.2 to R.sup.5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R.sup.2 to R.sup.5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.5 are each independently an integer of 0 to 9, provided that m.sup.2, m.sup.3, m.sup.4, and m.sup.5 are not 0 at the same time; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.

A lithographic printing plate precursor including an image recording layer containing an infrared absorber represented by Formula I, on a support, and a method of producing a lithographic printing plate and a lithographic printing method using the lithographic printing plate precursor. ##STR00001##

A lithographic printing plate precursor including an image recording layer containing an infrared absorber represented by Formula I, on a support, and a method of producing a lithographic printing plate and a lithographic printing method using the lithographic printing plate precursor. ##STR00001##

A positive-type photosensitive resin composition comprises a (a) polybenzoxazole precursor, a (b) crosslinking agent, a (c) photosensitive agent, and a (d) solvent, wherein the (a) component comprises a structural unit represented by Formula (1) below, and the (b) component is a compound represented by Formula (2) below. In Formula (1), U is a bivalent organic group, a single bond, —O—, or —SO.sub.2—, V is a group comprising an aliphatic structure, and the carbon number in the aliphatic structure is 1 to 30. In Formula (2), R.sub.1 is independently a hydrogen atom or a group represented by —CH.sub.2—O—R.sub.2. At least one of the plurality of R.sub.1s is a group represented by —CH.sub.2—O—R.sub.2. R.sub.2 is independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. ##STR00001##