A storage container includes: a sidewall portion, a seal portion and a movable member. The sidewall portion, the seal portion and the movable member define an accommodation space. The seal portion is adapted to seal a top of the sidewall portion, and the seal portion is provided with a hole communicated with the accommodation space. The movable member is adapted to seal a bottom of the sidewall portion, and further adapted to move up and down in parallel to a direction of the bottom of the sidewall portion pointing to the top. The movable member is configured to connect a control device. The control device controls the movable member to move up and down in a direction of the bottom of the sidewall portion pointing to the top.

A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate While spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.

A method for forming a semiconductor device is provided. The method includes applying a photoresist composition over a substrate, thereby forming a photoresist layer over the substrate; performing a first baking process to the photoresist layer; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation, thereby forming a pattern therein; performing a second baking process to the photoresist layer; and developing the photoresist layer having the pattern therein using a developer, thereby forming a patterned photoresist layer. The first baking process and the second baking process are conducted under an ambient atmosphere having a humidity level ranging from 55% to 100%.

Provided is a substrate hydrophilizing agent that improves the wettability of a substrate surface with respect to a photoresist. A substrate hydrophilizing agent of the present invention is an agent for hydrophilizing a surface of a substrate on which a pattern is formed through photolithography, and contains at least the following Component (A) and Component (B). Component (A): a water-soluble oligomer having a weight average molecular weight from 100 to less than 10000. Component (B): water. The water-soluble oligomer of Component (A) is preferably a compound represented by the following Formula (a-1):
R.sup.a1O—(C.sub.3H.sub.6O.sub.2).sub.n—H  (a-1)
(where R.sup.a1 represents a hydrogen atom, a hydrocarbon group which may have a hydroxyl group, or an acyl group; and n is an integer from 2 to 60.)

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): ##STR00001##
wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

A salt capable of producing a resist pattern with excellent line edge roughness is represented by formula (I): ##STR00001##
wherein, R.sup.1 represents —(X.sup.1—O).sub.o—R.sup.5, and o represents an integer of 0 to 6, R.sup.5 represents a hydrocarbon group having 1 to 12 carbon atoms, X.sup.1 represents a divalent hydrocarbon group having 2 to 12 carbon atoms, R.sup.2 represents an alkyl group having 1 to 12 carbon atoms or the like, I represents an integer of 0 to 3, and when I is 2 or more, a plurality of R.sup.2 may be the same or different from each other, R.sup.3 and R.sup.4 each represent a hydrogen atom or the like, m and n each represent 1 or 2, X.sup.0 represents a single bond, —CH.sub.2—, —O— or —S—, and R.sup.6 and R.sup.7 each represent an alkyl group having 1 to 4 carbon atoms which has a fluorine atom or the like.

A chemically amplified positive-type photosensitive resin composition including an acid generator which generates acid upon exposure to an irradiated active ray or radiation, a resin whose solubility in alkali increases under the action of acid, and a nitrogen-containing aromatic heterocyclic compound that is a nitrogen-containing aromatic heterocyclic compound having a specific structure and having a Log S value of −6.00 or less.

Disclosed are a salt represented by formula (I), and a method for producing the salt, and a quencher and a resist composition comprising the same: ##STR00001## wherein R.sup.1 and R.sup.2 each represent a hydrocarbon group, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O— or —CO—; R.sup.3, R.sup.4 and R.sup.5 each represent a halogen atom, an alkyl fluoride group or a hydrocarbon group, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O— or —CO—; m3 represents an integer of 0 to 2, and when m3 is 2, two R.sup.3 may be the same or different from each other; and m4 and m5 represent an integer of 0 to 5, and when m4 and/or m5 is/are 2 or more, a plurality of R.sup.4 and/or a plurality of R.sup.5 may be the same or different from each other.

According to one embodiment, a substrate processing device includes a stage configured to mount a substrate, a mold having a first surface facing an upper surface of an outer peripheral edge of the substrate and a second surface facing a side surface of an outer peripheral continuous with the upper surface of the outer peripheral edge, a mold moving mechanism configured to move the mold to bring the first surface close to the upper surface of the outer peripheral edge of the substrate and the second surface close to the side surface of the outer peripheral of the substrate, and a nozzle arranged in the mold, wherein the nozzle ejects resist.