A pellicle membrane for a lithographic apparatus, the membrane including a matrix including a plurality of inclusions distributed therein. A method of manufacturing the pellicle membrane, a lithographic apparatus including the pellicle membrane, a pellicle assembly for use in a lithographic apparatus including the membrane, as well as the use of the pellicle membrane in a lithographic apparatus or method.

A drive device for driving an actuator of an optical system comprises: a switching amplifier for generating an amplified signal depending on a modulation signal; a filter unit connected between the actuator and the switching amplifier and having at least one inductance; a providing unit for providing a supply voltage; and a two-quadrant controller having feedback capability coupled between the providing unit and the switching amplifier.

A storage and drainage mechanism includes a storage vessel, a drainage section, and a temperature controller. The storage vessel stores a stored material containing metal of plasma raw material at a temperature at which the stored material is in a liquid-phase state. The drainage section includes a drain pipe including an inlet through which the stored material flows in, and an outlet through which the stored material drains away, the drain pipe being communicated with an interior of the storage vessel, and a temperature control element that adjusts a temperature of the drain pipe. The temperature controller controls the temperature control element to switch the temperature of the drain pipe in a manner that the stored material in the drain pipe is in either a liquid-phase state or a solid-phase state.

An improved methods and systems for detecting defect(s) on a mask are disclosed. An improved method comprises inspecting an exposed wafer after the wafer was exposed, by a lithography system using a mask, with a selected process condition that is determined based on a mask defect printability under the selected process condition; and identifying, based on the inspection, a wafer defect that is caused by a defect on the mask to enable identification of the defect on the mask.

The invention relates to a method for correcting a telecentricity error of an imaging device for semiconductor lithography having an illumination unit, an imaging optical unit, and a filter for correcting the telecentricity error, having the following method steps: determining the telecentricity error of the imaging device, designing a filter for correcting the telecentricity error, arranging the filter in the pupil plane of the illumination unit, determining the telecentricity error again, and repeating the method steps one to four until the telecentricity error falls below a specified telecentricity error.

The invention furthermore relates to an imaging device for semiconductor lithography, which is configured for carrying out the method.

In a method of inspecting an outer surface of a mask pod, a stream of air is directed at a first location of a plurality of locations on the outer surface. One or more particles are removed by the directed stream of air from the first location on the outer surface. Scattered air from the first location of the outer surface is extracted and a number of particles in the extracted scattered air is determined as a sampled number of particles at the first location. The mask pod is moved and the stream of air is directed at other locations of the plurality of locations to determine the sampled number of particles in extracted scattered air at the other locations. A map of the particles on the outer surface of the mask pod is generated based on the sampled number of particles at the plurality of locations.

A method of forming sub-resolution features that includes: exposing a photoresist layer formed over a substrate to a first ultraviolet light (UV) radiation having a first wavelength of 365 nm or longer through a mask configured to form features at a first critical dimension, the photoresist layer including first portions exposed to the first UV radiation and second portions unexposed to the first UV radiation after exposing with the first UV radiation; exposing the first portions and the second portions to a second UV radiation; and developing the photoresist layer after exposing the photoresist layer to the second UV radiation to form the sub-resolution features having a second critical dimension less than the first critical dimension.

A beam guide guides a laser beam on a device for extreme ultraviolet lithography. The beam guide has a scraper mirror for coupling out laser radiation and a positioning device for positioning the scraper mirror in a positioning plane defined by first and second positioning axes. The positioning device contains first and second positioning units assigned to the first and second positioning axes, respectively. The first positioning unit has a first linear guide and a first positioning drive. By the first positioning drive, the scraper mirror is moved together with the mirror-side guide element of the first linear guide relative to the mirror-remote guide element of the first linear guide along the first positioning axis into a target position. The second positioning unit has a second linear guide and a second positioning drive, the second linear guide has a mirror-side guide element and a mirror-remote guide element.

A method of extracting a feature from a data set includes iteratively extracting a feature from a data set based on a visualization of a residual pattern within the data set, wherein the feature is distinct from a feature extracted in a previous iteration, and the visualization of the residual pattern uses the feature extracted in the previous iteration. Visualizing the data set using the feature extracted in the previous iteration may include showing residual patterns of attribute data that are relevant to target data. Visualizing the data set using the feature extracted in the previous iteration may involve adding cluster constraints to the data set, based on the feature extracted in the previous iteration. Additionally or alternatively, visualizing the data set using the feature extracted in the previous iteration may involve defining conditional probabilities conditioned on the feature extracted in the previous iteration.

A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.