An object of the present invention is to provide a chemical liquid supply method capable of reducing the content of impurities in a chemical liquid. Another object of the present invention is to provide a pattern forming method.

The chemical liquid supply method according to an embodiment of the present invention is a chemical liquid supply method of supplying a chemical liquid containing an organic solvent through a pipe line that an apparatus for semiconductor devices comprises, the chemical liquid supply method having a gas pumping step of sending the chemical liquid by pressurization using a gas, in which a moisture content in the gas is 0.00001 to 1 ppm by mass with respect to a total mass of the gas.

Provided are patterned films comprising nanostructures and one or more UV-cured monomers. Also provide are methods of making the patterned films, and electroluminescent devices comprising the patterned films.

An on-machine development lithographic printing plate precursor includes an image-recording layer on an aluminum support having an anode oxide film, wherein an end portion of the lithographic printing plate precursor has a shear droop shape, the image-recording layer contains a compound having a support adsorptive property, having a molecular weight of 1,000 or less, and not having an unsaturated double bond group in a molecule, and a content of the compound is substantially the same in a plane of the image-recording layer.

A photoacid generator (PAG) anion, a photoresist composition, and a method are disclosed. The PAG anion includes a moiety, selected from an alkyl group, a monocyclic aromatic group, and a bicyclic aromatic group, that includes a carbon atom with a negative elementary charge. The PAG anion also includes an electron acceptor atom, selected from boron(III), aluminum(III), and phosphorus(V), which is covalently bonded to the carbon atom. The PAG anion also has at least one electron-withdrawing R group. The photoresist composition has a PAG that includes the PAG anion and a cation selected from triphenylsulfonium, diphenyliodonium, phenylthiolanium, and derivatives thereof. The method includes forming a layer of the photoresist composition over a material surface on a substrate, irradiating the layer to form a pattern of radiation-exposed regions, selectively removing portions of the irradiated layer to form exposed portions of the material surface, and etching or ion implanting the exposed portions.

A novel onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in exposure latitude, MEF, and LWR. ##STR00001##

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more,
A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)  Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

A resist composition including a compound represented by formula (bd1), a total amount of the acid-generator component and the basic component being 20 to 70 parts by weight, relative to 100 parts by weight of the base material component. In the formula, Rx.sup.1 to Rx.sup.4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rx.sup.1 to Rx.sup.4 may be mutually bonded to form a ring structure; Ry.sup.1 and Ry.sup.2 represents a hydrogen atom or a hydrocarbon group, or Ry.sup.1 and Ry.sup.2 may be mutually bonded to form a ring structure; Rz.sup.1 to Rz.sup.4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rz.sup.1 to Rz.sup.4 may be mutually bonded to form a ring structure; provided that at least one of Rx.sup.1 to Rx.sup.4, Ry.sup.1, Ry.sup.2 and Rz.sup.1 to Rz.sup.4 has an anionic group; and M.sup.m+ represents an m-valent organic cation). ##STR00001##

A resist composition including: a base material component (A), a compound (B1) represented by Formula (b1-1), and a fluorine additive component (F) which contains a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (b1-1), V.sup.b01 represents a fluorinated alkylene group, R.sup.b02 represents a fluorine atom or a hydrogen atom, a total number of fluorine atoms as V.sup.b01 and R.sup.b02 is 2 or 3; in Formula (f-1), Rf.sup.1 represents a monovalent organic group having a fluorine atom; in Formula (f-2), Rf.sup.2 represents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group. ##STR00001##

A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: ##STR00001##
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.