A method for producing a fluorine-containing compound represented by General formula (1), wherein X represents a halogen atom or an alkoxy group, R.sup.1 represents a hydrogen atom or a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms, R.sup.f1 and R.sup.f2 are each independently a fluorinated alkoxy group, and n represents an integer of 0 or more. ##STR00001##

A polymer compound is provided which is changed from a water-insoluble state to a water-soluble state by irradiation with light. The polymer compound is represented by Formula (5), where A and B are a single bond or a functional group, R.sup.3, R.sup.4, and R.sup.9 are hydrogen or an alkyl group, and R.sup.6 and R.sup.7 are hydrogen, an alkyl group, or the like.

A lithographic printing plate precursor having an image-recording layer on a hydrophilic support, in which the image-recording layer includes an organic polymer particle, and the organic polymer particle is a reaction product obtained by at least reacting an aromatic polyvalent isocyanate compound having a structure represented by Formula PO and water, a method for making a lithographic printing plate having excellent printing resistance in the case of using an ultraviolet-curable ink in printing, a new organic polymer particle, and a resin composition including the organic polymer particle. ##STR00001##

A device (100) includes a light source (130) and a light guide (110). The light source (130) is configured to emit photoresist-curative electromagnetic radiation. The light guide (110) is arranged to receive the photoresist-curative electromagnetic radiation from the light source (130) and to guide the received radiation by total internal reflection, the light guide (110) including a pattern of emission points (210) on at least one surface of the light guide (110), the emission points (210) emitting the photoresist-curative electromagnetic radiation out of the light guide (110) by frustration of total internal reflection caused by the emission points (210).

A device (100) includes a light source (130) and a light guide (110). The light source (130) is configured to emit photoresist-curative electromagnetic radiation. The light guide (110) is arranged to receive the photoresist-curative electromagnetic radiation from the light source (130) and to guide the received radiation by total internal reflection, the light guide (110) including a pattern of emission points (210) on at least one surface of the light guide (110), the emission points (210) emitting the photoresist-curative electromagnetic radiation out of the light guide (110) by frustration of total internal reflection caused by the emission points (210).

A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.

A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.

The present application discloses a method for measuring critical dimension. The method for measuring critical dimension includes providing a substrate; forming a resist layer over the substrate; monitoring a volatile byproduct evolved from the resist layer to obtain a first amount of the volatile byproduct; exposing the resist layer to a radiation source; heating the resist layer; monitoring the volatile byproduct evolved from the resist layer to obtain a second amount of the volatile byproduct; and deducting the critical dimension according to a difference between the first amount of the volatile byproduct and the second amount of the volatile byproduct.

The present application discloses a method for measuring critical dimension. The method for measuring critical dimension includes providing a substrate; forming a resist layer over the substrate; monitoring a volatile byproduct evolved from the resist layer to obtain a first amount of the volatile byproduct; exposing the resist layer to a radiation source; heating the resist layer; monitoring the volatile byproduct evolved from the resist layer to obtain a second amount of the volatile byproduct; and deducting the critical dimension according to a difference between the first amount of the volatile byproduct and the second amount of the volatile byproduct.

Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer: ##STR00001##
A.sub.1, A.sub.2, L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A.sub.3 is C6-C14 aromatic, wherein A.sub.3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R.sub.1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; R.sub.f is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1.